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Class Information
Number: 438/102
Name: Semiconductor device manufacturing: process > Having selenium or tellurium elemental semiconductor component
Description: Process for making a semiconductor electrical device wherein the semiconductor substrate is comprised of semiconductive selenium or tellurium in elemental form (i.e., not in a compound) or an alloy (i.e., mixture) thereof.


Sub-classes under this class:

Class Number Class Name Patents
438/103 Direct application of electrical current 37


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7612358 Nonvolatile nanochannel memory device using mesoporous material Nov. 3, 2009
7608850 Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same Oct. 27, 2009
7608851 Switch array circuit and system using programmable via structures with phase change materials Oct. 27, 2009
7598113 Phase change memory device and fabricating method therefor Oct. 6, 2009
7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method Sep. 22, 2009
7589342 Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same Sep. 15, 2009
7579210 Planar segmented contact Aug. 25, 2009
7579616 Four-terminal programmable via-containing structure and method of fabricating same Aug. 25, 2009
7572662 Method of fabricating phase change RAM including a fullerene layer Aug. 11, 2009
7573058 Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories Aug. 11, 2009
7569417 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device Aug. 4, 2009
7566895 Phase change memory device and method for fabricating the same Jul. 28, 2009
7563639 Phase-changeable memory device and method of manufacturing the same Jul. 21, 2009
7553692 Phase-change memory device and method of manufacturing the same Jun. 30, 2009
7551473 Programmable resistive memory with diode structure Jun. 23, 2009
7547913 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same Jun. 16, 2009
7547569 Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process Jun. 16, 2009
7547425 Cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds Jun. 16, 2009
7541607 Electrically rewritable non-volatile memory element and method of manufacturing the same Jun. 2, 2009
7534647 Damascene phase change RAM and manufacturing method May. 19, 2009
7534713 High density chalcogenide memory cells May. 19, 2009
7534625 Phase change memory with damascene memory element May. 19, 2009
7525117 Chalcogenide devices and materials having reduced germanium or telluruim content Apr. 28, 2009
7521704 Memory device using multi-layer with a graded resistance change Apr. 21, 2009
7521705 Reproducible resistance variable insulating memory devices having a shaped bottom electrode Apr. 21, 2009
7521282 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device Apr. 21, 2009
7517720 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device Apr. 14, 2009
7514288 Manufacturing methods for thin film fuse phase change ram Apr. 7, 2009
7511297 Phase change memory device and method of fabricating the same Mar. 31, 2009
7511294 Resistive memory element with shortened erase time Mar. 31, 2009
7510929 Method for making memory cell device Mar. 31, 2009
7494841 Solution-based deposition process for metal chalcogenides Feb. 24, 2009
7494849 Methods for fabricating multi-terminal phase change devices Feb. 24, 2009
7491573 Phase change materials for applications that require fast switching and high endurance Feb. 17, 2009
7491574 Reducing oxidation of phase change memory electrodes Feb. 17, 2009
7485891 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change m Feb. 3, 2009
7473576 Method for making a self-converged void and bottom electrode for memory cell Jan. 6, 2009
7459336 Method of forming a chalcogenide material containing device Dec. 2, 2008
7449360 Phase change memory devices and fabrication methods thereof Nov. 11, 2008
7442602 Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other Oct. 28, 2008
7439536 Phase change memory cell with tubular heater and manufacturing method thereof Oct. 21, 2008
7427382 Cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds Sep. 23, 2008
7427531 Phase change memory devices employing cell diodes and methods of fabricating the same Sep. 23, 2008
7378286 Semiconductive metal oxide thin film ferroelectric memory transistor May. 27, 2008
7364937 Vertical elevated pore phase change memory Apr. 29, 2008
7358521 Lateral phase change memory and method therefor Apr. 15, 2008
7354793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element Apr. 8, 2008
7348209 Resistance variable memory device and method of fabrication Mar. 25, 2008
7332370 Method of manufacturing a phase change RAM device utilizing reduced phase change current Feb. 19, 2008
7329561 Fabricating memory components (PCRAMS) including memory cells based on a layer that changes phase state Feb. 12, 2008

1 2 3


 
 
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