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Class Information
Number: 438/103
Name: Semiconductor device manufacturing: process > Having selenium or tellurium elemental semiconductor component > Direct application of electrical current
Description: Process having a step of directly applying electrical current to the selenium or tellurium elemental semiconductor component substrate.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8704203 Transition metal oxide bilayers Apr. 22, 2014
8691622 Memory cells and methods of forming memory cells Apr. 8, 2014
8693209 Wiring board and method for manufacturing the same Apr. 8, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8671560 In system reflow of low temperature eutectic bond balls Mar. 18, 2014
8658999 Semiconductor device Feb. 25, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8642988 Non-volatile memory device Feb. 4, 2014
RE44720 Method of manufacturing a MOSFET structure Jan. 21, 2014
8629421 Memory cells Jan. 14, 2014
8623697 Avoiding degradation of chalcogenide material during definition of multilayer stack structure Jan. 7, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8614117 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Dec. 24, 2013
8609459 Method of manufacturing a nanostructure quick-switch memristor Dec. 17, 2013
8610101 Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes Dec. 17, 2013
8592798 Non-volatile storage device and method for manufacturing the same Nov. 26, 2013
8592250 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Nov. 26, 2013
8586405 Semiconductor device manufacturing method Nov. 19, 2013
8575583 Memory storage device having a variable resistance memory storage element Nov. 5, 2013
8569104 Transition metal oxide bilayers Oct. 29, 2013
8557627 Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same Oct. 15, 2013
8558208 Resistance random access memory including variable-resistance layers Oct. 15, 2013
8541767 Memory component having an electrical contact free of a metal layer Sep. 24, 2013
8541768 Semiconductor device having stacked structural bodies and method for manufacturing the same Sep. 24, 2013
8536557 Light emitting device and light emitting device package Sep. 17, 2013
8536555 Voltage sensitive resistor (VSR) read only memory Sep. 17, 2013
8536015 Memory cell that includes a carbon-based memory element and methods of forming the same Sep. 17, 2013
8528195 Layout method for electronic components of double-sided surface mount circuit board Sep. 10, 2013
8530874 Insulated phase change memory Sep. 10, 2013
8525145 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same Sep. 3, 2013
8513050 Bi-Se doped with Cu, p-type semiconductor Aug. 20, 2013
8513638 Semiconductor device including a phase-change memory element Aug. 20, 2013
8507315 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Aug. 13, 2013
8502188 Electrically actuated device Aug. 6, 2013
8502184 Nonvolatile memory device using variable resistive element Aug. 6, 2013
8501525 Method of fabrication of programmable memory microelectric device Aug. 6, 2013
8492195 Method for forming stackable non-volatile resistive switching memory devices Jul. 23, 2013
8492741 Resistive random access memory device and memory array including the same Jul. 23, 2013
8492743 Nonvolatile memory device and method of manufacturing the same Jul. 23, 2013
8487291 Programmable metallization memory cell with layered solid electrolyte structure Jul. 16, 2013
8487294 Nanostructure quick-switch memristor and method of manufacturing the same Jul. 16, 2013
8481361 Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry Jul. 9, 2013
8481989 Semiconductor resistive random access memory device suitable for bipolar action Jul. 9, 2013
8476613 Reproducible resistance variable insulating memory devices and methods for forming same Jul. 2, 2013
8471235 Nonvolatile memory element having a resistance variable layer and manufacturing method thereof Jun. 25, 2013
8455852 Controlled placement of dopants in memristor active regions Jun. 4, 2013
8450710 Low temperature p+ silicon junction material for a non-volatile memory device May. 28, 2013
8450772 Phase change RAM device and method for manufacturing the same May. 28, 2013
8445885 Nonvolatile memory element having a thin platinum containing electrode May. 21, 2013

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