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Class Information
Number: 438
Name: Semiconductor device manufacturing: process >
Description: A. This class provides for manufacturing a semiconductor containing a solid-state device by a combination of operations wherein:










Class Number Class Name No. of Patents
438/380

Avalanche diode manufacture (e.g., impatt, trappat, etc.)

130
438/455

Bonding of plural semiconductor substrates

1834
438/456

Having enclosed cavity

455
438/458

Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)

1688
438/459

Thinning of semiconductor substrate

1389
438/457

Warping of semiconductor substrate

187
438/932

Boron nitride semiconductor

19
438/900

Bulk effect device making

113
438/901

Capacitive junction

29
438/902

Capping layer

117
438/903

Catalyst aided deposition

55
438/904

Charge carrier lifetime control

63
438/689

Chemical etching

1227
438/705

Altering etchability of substrate region by compositional or crystalline modification

426
438/694

Combined with coating step

1257
438/696

Coating of sidewall

690
438/700

Formation of groove or trench

1719
438/702

Plural coating steps

817
438/701

Tapered configuration

585
438/697

Planarization by etching and coating

501
438/699

Plural coating steps

446
438/698

Utilizing reflow

142
438/703

Plural coating steps

559
438/695

Simultaneous etching and coating

505
438/690

Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)

673
438/691

Combined mechanical and chemical material removal

965
438/692

Simultaneous (e.g., chemical-mechanical polishing, etc.)

2828
438/693

Utilizing particulate abradant

1085
438/704

Having liquid and vapor etching steps

545
438/745

Liquid phase etching

1597
438/754

Electrically conductive material (e.g., metal, conductive oxide, etc.)

504
438/755

Silicide

75
438/752

Germanium

150
438/748

Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant

157
438/749

Sequential application of etchant

197
438/750

To same side of substrate

303
438/751

Each etch step exposes surface of an adjacent layer

181
438/757

Silicon nitride

269
438/756

Silicon oxide

516
438/753

Silicon

574
438/746

Utilizing electromagnetic or wave energy

110
438/747

With relative movement between substrate and confined pool of etchant

168
438/706

Vapor phase etching (i.e., dry etching)

1949
438/735

Differential etching of semiconductor substrate

331
438/737

Substrate possessing multiple layers

260
438/742

Electrically conductive material (e.g., metal, conductive oxide, etc.)

300
438/738

Selectively etching substrate possessing multiple layers of differing etch characteristics

775
438/739

Lateral etching of intermediate layer (i.e., undercutting)

351
438/740

Utilizing etch stop layer

444
438/741

Pn junction functions as etch stop

19
438/744

Silicon nitride

243
438/743

Silicon oxide or glass

465
438/736

Utilizing multilayered mask

460
438/734

Sequential etching steps on a single layer

658
438/707

Utilizing electromagnetic or wave energy

229
438/710

By creating electric field (e.g., plasma, glow discharge, etc.)

1580
438/718

Compound semiconductor

219
438/720

Electrically conductive material (e.g., metal, conductive oxide, etc.)

932
438/721

Silicide

200
438/713

Forming tapered profile (e.g., tapered etching, etc.)

365
438/726

Having microwave gas energizing

77
438/727

Producing energized gas remotely located from substrate

79
438/728

Using magnet (e.g., electron cyclotron resonance, etc.)

68
438/714

Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)

1253
438/722

Metal oxide

183
438/725

Organic material (e.g., resist, etc.)

1197
438/712

Reactive ion beam etching (i.e., ribe)

730
438/724

Silicon nitride

700
438/723

Silicon oxide or glass

1280
438/719

Silicon

847
438/732

Using magnet (e.g., electron cyclotron resonance, etc.)

114
438/729

Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma

254
438/730

Producing energized gas remotely located from substrate

68
438/731

Using intervening shield structure

58
438/717

Utilizing multilayered mask

612
438/711

Utilizing multiple gas energizing means

292
438/716

With substrate handling (e.g., conveying, etc.)

186
438/715

With substrate heating or cooling

392
438/708

Photo-induced etching

270
438/709

Photo-induced plasma etching

195
438/733

Using or orientation dependent etchant (i.e., anisotropic etchant)

201
438/905

Cleaning of reaction chamber

386
438/906

Cleaning of wafer as interim step

598
438/758

Coating of substrate containing semiconductor region or of semiconductor substrate

1200
438/765

By reaction with substrate

246
438/767

Compound semiconductor substrate

170
438/766

Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

360
438/768

Reaction with conductive region

133
438/769

Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)

373
438/775

Nitridation

468
438/776

Using electromagnetic or wave energy

131
438/777

Microwave gas energizing

77
438/770

Oxidation

749
438/774

In atmosphere containing halogen

128
438/773

In atmosphere containing water vapor (i.e., wet oxidation)

218
438/771

Using electromagnetic or wave energy

180
438/772

Microwave gas energizing

60
438/759

Combined with the removal of material by nonchemical means

278
438/764

Formation of semi-insulative polycrystalline silicon

122
438/778

Insulative material deposited upon semiconductive substrate

1474
438/779

Compound semiconductor substrate

160
438/780

Depositing organic material (e.g., polymer, etc.)

1268
438/781

Subsequent heating modifying organic coating composition

700
438/783

Insulative material having impurity (e.g., for altering physical characteristics, etc.)

466
438/784

Introduction simultaneous with deposition

290
438/785

Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

864
438/791

Silicon nitride formation

558
438/794

Organic reactant

79
438/792

Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

367
438/793

Organic reactant

74
438/787

Silicon oxide formation

968
438/790

Organic reactant

484
438/788

Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

710
438/789

Organic reactant

435
438/786

Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)

436
438/782

With substrate handling during coating (e.g., immersion, spinning, etc.)

591
438/761

Multiple layers

711
438/762

At least one layer formed by reaction with substrate

334
438/763

Layers formed of diverse composition or by diverse coating processes

1114
438/760

Utilizing reflow (e.g., planarization, etc.)

287
438/584

Coating with electrically or thermally conductive material

637
438/585

Insulated gate formation

1277
438/586

Combined with formation of ohmic contact to semiconductor region

1150
438/590

Compound semiconductor

149
438/587

Forming array of gate electrodes

599
438/588

Plural gate levels

299
438/591

Gate insulator structure constructed of plural layers or nonsilicon containing compound

904
438/595

Having sidewall structure

1035
438/596

Portion of sidewall structure is conductive

329
438/592

Possessing plural conductive layers (e.g., polycide)

1428
438/593

Separated by insulator (i.e., floating gate)

729
438/594

Tunnelling dielectric layer

379
438/589

Recessed into semiconductor substrate

728
438/597

To form ohmic contact to semiconductive material

984
438/658

Altering composition of conductor

315
438/659

Implantation of ion into conductor

342
438/688

Aluminum or aluminum alloy conductor

674
438/669

And patterning of conductive layer

854
438/672

Plug formation (i.e., in viahole)

1469
438/673

Tapered etching

225
438/670

Utilizing lift-off

216
438/671

Utilizing multilayered mask

300
438/611

Beam lead formation

219
438/610

Conductive macromolecular conductor (including metal powder filled composition)

112
438/618

Contacting multiple semiconductive regions (i.e., interconnects)

1680
438/619

Air bridge structure

497
438/621

Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)

184
438/642

Diverse conductors

255
438/643

At least one layer forms a diffusion barrier

1193
438/644

Having adhesion promoting layer

328
438/647

Having electrically conductive polysilicon component

287
438/650

Having noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

244
438/651

Silicide

182
438/645

Having planarization step

312
438/646

Utilizing reflow

100
438/648

Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

922
438/649

Silicide

578
438/620

Forming contacts of differing depths into semiconductor substrate

383
438/622

Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)

2346
438/625

At least one metallization level formed of diverse conductive layers

488
438/627

At least one layer forms a diffusion barrier

1177
438/629

Diverse conductive layers limited to viahole/plug

935
438/630

Silicide formation

308
438/628

Having adhesion promoting layer

342
438/626

Planarization

702
438/631

Having planarization step

750
438/633

Simultaneously by chemical and mechanical means

883
438/634

Utilizing etch-stop layer

517
438/632

Utilizing reflow

196
438/623

Including organic insulating material between metal levels

921
438/636

Including use of antireflective layer

447
438/635

Insulator formed by reaction with conductor (e.g., oxidation, etc.)

219
438/641

Selective deposition

215
438/624

Separating insulating layer is laminate or composite of plural insulating materials

1540
438/637

With formation of opening (i.e., viahole) in insulative layer

3201
438/640

Having viahole of tapered shape

553
438/639

Having viahole with sidewall component

813
438/638

Having viaholes of diverse width

1136
438/687

Copper of copper alloy conductor

1750
438/684

Electrically conductive polysilicon

226
438/678

Electroless deposition of conductive layer

614
438/679

Evaporative coating of conductive layer

151
438/612

Forming solder contact or bonding pad

1877
438/613

Bump electrode

1737
438/615

Including fusion of conductor

331
438/616

By transcription from auxiliary substrate

158
438/617

By wire bonding

538
438/614

Plural conductive layers

967
438/660

Including heat treatment of conductive layer

847
438/663

Rapid thermal anneal

304
438/664

Forming silicide

636
438/661

Subsequent fusing conductive layer

151
438/662

Utilizing laser

170
438/686

Noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

455
438/608

Oxidic conductor (e.g., indium tin oxide, etc.)

178
438/609

Transparent conductor

170
438/652

Plural layered electrode or conductor

684
438/653

At least one layer forms a diffusion barrier

1305
438/654

Having adhesion promoting layer

389
438/657

Having electrically conductive polysilicon component

325
438/656

Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

997
438/655

Silicide

1044
438/685

Refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

919
438/674

Selective deposition of conductive layer

492
438/675

Plug formation (i.e., in viahole)

1056
438/677

Pretreatment of surface to enhance or retard deposition

375
438/676

Utilizing electromagnetic or wave energy

181
438/598

Selectively interconnecting (e.g., customization, wafer scale integration, etc.)

417
438/600

Using structure alterable to conductive state (i.e., antifuse)

316
438/601

Using structure alterable to nonconductive state (i.e., fuse)

382
438/599

With electrical circuit layout

252
438/682

Silicide

835
438/683

Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

770
438/666

Specified configuration of electrode or contact

846
438/667

Conductive feedthrough or through-hole in substrate

741
438/668

Specified aspect ratio of conductor or viahole

284
438/602

To compound semiconductor

186
438/603

Ii-vi compound semiconductor

94
438/604

Iii-v compound semiconductor

321
438/606

Ga and as containing semiconductor

193
438/605

Multilayer electrode

171
438/680

Utilizing chemical vapor deposition (i.e., cvd)

1137
438/681

Of organo-metallic precursor (i.e., mocvd)

508
438/665

Utilizing textured surface

198
438/607

With epitaxial conductor formation

189
438/907

Continuous processing

130
438/908

Utilizing cluster apparatus

105
438/909

Controlled atmosphere

209
438/910

Controlling charging state at semiconductor-insulator interface

135
438/911

Differential oxidation and etching

150
438/466

Direct application of electrical current

181
438/468

Electromigration

74
438/470

Fusion of semiconductor region

26
438/467

To alter conductivity of fuse or antifuse element

307
438/469

Utilizing pulsed current

41
438/912

Displacing pn junction

13
438/913

Diverse treatments performed in unitary chamber

106
438/914

Doping

60
438/915

Amphoteric doping

19
438/916

Autodoping control or utilization

37
438/919

Compensation doping

91
438/920

Controlling diffusion profile by oxidation

58
438/917

Deep level dopants (e.g., gold (au), chromium (cr), iron (fe), nickel (ni), etc.)

28
438/922

Diffusion along grain boundaries

18
438/923

Diffusion through a layer

82
438/925

Fluid growth doping control (e.g., delta doping, etc.)

111
438/921

Nonselective diffusion

5
438/918

Special or nonstandard dopant

76
438/924

To facilitate selective etching

101
438/926

Dummy metallization

193
438/927

Electromigration resistant metallization

95
438/20

Electron emitter manufacture

433
438/929

Eutectic semiconductor

22
438/400

Formation of electrically isolated lateral semiconductive structure

296
438/402

And gettering of substrate

94
438/454

Field plate electrode

136
438/424

Grooved and refilled with deposited dielectric material

1945
438/430

And deposition of polysilicon or noninsulative material into groove

450
438/431

Oxidation of deposited material

214
438/432

Nonoxidized portions remaining in groove after oxidation

125
438/429

And epitaxial semiconductor formation in groove

192
438/425

Combined with formation of recessed oxide by localized oxidation

360
438/426

Recessed oxide laterally extending from groove

298
438/433

Dopant addition

309
438/434

From doped insulator in groove

70
438/435

Multiple insulative layers in groove

688
438/437

Conformal insulator formation

432
438/436

Reflow of insulator

109
438/427

Refilling multiple grooves of different widths or depths

612
438/428

Reflow of insulator

66
438/438

Reflow of insulator

117
438/421

Having air-gap dielectric (e.g., groove, etc.)

360
438/422

Enclosed cavity

248
438/403

Having semi-insulating component

116
438/401

Having substrate registration feature (e.g., alignment mark)

770
438/423

Implanting to form insulator

215
438/414

Isolation by pn junction only

62
438/420

Plural doping steps

83
438/415

Thermomigration

30
438/416

With epitaxial semiconductor formation

80
438/417

And simultaneous polycrystalline growth

23
438/418

Dopant addition

48
438/419

Plural doping steps

94
438/439

Recessed oxide by localized oxidation (i.e., locos)

352
438/453

And electrical conductor formation (i.e., metallization)

197
438/449

Dopant addition

148
438/450

Implanting through recessed oxide

125
438/451

Plural doping steps

142
438/443

Etchback of recessed oxide

227
438/440

Including nondopant implantation

106
438/452

Plural oxidation steps to form recessed oxide

129
438/444

Preliminary etching of groove

168
438/445

Masking of groove sidewall

168
438/447

Dopant addition

73
438/446

Polysilicon containing sidewall

60
438/448

Utilizing oxidation mask having polysilicon component

159
438/441

With electrolytic treatment step

27
438/442

With epitaxial semiconductor layer formation

144
438/404

Total dielectric isolation

349
438/411

Air isolation (e.g., beam lead supported semiconductor islands, etc.)

174
438/412

Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

190
438/405

And separate partially isolated semiconductor regions

178
438/406

Bonding of plural semiconductive substrates

481
438/410

Encroachment of separate locally oxidized regions

73
438/407

Nondopant implantation

244
438/408

With electrolytic treatment step

46
438/409

Porous semiconductor formation

168
438/413

With epitaxial semiconductor formation

200
438/478

Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition)

923
438/482

Amorphous semiconductor

483
438/486

And subsequent crystallization

782
438/487

Utilizing wave energy (e.g., laser, electron beam, etc.)

819
438/483

Compound semiconductor

339
438/485

Deposition utilizing plasma (e.g., glow discharge, etc.)

360
438/484

Running length (e.g., sheet, strip, etc.)

85
438/503

Fluid growth from gaseous state combined with preceding diverse operation

231
438/504

Differential etching

116
438/505

Doping of semiconductor

92
438/506

Ion implantation

105
438/507

Fluid growth from gaseous state combined with subsequent diverse operation

270
438/508

Doping of semiconductor

138
438/509

Heat treatment

231
438/497

Fluid growth from liquid combined with preceding diverse operation

79
438/498

Differential etching

36
438/499

Doping of semiconductor

41
438/500

Fluid growth from liquid combined with subsequent diverse operation

80
438/501

Doping of semiconductor

47
438/502

Heat treatment

115
438/492

Fluid growth step with preceding and subsequent diverse operation

232
438/479

On insulating substrate or layer

1029
438/480

Including implantation of ion which reacts with semiconductor substrate to form insulating layer

163
438/481

Utilizing epitaxial lateral overgrowth

510
438/493

Plural fluid growth steps with intervening diverse operation

100
438/496

Coating of semiconductive substrate with nonsemiconductive material

70
438/494

Differential etching

135
438/495

Doping of semiconductor

63
438/488

Polycrystalline semiconductor

585
438/491

And subsequent doping of polycrystalline semiconductor

114
438/490

Running length (e.g., sheet, strip, etc.)

73
438/489

Simultaneous single crystal formation

178
438/309

Forming bipolar transistor by formation or alteration of semiconductive active regions

498
438/322

Complementary bipolar transistors

160
438/323

Having common active region (i.e., integrated injection logic (i2l), etc.)

43
438/325

Having lateral bipolar transistor

81
438/324

Including additional electrical device

44
438/327

Having lateral bipolar transistor

58
438/326

Including additional electrical device

42
438/351

Direct application of electrical current

12
438/346

Emitter dip prevention or utilization

9
438/350

Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)

186
438/334

Forming inverted transistor structure

39
438/335

Forming lateral transistor structure

94
438/337

Active region formed along groove or exposed edge in semiconductor

60
438/336

Combined with vertical bipolar transistor

62
438/338

Having multiple emitter or collector structure

40
438/339

Self-aligned

88
438/352

Fusion or solidification of semiconductor region

9
438/310

Gettering of semiconductor substrate

70
438/333

Having fuse or integral short

95
438/312

Having heterojunction

362
438/314

And additional electrical device

83
438/313

Complementary bipolar transistors

107
438/315

Forming inverted transistor structure

54
438/316

Forming lateral transistor structure

67
438/318

Including isolation structure

128
438/319

Air isolation (e.g., mesa, etc.)

92
438/320

Self-aligned

158
438/321

Utilizing dummy emitter

51
438/317

Wide bandgap emitter

89
438/342

Having multiple emitter or collector structure

82
438/328

Including diode

210
438/353

Including isolation structure

131
438/359

Dielectric isolation formed by grooving and refilling with dielectrical material

212
438/361

Including deposition of polysilicon or noninsulative material into groove

132
438/360

With epitaxial semiconductor formation in groove

76
438/354

Having semi-insulative region

25
438/356

Isolation by pn junction only

43
438/357

Including epitaxial semiconductor layer formation

134
438/358

Up diffusion of dopant from substrate into epitaxial layer

97
438/362

Recessed oxide by localized oxidation (i.e., locos)

135
438/363

With epitaxial semiconductor layer formation

146
438/355

Total dielectrical isolation

101
438/329

Including passive device (e.g., resistor, capacitor, etc.)

170
438/330

Resistor

107
438/331

Having same doping as emitter or collector

42
438/332

Lightly doped junction isolated resistor

39
438/340

Making plural bipolar transistors of differing electrical characteristics

112
438/343

Mesa or stacked emitter

118
438/311

On insulating substrate or layer (i.e., soi type)

412
438/349

Pedestal base

47
438/347

Permeable or metal base

36
438/378

Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

127
438/364

Self-aligned

112
438/369

Dopant implantation or diffusion

193
438/370

Forming buried region (e.g., implanting through insulating layer, etc.)

214
438/371

Simultaneous introduction of plural dopants

51
438/372

Plural doping steps

105
438/375

Forming partially overlapping regions

79
438/373

Multiple ion implantation steps

147
438/374

Using same conductivity-type dopant

86
438/376

Single dopant forming regions of different depth or concentrations

80
438/377

Through same mask opening

70
438/365

Forming active region from adjacent doped polycrystalline or amorphous semiconductor

253
438/366

Having sidewall

197
438/367

Including conductive component

71
438/368

Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

111
438/348

Sidewall base contact

92
438/341

Using epitaxial lateral overgrowth

143
438/345

Walled emitter

75
438/344

Washed emitter

13
438/570

Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact)

260
438/571

Combined with formation of ohmic contact to semiconductor region

438
438/572

Compound semiconductor

148
438/576

Into grooved or recessed semiconductor region

122
438/578

Forming electrode of specified shape (e.g., slanted, etc.)

64
438/579

T-shaped electrode

110
438/577

Utilizing lift-off

68
438/573

Multilayer electrode

111
438/574

T-shaped electrode

121
438/575

Using platinum group metal (i.e., platinum (pt), palladium (pd), rodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

51
438/580

Using platinum group metal (i.e., platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

60
438/581

Silicide

156
438/582

Using refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

127
438/583

Silicide

174
438/978

Forming tapered edges on substrate or adjacent layers

278
438/928

Front and rear surface processing

302
438/935

Gas flow control

186
438/933

Germanium or silicon or ge-si on iii-v

306
438/471

Gettering of substrate

312
438/473

By implanting or irradiating

267
438/474

Ionized radiation (e.g., corpuscular or plasma treatment, etc.)

163
438/475

Hydrogen plasma (i.e., hydrogenization)

170
438/476

By layers which are coated, contacted, or diffused

306
438/477

By vapor phase surface reaction

112
438/472

By vibrating or impacting

45
438/936

Graded energy gap

88
438/1

Having biomaterial component or integrated with living organism

115
438/105

Having diamond semiconductor component

260
438/19

Having integral power source (e.g., battery, etc.)

78
438/3

Having magnetic or ferroelectric component

2186
438/104

Having metal oxide or copper sulfide compound semiconductor component

453
438/99

Having organic semiconductive component

1380
438/102

Having selenium or tellurium elemental semiconductor component

467
438/103

Direct application of electrical current

163
438/2

Having superconductive component

123
438/937

Hillock prevention

43
438/5

Including control responsive to sensed condition

581
438/10

Electrical characteristic sensed

369
438/13

Altering electrical property by material removal

95
438/12

And removal of defect

140
438/11

Utilizing integral test element

222
438/6

Interconnecting plural devices on semiconductor substrate

194
438/7

Optical characteristic sensed

507
438/8

Chemical etching

300
438/9

Plasma etching

383
438/510

Introduction of conductivity modifying dopant into semiconductive material

379
438/535

By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)

215
438/536

Recoil implantation

13
438/542

Diffusing a dopant

243
438/556

Edge diffusion by using edge portion of structure other than masking layer to mask

40
438/545

Forming partially overlapping regions

102
438/557

From melt

35
438/558

From solid dopant source in contact with semiconductor region

261
438/561

Dopant source within trench or groove

114
438/563

Glassy source or doped oxide

192
438/562

Organic source

22
438/560

Plural diffusion stages

65
438/564

Polycrystalline semiconductor source

226
438/559

Using capping layer over dopant source to prevent out-diffusion of dopant

86
438/565

From vapor phase

99
438/569

Into compound semiconductor region

58
438/566

Plural diffusion stages

39
438/567

Solid source in operative relation with semiconductor region

61
438/568

In capsule-type enclosure

31
438/555

Laterally under mask opening

81
438/550

Nonuniform heating

30
438/554

Outwardly

55
438/546

Plural dopants in same region (e.g., through same mask opening, etc.)

160
438/547

Simultaneously

62
438/548

Plural dopants simultaneously in plural regions

92
438/549

Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)

177
438/543

To control carrier lifetime (i.e., deep level dopant)

57
438/544

To solid-state solubility concentration

16
438/553

Using metal mask

23
438/551

Using multiple layered mask

104
438/552

Having plural predetermined openings in master mask

69
438/537

Fusing dopant with substrate (i.e., alloy junction)

39
438/539

Application of pressure to material during fusion

7
438/540

Including plural controlled heating or cooling steps or nonuniform heating

113
438/541

Including diffusion after fusing step

24
438/538

Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)

20
438/512

Involving nuclear transmutation doping

37
438/514

Ion implantation of dopant into semiconductor region

756
438/533

And contact formation (i.e., metallization)

248
438/534

Rectifying contact (i.e., schottky contact)

60
438/526

Forming buried region

404
438/516

Including charge neutralization

74
438/530

Including heat treatment

509
438/527

Including multiple implantation steps

541
438/528

Providing nondopant ion (e.g., proton, etc.)

477
438/529

Using same conductivity-type dopant

242
438/524

Into grooved semiconductor substrate region

271
438/532

Into polycrystalline region

243
438/515

Ionized molecules

128
438/518

Of compound semiconductor

114
438/523

And contact formation (i.e., metallization)

89
438/522

Including heat treatment

268
438/519

Including multiple implantation steps

151
438/520

Providing nondopant ion (e.g., proton, etc.)

149
438/521

Using same conductivity-type dopant

45
438/517

Of semiconductor layer on insulating substrate or layer

306
438/525

Using oblique beam

360
438/531

Using shadow mask

108
438/511

Ordering or disordering

37
438/513

Plasma (e.g., glow discharge, etc.)

320
438/961

Ion beam source and generation

44
438/939

Langmuir-blodgett film utilization

16
438/940

Laser ablative material removal

211
438/938

Lattice strain control or utilization

208
438/941

Loading effect mitigation

19
438/141

Making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.)

109
438/128

Making device array and selectively interconnecting

702
438/130

Rendering selected devices operable or inoperable

193
438/131

Using structure alterable to conductive state (i.e., antifuse)

323
438/132

Using structure alterable to nonconductive state (i.e., fuse)

467
438/129

With electrical circuit layout

450
438/22

Making device or circuit emissive of nonelectrical signal

1793
438/46

Compound semiconductor

1216
438/47

Heterojunction

908
438/45

Dopant introduction into semiconductor region

332
438/37

Graded composition

179
438/42

Groove formation

368
438/43

Tapered etching

230
438/44

With epitaxial deposition of semiconductor in groove

298
438/23

Having diverse electrical device

173
438/24

Including device responsive to nonelectrical signal

393
438/25

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

468
438/29

Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)

1679
438/30

Liquid crystal component

1311
438/32

Optical grating structure

346
438/31

Optical waveguide structure

690
438/34

Making emissive array

600
438/35

Multiple wavelength emissive

214
438/39

Mesa formation

426
438/40

Tapered etching

274
438/41

With epitaxial deposition of semiconductor adjacent mesa

303
438/36

Ordered or disordered

116
438/26

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

915
438/27

Having additional optical element (e.g., optical fiber, etc.)

540
438/28

Plural emissive devices

449
438/38

Passivating of surface

206
438/33

Substrate dicing

513
438/48

Making device or circuit responsive to nonelectrical signal

1532
438/49

Chemically responsive

257
438/50

Physical stress responsive

742
438/52

Having cantilever element

806
438/53

Having diaphragm element

704
438/51

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

584
438/56

Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)

70
438/57

Responsive to electromagnetic radiation

1136
438/96

Amorphous semiconductor

603
438/91

Avalanche diode

102
438/93

Compound semiconductor

306
438/95

Chalcogen (i.e., oxygen (o), sulfur (s), selenium (se), tellurium (te)) containing

722
438/94

Heterojunction

387
438/98

Contact formation (i.e., metallization)

771
438/61

Continuous processing

84
438/62

Using running length substrate

152
438/88

Direct application of electric current

64
438/83

Forming point contact

50
438/89

Fusion or solidification of semiconductor region

90
438/58

Gettering of substrate

117
438/87

Graded composition

128
438/59

Having diverse electrical device

366
438/60

Charge transfer device (e.g., ccd, etc.)

376
438/85

Having metal oxide or copper sulfide compound semiconductive component

189
438/86

And cadmium sulfide compound semiconductive component

68
438/82

Having organic semiconductor component

436
438/84

Having selenium or tellurium elemental semiconductor component

89
438/69

Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)

644
438/70

Color filter

447
438/72

Having reflective or antireflective component

485
438/71

Specific surface topography (e.g., textured surface, etc.)

249
438/90

Including storage of electrical charge in substrate

34
438/73

Making electromagnetic responsive array

586
438/75

Charge transfer device (e.g., ccd, etc.)

348
438/77

Compound semiconductor

56
438/78

Having structure to improve output signal (e.g., exposure control structure, etc.)

86
438/79

Having blooming suppression structure (e.g., antiblooming drain, etc.)

74
438/76

Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

54
438/80

Lateral series connected array

261
438/81

Specified shape junction barrier (e.g., v-grooved junction, etc.)

62
438/74

Vertically arranged (e.g., tandem, stacked, etc.)

192
438/64

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

650
438/65

Having additional optical element (e.g., optical fiber, etc.)

389
438/66

Plural responsive devices (e.g., array, etc.)

381
438/67

Assembly of plural semiconductor substrates

316
438/63

Particulate semiconductor component

166
438/97

Polycrystalline semiconductor

399
438/92

Schottky barrier junction

157
438/68

Substrate dicing

311
438/54

Thermally responsive

276
438/55

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

268
438/142

Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions

406
438/144

Charge transfer device (e.g., ccd, etc.)

194
438/147

Changing width or direction of channel (e.g., meandering channel, etc.)

41
438/145

Having additional electrical device

60
438/146

Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

63
438/148

Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)

43
438/143

Gettering of semiconductor substrate

157
438/197

Having insulated gate (e.g., igfet, misfet, mosfet, etc.)

2098
438/286

Asymmetric

773
438/282

Buried channel

214
438/284

Closed or loop gate

180
438/199

Complementary insulated gate field effect transistors (i.e., cmos)

1738
438/200

And additional electrical device

493
438/209

Including additional vertical channel insulated gate field effect transistor

106
438/202

Including bipolar transistor (i.e., bicmos)

396
438/203

Complementary bipolar transistors

145
438/207

Including isolation structure

319
438/208

Isolation by pn junction only

73
438/204

Lateral bipolar transistor

105
438/205

Plural bipolar transistors of differing electrical characteristics

70
438/206

Vertical channel insulated gate field effect transistor

173
438/201

Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)

643
438/210

Including passive device (e.g., resistor, capacitor, etc.)

453
438/233

And contact formation

418
438/213

Common active region

80
438/217

Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)

536
438/216

Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound

611
438/215

Having fuse or integral short

150
438/211

Having gate surrounded by dielectric (i.e., floating gate)

522
438/214

Having underpass or crossunder

37
438/218

Including isolation structure

314
438/221

Dielectric isolation formed by grooving and refilling with dielectric material

478
438/223

Having well structure of opposite conductivity type

180
438/224

Plural wells

244
438/222

With epitaxial semiconductor layer formation

204
438/220

Isolation by pn junction only

112
438/225

Recessed oxide formed by localized oxidation (i.e., locos)

191
438/227

Having well structure of opposite conductivity type

262
438/228

Plural wells

336
438/226

With epitaxial semiconductor layer formation

122
438/219

Total dielectric isolation

117
438/229

Self-aligned

254
438/232

Plural doping steps

384
438/230

Utilizing gate sidewall structure

383
438/231

Plural doping steps

664
438/212

Vertical channel

379
438/292

Direct application of electrical current

49
438/289

Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)

706
438/290

After formation of source or drain regions and gate electrode

211
438/291

Using channel conductivity dopant of opposite type as that of source and drain

400
438/293

Fusion or solidification of semiconductor region

33
438/287

Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound

1153
438/257

Having additional gate electrode surrounded by dielectric (i.e., floating gate)

2850
438/266

Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)

723
438/267

Including forming gate electrode as conductive sidewall spacer to another electrode

397
438/258

Including additional field effect transistor (e.g., sense or access transistor, etc.)

1119
438/262

Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)

339
438/263

Tunneling insulator

316
438/259

Including forming gate electrode in trench or recess in substrate

1005
438/261

Multiple interelectrode dielectrics or nonsilicon compound gate insulator

809
438/265

Oxidizing sidewall of gate electrode

307
438/260

Textured surface of gate insulator or gate electrode

227
438/264

Tunneling insulator

993
438/281

Having fuse or integral short

253
438/288

Having step of storing electrical charge in gate dielectric

242
438/280

Having underpass or crossunder

68
438/234

Including bipolar transistor (i.e., bimos)

387
438/235

Heterojunction bipolar transistor

154
438/236

Lateral bipolar transistor

81
438/237

Including diode

369
438/294

Including isolation structure

471
438/296

Dielectric isolation formed by grooving and refilling with dielectric material

962
438/297

Recessed oxide formed by localized oxidation (i.e., locos)

515
438/298

Doping region beneath recessed oxide (e.g., to form chanstop, etc.)

310
438/295

Total dielectric isolation

152
438/238

Including passive device (e.g., resistor, capacitor, etc.)

1519
438/239

Capacitor

1281
438/241

And additional field effect transistor (e.g., sense or access transistor, etc.)

688
438/242

Including transistor formed on trench sidewalls

286
438/240

Having high dielectric constant insulator (e.g., ta2o5, etc.)

1446
438/250

Planar capacitor

511
438/251

Including doping of semiconductive region

146
438/252

Multiple doping steps

100
438/253

Stacked capacitor

2571
438/256

Contacts formed by selective growth or deposition

308
438/254

Including selectively removing material to undercut and expose storage node layer

702
438/255

Including texturizing storage node layer

713
438/243

Trench capacitor

1013
438/246

Including doping of trench surfaces

233
438/249

Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)

154
438/248

Including isolation means formed in trench

263
438/247

Multiple doping steps

87
438/244

Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

545
438/245

With epitaxial layer formed over the trench

135
438/279

Making plural insulated gate field effect transistors having common active region

506
438/275

Making plural insulated gate field effect transistors of differing electrical characteristics

1295
438/276

Introducing a dopant into the channel region of selected transistors

376
438/278

After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)

289
438/277

Including forming overlapping gate electrodes

57
438/283

Plural gate electrodes (e.g., dual gate, etc.)

654
438/308

Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

474
438/299

Self-aligned

696
438/300

Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)

943
438/301

Source or drain doping

1281
438/302

Oblique implantation

547
438/306

Plural doping steps

619
438/307

Using same conductivity-type dopant

437
438/303

Utilizing gate sidewall structure

1475
438/304

Conductive sidewall component

281
438/305

Plural doping steps

1731
438/198

Specified crystallographic orientation

210
438/285

Utilizing compound semiconductor

436
438/268

Vertical channel

1038
438/270

Gate electrode in trench or recess in semiconductor substrate

1638
438/272

Totally embedded in semiconductive layers

223
438/271

V-gate

182
438/273

Having integral short of source and base regions

162
438/274

Short formed in recess in substrate

71
438/269

Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer

209
438/186

Having junction gate (e.g., jfet, sit, etc.)

151
438/189

And bipolar transistor

77
438/190

And passive device (e.g., resistor, capacitor, etc.)

77
438/188

Complementary junction gate field effect transistors

79
438/194

Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

109
438/191

Having heterojunction

83
438/196

Including isolation structure

113
438/195

Plural gate electrodes

157
438/187

Specified crystallographic orientation

46
438/192

Vertical channel

129
438/193

Multiple parallel current paths (e.g., grid gate, etc.)

91
438/167

Having schottky gate (e.g., mesfet, hemt, etc.)

345
438/170

And bipolar device

56
438/171

And passive electrical device (e.g., resistor, capacitor, etc.)

104
438/179

Asymmetric

86
438/175

Buried channel

49
438/177

Closed or loop gate

15
438/169

Complementary schottky gate field effect transistors

54
438/174

Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

149
438/178

Elemental semiconductor

25
438/172

Having heterojunction (e.g., hemt, modfet, etc.)

413
438/176

Plural gate electrodes (e.g., dual gate, etc.)

152
438/180

Self-aligned

95
438/181

Doping of semiconductive region

132
438/183

Dummy gate

242
438/182

T-gate

148
438/184

Utilizing gate sidewall structure

146
438/185

Multiple doping steps

57
438/168

Specified crystallographic orientation

37
438/173

Vertical channel

97
438/149

On insulating substrate or layer (e.g., tft, etc.)

2595
438/151

Having insulated gate

1849
438/163

Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)

444
438/155

And additional electrical device on insulating substrate or layer

521
438/152

Combined with electrical device not on insulating substrate or layer

360
438/153

Complementary field effect transistors

375
438/154

Complementary field effect transistors

564
438/166

Including recrystallization step

1314
438/161

Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)

236
438/162

Introduction of nondopant into semiconductor layer

356
438/158

Inverted transistor structure

898
438/159

Source-to-gate or drain-to-gate overlap

202
438/160

Utilizing backside irradiation

183
438/157

Plural gate electrodes (e.g., dual gate, etc.)

592
438/164

Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)

762
438/165

Including differential oxidation

115
438/156

Vertical channel

306
438/150

Specified crystallographic orientation

311
438/957

Making metal-insulator-metal device

120
438/956

Making multiple wavelength emissive device

28
438/954

Making oxide-nitride-oxide device

181
438/381

Making passive device (e.g., resistor, capacitor, etc.)

1003
438/393

Planar capacitor

659
438/394

Including doping of semiconductive region

111
438/395

Multiple doping steps

87
438/382

Resistor

481
438/384

Deposited thin film resistor

388
438/385

Altering resistivity of conductor

301
438/383

Lightly doped junction isolated resistor

91
438/396

Stacked capacitor

2645
438/399

Having contacts formed by selective growth or deposition

353
438/397

Including selectively removing material to undercut and expose storage node layer

620
438/398

Including texturizing storage node layer

777
438/386

Trench capacitor

932
438/387

Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

433
438/389

Including doping of trench surfaces

160
438/392

Doping by outdiffusion from a dopant source layer (e.g., doped oxide)

113
438/391

Including isolation means formed in trench

165
438/390

Multiple doping steps

67
438/388

With epitaxial layer formed over the trench

88
438/100

Making point contact device

41
438/101

Direct application of electrical current

15
438/953

Making radiation resistant device

75
438/133

Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.)

270
438/139

Altering electrical characteristic

90
438/134

Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)

67
438/135

Having field effect structure

184
438/136

Junction gate

33
438/137

Vertical channel

114
438/138

Vertical channel

283
438/140

Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)

195
438/21

Manufacture of electrical device controlled printhead

357
438/942

Masking

288
438/943

Movable

30
438/948

Radiation resist

168
438/949

Energy beam treating radiation resist on semiconductor

181
438/951

Lift-off

193
438/950

Multilayer mask including nonradiation sensitive layer

164
438/952

Utilizing antireflective layer

217
438/944

Shadow

102
438/945

Special (e.g., metal, etc.)

238
438/946

Step and repeat

44
438/947

Subphotolithographic processing

348
438/959

Mechanical polishing of wafer

175
438/955

Melt-back

27
 

Methods (156/1)

 
438/800

Miscellaneous

361
438/106

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

2963
438/107

Assembly of plural semiconductive substrates each possessing electrical device

1685
438/108

Flip-chip-type assembly

2237
438/109

Stacked array (e.g., rectifier, etc.)

1532
438/127

Encapsulating

1920
438/116

Having light transmissive window

306
438/118

Including adhesive bonding step

1971
438/119

Electrically conductive adhesive

510
438/115

Including contaminant removal or mitigation

200
438/117

Incorporating resilient component (e.g., spring, etc.)

285
438/125

Insulative housing or support

1200
438/126

And encapsulating

1128
438/110

Making plural separate devices

816
438/113

Substrate dicing

1509
438/114

Utilizing a coating to perfect the dicing

465
438/111

Using strip lead frame

558
438/112

And encapsulating

869
438/121

Metallic housing or support

754
438/124

And encapsulating

1231
438/123

Lead frame

1831
438/122

Possessing thermal dissipation structure (i.e., heat sink)

1101
438/120

With vibration step

89
438/958

Passivation layer

246
438/960

Porous semiconductor

168
438/962

Quantum dots and lines

249
438/795

Radiation or energy treatment modifying properties of semiconductor region of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

1201
438/799

By differential heating

289
438/796

Compound semiconductor

251
438/797

Ordering or disordering

60
438/798

Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)

472
438/963

Removing process residues from vertical substrate surfaces

126
438/4

Repair or restoration

388
438/964

Roughened surface

287
438/966

Selective oxidation of ion-amorphousized layer

36
438/967

Semiconductor on specified insulator

101
438/460

Semiconductor substrate dicing

1173
438/461

Beam lead formation

136
438/463

By electromagnetic irradiation (e.g., electron, laser, etc.)

406
438/465

Having a perfecting coating

307
438/462

Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)

1232
438/464

With attachment to temporary support or carrier

888
438/968

Semiconductor-metal-semiconductor

7
438/965

Shaped junction formation

108
438/934

Sheet resistance (i.e., dopant parameters)

59
438/931

Silicon carbide semiconductor

376
438/969

Simultaneous formation of monocrystalline and polycrystalline regions

78
438/970

Specified etch stop material

200
438/971

Stoichiometric control of host substrate composition

46
438/972

Stored charge erasure

24
438/975

Substrate or mask aligning feature

428
438/973

Substrate orientation

104
438/974

Substrate surface preparation

313
438/976

Temporary protective layer

160
438/930

Ternary or quaternary semiconductor comprised of elements from three different groups (e.g., i-iii-v, etc.)

75
438/977

Thinning or removal of substrate

602
438/979

Tunnel diodes

62
438/980

Utilizing process equivalents or options

73
438/981

Utilizing varying dielectric thickness

416
438/982

Varying orientation of devices in array

31
438/379

Voltage variable capacitance device manufacture (e.g., varactor, etc.)

120
438/14

With measuring or testing

2431
438/17

Electrical characteristic sensed

1307
438/18

Utilizing integral test element

820
438/16

Optical characteristic sensed

1205
438/15

Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

1040
438/983

Zener diodes

78
 
 
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