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Class Information
Number: 438/135
Name: Semiconductor device manufacturing: process > Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) > Having field effect structure
Description: Process wherein the regenerative switching device includes or is combined with a field effect structure (i.e., wherein the current through a active channel region is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof).










Sub-classes under this class:

Class Number Class Name Patents
438/136 Junction gate 39
438/138 Vertical channel 303


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8692290 Silicon controlled rectifier structure with improved junction breakdown and leakage control Apr. 8, 2014
8692291 Passive devices for FinFET integrated circuit technologies Apr. 8, 2014
8685800 Single event latch-up prevention techniques for a semiconductor device Apr. 1, 2014
8686467 Semiconductor device comprising semiconductor substrate and having diode region and IGBT region Apr. 1, 2014
8648416 LDMOS sense transistor structure for current sensing at high voltage Feb. 11, 2014
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure Feb. 4, 2014
8618534 Field-effect transistor with a dielectric layer having therein denatured albumen Dec. 31, 2013
8617936 Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device Dec. 31, 2013
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage Nov. 19, 2013
8530284 Method of forming a bi-directional transistor with by-pass path Sep. 10, 2013
8530931 Semiconductor device and method of manufacturing the same Sep. 10, 2013
8530967 Lateral insulated-gate bipolar transistor and manufacturing method thereof Sep. 10, 2013
8524543 Thyristor-based memory cells, devices and systems including the same and methods for forming the same Sep. 3, 2013
8507327 Semiconductor device manufacturing method thereof Aug. 13, 2013
8507986 Silicon-carbide MOSFET cell structure and method for forming same Aug. 13, 2013
8501548 Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants Aug. 6, 2013
8501549 Method of manufacturing a reverse blocking insulated gate bipolar transistor Aug. 6, 2013
8487296 Graphene deposition and graphenated substrates Jul. 16, 2013
8481372 JFET device structures and methods for fabricating the same Jul. 9, 2013
8476085 Method of fabricating dual trench isolated epitaxial diode array Jul. 2, 2013
8460975 Reverse block-type insulated gate bipolar transistor manufacturing method Jun. 11, 2013
8461621 Method and apparatus of forming bipolar transistor device Jun. 11, 2013
8461620 Laser pumping of thyristors for fast high current rise-times Jun. 11, 2013
8460976 Manufacturing method of SOI high-voltage power device Jun. 11, 2013
8450155 Method for introducing channel stress and field effect transistor fabricated by the same May. 28, 2013
8450156 Method for producing a thyristor May. 28, 2013
8441070 Semiconductor device and method of manufacturing semiconductor device May. 14, 2013
8420454 Three-terminal power device with high switching speed and manufacturing process Apr. 16, 2013
8421118 Regenerative building block and diode bridge rectifier and methods Apr. 16, 2013
8421077 Replacement gate MOSFET with self-aligned diffusion contact Apr. 16, 2013
8415712 Lateral insulated gate bipolar transistor (LIGBT) Apr. 9, 2013
8384123 Semiconductor device and method for manufacturing same Feb. 26, 2013
8384125 Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology Feb. 26, 2013
8377755 Method for fabricating SOI high voltage power chip with trenches Feb. 19, 2013
8377756 Silicon-carbide MOSFET cell structure and method for forming same Feb. 19, 2013
8362519 Semiconductor device Jan. 29, 2013
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof Jan. 22, 2013
8354722 SCR/MOS clamp for ESD protection of integrated circuits Jan. 15, 2013
8330185 Semiconductor device having semiconductor substrate including diode region and IGBT region Dec. 11, 2012
8304776 Thin film transistor substrate and method for fabricating the same Nov. 6, 2012
8298876 Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices Oct. 30, 2012
8299496 Semiconductor device having semiconductor substrate including diode region and IGBT region Oct. 30, 2012
8293591 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor Oct. 23, 2012
8278685 Semiconductor device used with high frequency band Oct. 2, 2012
8264037 Semiconductor device and method of manufacturing semiconductor device Sep. 11, 2012
8241986 Semiconductor device and process for reducing damaging breakdown in gate dielectrics Aug. 14, 2012
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
8236642 Fully isolated high-voltage MOS device Aug. 7, 2012
8236624 Method for producing a thyristor Aug. 7, 2012
8198144 Pillar structure for memory device and method Jun. 12, 2012

1 2 3 4 5










 
 
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