| Class Number |
Class Name |
No. of Patents |
| 438/380 |
Avalanche diode manufacture (e.g., impatt, trappat, etc.) |
100 |
| 438/455 |
Bonding of plural semiconductor substrates |
1190 |
| 438/456 |
Having enclosed cavity |
319 |
| 438/458 |
Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.) |
946 |
| 438/459 |
Thinning of semiconductor substrate |
967 |
| 438/457 |
Warping of semiconductor substrate |
122 |
| 438/932 |
Boron nitride semiconductor |
19 |
| 438/900 |
Bulk effect device making |
62 |
| 438/901 |
Capacitive junction |
28 |
| 438/902 |
Capping layer |
107 |
| 438/903 |
Catalyst aided deposition |
49 |
| 438/904 |
Charge carrier lifetime control |
63 |
| 438/689 |
Chemical etching |
784 |
| 438/705 |
Altering etchability of substrate region by compositional or crystalline modification |
366 |
| 438/694 |
Combined with coating step |
967 |
| 438/696 |
Coating of sidewall |
541 |
| 438/700 |
Formation of groove or trench |
1270 |
| 438/702 |
Plural coating steps |
671 |
| 438/701 |
Tapered configuration |
507 |
| 438/697 |
Planarization by etching and coating |
445 |
| 438/699 |
Plural coating steps |
407 |
| 438/698 |
Utilizing reflow |
114 |
| 438/703 |
Plural coating steps |
412 |
| 438/695 |
Simultaneous etching and coating |
430 |
| 438/690 |
Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) |
526 |
| 438/691 |
Combined mechanical and chemical material removal |
790 |
| 438/692 |
Simultaneous (e.g., chemical-mechanical polishing, etc.) |
2384 |
| 438/693 |
Utilizing particulate abradant |
926 |
| 438/704 |
Having liquid and vapor etching steps |
452 |
| 438/745 |
Liquid phase etching |
1268 |
| 438/754 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
414 |
| 438/755 |
Silicide |
61 |
| 438/752 |
Germanium |
119 |
| 438/748 |
Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant |
136 |
| 438/749 |
Sequential application of etchant |
162 |
| 438/750 |
To same side of substrate |
269 |
| 438/751 |
Each etch step exposes surface of an adjacent layer |
158 |
| 438/757 |
Silicon nitride |
232 |
| 438/756 |
Silicon oxide |
452 |
| 438/753 |
Silicon |
465 |
| 438/746 |
Utilizing electromagnetic or wave energy |
92 |
| 438/747 |
With relative movement between substrate and confined pool of etchant |
154 |
| 438/706 |
Vapor phase etching (i.e., dry etching) |
1483 |
| 438/735 |
Differential etching of semiconductor substrate |
256 |
| 438/737 |
Substrate possessing multiple layers |
200 |
| 438/742 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
268 |
| 438/738 |
Selectively etching substrate possessing multiple layers of differing etch characteristics |
656 |
| 438/739 |
Lateral etching of intermediate layer (i.e., undercutting) |
297 |
| 438/740 |
Utilizing etch stop layer |
379 |
| 438/741 |
Pn junction functions as etch stop |
15 |
| 438/744 |
Silicon nitride |
216 |
| 438/743 |
Silicon oxide or glass |
434 |
| 438/736 |
Utilizing multilayered mask |
304 |
| 438/734 |
Sequential etching steps on a single layer |
558 |
| 438/707 |
Utilizing electromagnetic or wave energy |
177 |
| 438/710 |
By creating electric field (e.g., plasma, glow discharge, etc.) |
1267 |
| 438/718 |
Compound semiconductor |
185 |
| 438/720 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
860 |
| 438/721 |
Silicide |
185 |
| 438/713 |
Forming tapered profile (e.g., tapered etching, etc.) |
327 |
| 438/726 |
Having microwave gas energizing |
68 |
| 438/727 |
Producing energized gas remotely located from substrate |
70 |
| 438/728 |
Using magnet (e.g., electron cyclotron resonance, etc.) |
60 |
| 438/714 |
Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.) |
1049 |
| 438/722 |
Metal oxide |
150 |
| 438/725 |
Organic material (e.g., resist, etc.) |
994 |
| 438/712 |
Reactive ion beam etching (i.e., ribe) |
624 |
| 438/724 |
Silicon nitride |
643 |
| 438/723 |
Silicon oxide or glass |
1141 |
| 438/719 |
Silicon |
735 |
| 438/732 |
Using magnet (e.g., electron cyclotron resonance, etc.) |
104 |
| 438/729 |
Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma |
228 |
| 438/730 |
Producing energized gas remotely located from substrate |
58 |
| 438/731 |
Using intervening shield structure |
45 |
| 438/717 |
Utilizing multilayered mask |
412 |
| 438/711 |
Utilizing multiple gas energizing means |
255 |
| 438/716 |
With substrate handling (e.g., conveying, etc.) |
159 |
| 438/715 |
With substrate heating or cooling |
335 |
| 438/708 |
Photo-induced etching |
230 |
| 438/709 |
Photo-induced plasma etching |
162 |
| 438/733 |
Using or orientation dependent etchant (i.e., anisotropic etchant) |
162 |
| 438/905 |
Cleaning of reaction chamber |
325 |
| 438/906 |
Cleaning of wafer as interim step |
524 |
| 438/758 |
Coating of substrate containing semiconductor region or of semiconductor substrate |
895 |
| 438/765 |
By reaction with substrate |
178 |
| 438/767 |
Compound semiconductor substrate |
141 |
| 438/766 |
Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.) |
318 |
| 438/768 |
Reaction with conductive region |
113 |
| 438/769 |
Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) |
291 |
| 438/775 |
Nitridation |
368 |
| 438/776 |
Using electromagnetic or wave energy |
102 |
| 438/777 |
Microwave gas energizing |
58 |
| 438/770 |
Oxidation |
607 |
| 438/774 |
In atmosphere containing halogen |
106 |
| 438/773 |
In atmosphere containing water vapor (i.e., wet oxidation) |
188 |
| 438/771 |
Using electromagnetic or wave energy |
132 |
| 438/772 |
Microwave gas energizing |
39 |
| 438/759 |
Combined with the removal of material by nonchemical means |
219 |
| 438/764 |
Formation of semi-insulative polycrystalline silicon |
113 |
| 438/778 |
Insulative material deposited upon semiconductive substrate |
1187 |
| 438/779 |
Compound semiconductor substrate |
127 |
| 438/780 |
Depositing organic material (e.g., polymer, etc.) |
1010 |
| 438/781 |
Subsequent heating modifying organic coating composition |
567 |
| 438/783 |
Insulative material having impurity (e.g., for altering physical characteristics, etc.) |
376 |
| 438/784 |
Introduction simultaneous with deposition |
262 |
| 438/785 |
Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
678 |
| 438/791 |
Silicon nitride formation |
442 |
| 438/794 |
Organic reactant |
64 |
| 438/792 |
Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) |
292 |
| 438/793 |
Organic reactant |
57 |
| 438/787 |
Silicon oxide formation |
813 |
| 438/790 |
Organic reactant |
414 |
| 438/788 |
Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) |
590 |
| 438/789 |
Organic reactant |
378 |
| 438/786 |
Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) |
355 |
| 438/782 |
With substrate handling during coating (e.g., immersion, spinning, etc.) |
519 |
| 438/761 |
Multiple layers |
532 |
| 438/762 |
At least one layer formed by reaction with substrate |
294 |
| 438/763 |
Layers formed of diverse composition or by diverse coating processes |
932 |
| 438/760 |
Utilizing reflow (e.g., planarization, etc.) |
260 |
| 438/584 |
Coating with electrically or thermally conductive material |
437 |
| 438/585 |
Insulated gate formation |
1000 |
| 438/586 |
Combined with formation of ohmic contact to semiconductor region |
1023 |
| 438/590 |
Compound semiconductor |
104 |
| 438/587 |
Forming array of gate electrodes |
452 |
| 438/588 |
Plural gate levels |
244 |
| 438/591 |
Gate insulator structure constructed of plural layers or nonsilicon containing compound |
592 |
| 438/595 |
Having sidewall structure |
890 |
| 438/596 |
Portion of sidewall structure is conductive |
285 |
| 438/592 |
Possessing plural conductive layers (e.g., polycide) |
1248 |
| 438/593 |
Separated by insulator (i.e., floating gate) |
568 |
| 438/594 |
Tunnelling dielectric layer |
320 |
| 438/589 |
Recessed into semiconductor substrate |
515 |
| 438/597 |
To form ohmic contact to semiconductive material |
736 |
| 438/658 |
Altering composition of conductor |
279 |
| 438/659 |
Implantation of ion into conductor |
319 |
| 438/688 |
Aluminum or aluminum alloy conductor |
623 |
| 438/669 |
And patterning of conductive layer |
702 |
| 438/672 |
Plug formation (i.e., in viahole) |
1198 |
| 438/673 |
Tapered etching |
178 |
| 438/670 |
Utilizing lift-off |
175 |
| 438/671 |
Utilizing multilayered mask |
229 |
| 438/611 |
Beam lead formation |
183 |
| 438/610 |
Conductive macromolecular conductor (including metal powder filled composition) |
85 |
| 438/618 |
Contacting multiple semiconductive regions (i.e., interconnects) |
1243 |
| 438/619 |
Air bridge structure |
405 |
| 438/621 |
Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.) |
160 |
| 438/642 |
Diverse conductors |
202 |
| 438/643 |
At least one layer forms a diffusion barrier |
979 |
| 438/644 |
Having adhesion promoting layer |
294 |
| 438/647 |
Having electrically conductive polysilicon component |
273 |
| 438/650 |
Having noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
199 |
| 438/651 |
Silicide |
155 |
| 438/645 |
Having planarization step |
276 |
| 438/646 |
Utilizing reflow |
92 |
| 438/648 |
Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
833 |
| 438/649 |
Silicide |
529 |
| 438/620 |
Forming contacts of differing depths into semiconductor substrate |
312 |
| 438/622 |
Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) |
1784 |
| 438/625 |
At least one metallization level formed of diverse conductive layers |
420 |
| 438/627 |
At least one layer forms a diffusion barrier |
947 |
| 438/629 |
Diverse conductive layers limited to viahole/plug |
725 |
| 438/630 |
Silicide formation |
243 |
| 438/628 |
Having adhesion promoting layer |
296 |
| 438/626 |
Planarization |
600 |
| 438/631 |
Having planarization step |
680 |
| 438/633 |
Simultaneously by chemical and mechanical means |
812 |
| 438/634 |
Utilizing etch-stop layer |
458 |
| 438/632 |
Utilizing reflow |
189 |
| 438/623 |
Including organic insulating material between metal levels |
768 |
| 438/636 |
Including use of antireflective layer |
395 |
| 438/635 |
Insulator formed by reaction with conductor (e.g., oxidation, etc.) |
202 |
| 438/641 |
Selective deposition |
184 |
| 438/624 |
Separating insulating layer is laminate or composite of plural insulating materials |
1371 |
| 438/637 |
With formation of opening (i.e., viahole) in insulative layer |
2502 |
| 438/640 |
Having viahole of tapered shape |
462 |
| 438/639 |
Having viahole with sidewall component |
663 |
| 438/638 |
Having viaholes of diverse width |
926 |
| 438/687 |
Copper of copper alloy conductor |
1484 |
| 438/684 |
Electrically conductive polysilicon |
203 |
| 438/678 |
Electroless deposition of conductive layer |
490 |
| 438/679 |
Evaporative coating of conductive layer |
116 |
| 438/612 |
Forming solder contact or bonding pad |
1374 |
| 438/613 |
Bump electrode |
1287 |
| 438/615 |
Including fusion of conductor |
252 |
| 438/616 |
By transcription from auxiliary substrate |
124 |
| 438/617 |
By wire bonding |
364 |
| 438/614 |
Plural conductive layers |
730 |
| 438/660 |
Including heat treatment of conductive layer |
731 |
| 438/663 |
Rapid thermal anneal |
256 |
| 438/664 |
Forming silicide |
532 |
| 438/661 |
Subsequent fusing conductive layer |
130 |
| 438/662 |
Utilizing laser |
137 |
| 438/686 |
Noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
366 |
| 438/608 |
Oxidic conductor (e.g., indium tin oxide, etc.) |
132 |
| 438/609 |
Transparent conductor |
110 |
| 438/652 |
Plural layered electrode or conductor |
530 |
| 438/653 |
At least one layer forms a diffusion barrier |
1075 |
| 438/654 |
Having adhesion promoting layer |
338 |
| 438/657 |
Having electrically conductive polysilicon component |
304 |
| 438/656 |
Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
884 |
| 438/655 |
Silicide |
935 |
| 438/685 |
Refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
808 |
| 438/674 |
Selective deposition of conductive layer |
362 |
| 438/675 |
Plug formation (i.e., in viahole) |
792 |
| 438/677 |
Pretreatment of surface to enhance or retard deposition |
304 |
| 438/676 |
Utilizing electromagnetic or wave energy |
154 |
| 438/598 |
Selectively interconnecting (e.g., customization, wafer scale integration, etc.) |
326 |
| 438/600 |
Using structure alterable to conductive state (i.e., antifuse) |
273 |
| 438/601 |
Using structure alterable to nonconductive state (i.e., fuse) |
307 |
| 438/599 |
With electrical circuit layout |
203 |
| 438/682 |
Silicide |
682 |
| 438/683 |
Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
690 |
| 438/666 |
Specified configuration of electrode or contact |
645 |
| 438/667 |
Conductive feedthrough or through-hole in substrate |
389 |
| 438/668 |
Specified aspect ratio of conductor or viahole |
245 |
| 438/602 |
To compound semiconductor |
135 |
| 438/603 |
Ii-vi compound semiconductor |
77 |
| 438/604 |
Iii-v compound semiconductor |
221 |
| 438/606 |
Ga and as containing semiconductor |
165 |
| 438/605 |
Multilayer electrode |
142 |
| 438/680 |
Utilizing chemical vapor deposition (i.e., cvd) |
931 |
| 438/681 |
Of organo-metallic precursor (i.e., mocvd) |
442 |
| 438/665 |
Utilizing textured surface |
175 |
| 438/607 |
With epitaxial conductor formation |
152 |
| 438/907 |
Continuous processing |
122 |
| 438/908 |
Utilizing cluster apparatus |
92 |
| 438/909 |
Controlled atmosphere |
198 |
| 438/910 |
Controlling charging state at semiconductor-insulator interface |
132 |
| 438/911 |
Differential oxidation and etching |
142 |
| 438/466 |
Direct application of electrical current |
160 |
| 438/468 |
Electromigration |
54 |
| 438/470 |
Fusion of semiconductor region |
20 |
| 438/467 |
To alter conductivity of fuse or antifuse element |
225 |
| 438/469 |
Utilizing pulsed current |
28 |
| 438/912 |
Displacing pn junction |
11 |
| 438/913 |
Diverse treatments performed in unitary chamber |
97 |
| 438/914 |
Doping |
46 |
| 438/915 |
Amphoteric doping |
18 |
| 438/916 |
Autodoping control or utilization |
35 |
| 438/919 |
Compensation doping |
85 |
| 438/920 |
Controlling diffusion profile by oxidation |
55 |
| 438/917 |
Deep level dopants (e.g., gold (au), chromium (cr), iron (fe), nickel (ni), etc.) |
23 |
| 438/922 |
Diffusion along grain boundaries |
15 |
| 438/923 |
Diffusion through a layer |
78 |
| 438/925 |
Fluid growth doping control (e.g., delta doping, etc.) |
110 |
| 438/921 |
Nonselective diffusion |
5 |
| 438/918 |
Special or nonstandard dopant |
72 |
| 438/924 |
To facilitate selective etching |
91 |
| 438/926 |
Dummy metallization |
153 |
| 438/927 |
Electromigration resistant metallization |
86 |
| 438/20 |
Electron emitter manufacture |
383 |
| 438/929 |
Eutectic semiconductor |
19 |
| 438/400 |
Formation of electrically isolated lateral semiconductive structure |
213 |
| 438/402 |
And gettering of substrate |
72 |
| 438/454 |
Field plate electrode |
103 |
| 438/424 |
Grooved and refilled with deposited dielectric material |
1557 |
| 438/430 |
And deposition of polysilicon or noninsulative material into groove |
353 |
| 438/431 |
Oxidation of deposited material |
185 |
| 438/432 |
Nonoxidized portions remaining in groove after oxidation |
114 |
| 438/429 |
And epitaxial semiconductor formation in groove |
143 |
| 438/425 |
Combined with formation of recessed oxide by localized oxidation |
294 |
| 438/426 |
Recessed oxide laterally extending from groove |
255 |
| 438/433 |
Dopant addition |
252 |
| 438/434 |
From doped insulator in groove |
52 |
| 438/435 |
Multiple insulative layers in groove |
568 |
| 438/437 |
Conformal insulator formation |
376 |
| 438/436 |
Reflow of insulator |
85 |
| 438/427 |
Refilling multiple grooves of different widths or depths |
492 |
| 438/428 |
Reflow of insulator |
50 |
| 438/438 |
Reflow of insulator |
100 |
| 438/421 |
Having air-gap dielectric (e.g., groove, etc.) |
274 |
| 438/422 |
Enclosed cavity |
182 |
| 438/403 |
Having semi-insulating component |
101 |
| 438/401 |
Having substrate registration feature (e.g., alignment mark) |
588 |
| 438/423 |
Implanting to form insulator |
172 |
| 438/414 |
Isolation by pn junction only |
48 |
| 438/420 |
Plural doping steps |
78 |
| 438/415 |
Thermomigration |
29 |
| 438/416 |
With epitaxial semiconductor formation |
63 |
| 438/417 |
And simultaneous polycrystalline growth |
16 |
| 438/418 |
Dopant addition |
39 |
| 438/419 |
Plural doping steps |
84 |
| 438/439 |
Recessed oxide by localized oxidation (i.e., locos) |
321 |
| 438/453 |
And electrical conductor formation (i.e., metallization) |
191 |
| 438/449 |
Dopant addition |
140 |
| 438/450 |
Implanting through recessed oxide |
114 |
| 438/451 |
Plural doping steps |
134 |
| 438/443 |
Etchback of recessed oxide |
204 |
| 438/440 |
Including nondopant implantation |
98 |
| 438/452 |
Plural oxidation steps to form recessed oxide |
121 |
| 438/444 |
Preliminary etching of groove |
153 |
| 438/445 |
Masking of groove sidewall |
155 |
| 438/447 |
Dopant addition |
66 |
| 438/446 |
Polysilicon containing sidewall |
49 |
| 438/448 |
Utilizing oxidation mask having polysilicon component |
149 |
| 438/441 |
With electrolytic treatment step |
22 |
| 438/442 |
With epitaxial semiconductor layer formation |
130 |
| 438/404 |
Total dielectric isolation |
295 |
| 438/411 |
Air isolation (e.g., beam lead supported semiconductor islands, etc.) |
129 |
| 438/412 |
Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.) |
164 |
| 438/405 |
And separate partially isolated semiconductor regions |
143 |
| 438/406 |
Bonding of plural semiconductive substrates |
373 |
| 438/410 |
Encroachment of separate locally oxidized regions |
67 |
| 438/407 |
Nondopant implantation |
199 |
| 438/408 |
With electrolytic treatment step |
36 |
| 438/409 |
Porous semiconductor formation |
125 |
| 438/413 |
With epitaxial semiconductor formation |
168 |
| 438/478 |
Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) |
447 |
| 438/482 |
Amorphous semiconductor |
377 |
| 438/486 |
And subsequent crystallization |
618 |
| 438/487 |
Utilizing wave energy (e.g., laser, electron beam, etc.) |
612 |
| 438/483 |
Compound semiconductor |
224 |
| 438/485 |
Deposition utilizing plasma (e.g., glow discharge, etc.) |
293 |
| 438/484 |
Running length (e.g., sheet, strip, etc.) |
69 |
| 438/503 |
Fluid growth from gaseous state combined with preceding diverse operation |
150 |
| 438/504 |
Differential etching |
97 |
| 438/505 |
Doping of semiconductor |
67 |
| 438/506 |
Ion implantation |
79 |
| 438/507 |
Fluid growth from gaseous state combined with subsequent diverse operation |
186 |
| 438/508 |
Doping of semiconductor |
105 |
| 438/509 |
Heat treatment |
171 |
| 438/497 |
Fluid growth from liquid combined with preceding diverse operation |
46 |
| 438/498 |
Differential etching |
26 |
| 438/499 |
Doping of semiconductor |
29 |
| 438/500 |
Fluid growth from liquid combined with subsequent diverse operation |
56 |
| 438/501 |
Doping of semiconductor |
39 |
| 438/502 |
Heat treatment |
78 |
| 438/492 |
Fluid growth step with preceding and subsequent diverse operation |
184 |
| 438/479 |
On insulating substrate or layer |
738 |
| 438/480 |
Including implantation of ion which reacts with semiconductor substrate to form insulating layer |
112 |
| 438/481 |
Utilizing epitaxial lateral overgrowth |
357 |
| 438/493 |
Plural fluid growth steps with intervening diverse operation |
70 |
| 438/496 |
Coating of semiconductive substrate with nonsemiconductive material |
40 |
| 438/494 |
Differential etching |
118 |
| 438/495 |
Doping of semiconductor |
50 |
| 438/488 |
Polycrystalline semiconductor |
471 |
| 438/491 |
And subsequent doping of polycrystalline semiconductor |
94 |
| 438/490 |
Running length (e.g., sheet, strip, etc.) |
56 |
| 438/489 |
Simultaneous single crystal formation |
149 |
| 438/309 |
Forming bipolar transistor by formation or alteration of semiconductive active regions |
404 |
| 438/322 |
Complementary bipolar transistors |
147 |
| 438/323 |
Having common active region (i.e., integrated injection logic (i2l), etc.) |
39 |
| 438/325 |
Having lateral bipolar transistor |
76 |
| 438/324 |
Including additional electrical device |
42 |
| 438/327 |
Having lateral bipolar transistor |
50 |
| 438/326 |
Including additional electrical device |
40 |
| 438/351 |
Direct application of electrical current |
11 |
| 438/346 |
Emitter dip prevention or utilization |
8 |
| 438/350 |
Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.) |
164 |
| 438/334 |
Forming inverted transistor structure |
35 |
| 438/335 |
Forming lateral transistor structure |
75 |
| 438/337 |
Active region formed along groove or exposed edge in semiconductor |
52 |
| 438/336 |
Combined with vertical bipolar transistor |
52 |
| 438/338 |
Having multiple emitter or collector structure |
35 |
| 438/339 |
Self-aligned |
85 |
| 438/352 |
Fusion or solidification of semiconductor region |
8 |
| 438/310 |
Gettering of semiconductor substrate |
57 |
| 438/333 |
Having fuse or integral short |
70 |
| 438/312 |
Having heterojunction |
303 |
| 438/314 |
And additional electrical device |
69 |
| 438/313 |
Complementary bipolar transistors |
87 |
| 438/315 |
Forming inverted transistor structure |
45 |
| 438/316 |
Forming lateral transistor structure |
51 |
| 438/318 |
Including isolation structure |
108 |
| 438/319 |
Air isolation (e.g., mesa, etc.) |
75 |
| 438/320 |
Self-aligned |
146 |
| 438/321 |
Utilizing dummy emitter |
43 |
| 438/317 |
Wide bandgap emitter |
82 |
| 438/342 |
Having multiple emitter or collector structure |
67 |
| 438/328 |
Including diode |
164 |
| 438/353 |
Including isolation structure |
109 |
| 438/359 |
Dielectric isolation formed by grooving and refilling with dielectrical material |
187 |
| 438/361 |
Including deposition of polysilicon or noninsulative material into groove |
110 |
| 438/360 |
With epitaxial semiconductor formation in groove |
59 |
| 438/354 |
Having semi-insulative region |
23 |
| 438/356 |
Isolation by pn junction only |
32 |
| 438/357 |
Including epitaxial semiconductor layer formation |
117 |
| 438/358 |
Up diffusion of dopant from substrate into epitaxial layer |
90 |
| 438/362 |
Recessed oxide by localized oxidation (i.e., locos) |
124 |
| 438/363 |
With epitaxial semiconductor layer formation |
140 |
| 438/355 |
Total dielectrical isolation |
93 |
| 438/329 |
Including passive device (e.g., resistor, capacitor, etc.) |
131 |
| 438/330 |
Resistor |
95 |
| 438/331 |
Having same doping as emitter or collector |
34 |
| 438/332 |
Lightly doped junction isolated resistor |
36 |
| 438/340 |
Making plural bipolar transistors of differing electrical characteristics |
97 |
| 438/343 |
Mesa or stacked emitter |
97 |
| 438/311 |
On insulating substrate or layer (i.e., soi type) |
294 |
| 438/349 |
Pedestal base |
40 |
| 438/347 |
Permeable or metal base |
29 |
| 438/378 |
Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
91 |
| 438/364 |
Self-aligned |
95 |
| 438/369 |
Dopant implantation or diffusion |
146 |
| 438/370 |
Forming buried region (e.g., implanting through insulating layer, etc.) |
185 |
| 438/371 |
Simultaneous introduction of plural dopants |
43 |
| 438/372 |
Plural doping steps |
94 |
| 438/375 |
Forming partially overlapping regions |
76 |
| 438/373 |
Multiple ion implantation steps |
133 |
| 438/374 |
Using same conductivity-type dopant |
83 |
| 438/376 |
Single dopant forming regions of different depth or concentrations |
72 |
| 438/377 |
Through same mask opening |
62 |
| 438/365 |
Forming active region from adjacent doped polycrystalline or amorphous semiconductor |
233 |
| 438/366 |
Having sidewall |
191 |
| 438/367 |
Including conductive component |
67 |
| 438/368 |
Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor |
99 |
| 438/348 |
Sidewall base contact |
85 |
| 438/341 |
Using epitaxial lateral overgrowth |
118 |
| 438/345 |
Walled emitter |
72 |
| 438/344 |
Washed emitter |
12 |
| 438/570 |
Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) |
185 |
| 438/571 |
Combined with formation of ohmic contact to semiconductor region |
381 |
| 438/572 |
Compound semiconductor |
120 |
| 438/576 |
Into grooved or recessed semiconductor region |
91 |
| 438/578 |
Forming electrode of specified shape (e.g., slanted, etc.) |
46 |
| 438/579 |
T-shaped electrode |
94 |
| 438/577 |
Utilizing lift-off |
65 |
| 438/573 |
Multilayer electrode |
89 |
| 438/574 |
T-shaped electrode |
103 |
| 438/575 |
Using platinum group metal (i.e., platinum (pt), palladium (pd), rodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
43 |
| 438/580 |
Using platinum group metal (i.e., platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
47 |
| 438/581 |
Silicide |
122 |
| 438/582 |
Using refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
104 |
| 438/583 |
Silicide |
136 |
| 438/978 |
Forming tapered edges on substrate or adjacent layers |
267 |
| 438/928 |
Front and rear surface processing |
280 |
| 438/935 |
Gas flow control |
177 |
| 438/933 |
Germanium or silicon or ge-si on iii-v |
265 |
| 438/471 |
Gettering of substrate |
262 |
| 438/473 |
By implanting or irradiating |
194 |
| 438/474 |
Ionized radiation (e.g., corpuscular or plasma treatment, etc.) |
119 |
| 438/475 |
Hydrogen plasma (i.e., hydrogenization) |
124 |
| 438/476 |
By layers which are coated, contacted, or diffused |
257 |
| 438/477 |
By vapor phase surface reaction |
94 |
| 438/472 |
By vibrating or impacting |
33 |
| 438/936 |
Graded energy gap |
84 |
| 438/1 |
Having biomaterial component or integrated with living organism |
79 |
| 438/105 |
Having diamond semiconductor component |
193 |
| 438/19 |
Having integral power source (e.g., battery, etc.) |
37 |
| 438/3 |
Having magnetic or ferroelectric component |
1718 |
| 438/104 |
Having metal oxide or copper sulfide compound semiconductor component |
145 |
| 438/99 |
Having organic semiconductive component |
692 |
| 438/102 |
Having selenium or tellurium elemental semiconductor component |
130 |
| 438/103 |
Direct application of electrical current |
37 |
| 438/2 |
Having superconductive component |
106 |
| 438/937 |
Hillock prevention |
40 |
| 438/5 |
Including control responsive to sensed condition |
430 |
| 438/10 |
Electrical characteristic sensed |
274 |
| 438/13 |
Altering electrical property by material removal |
72 |
| 438/12 |
And removal of defect |
114 |
| 438/11 |
Utilizing integral test element |
172 |
| 438/6 |
Interconnecting plural devices on semiconductor substrate |
149 |
| 438/7 |
Optical characteristic sensed |
386 |
| 438/8 |
Chemical etching |
238 |
| 438/9 |
Plasma etching |
301 |
| 438/510 |
Introduction of conductivity modifying dopant into semiconductive material |
243 |
| 438/535 |
By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) |
174 |
| 438/536 |
Recoil implantation |
11 |
| 438/542 |
Diffusing a dopant |
182 |
| 438/556 |
Edge diffusion by using edge portion of structure other than masking layer to mask |
37 |
| 438/545 |
Forming partially overlapping regions |
90 |
| 438/557 |
From melt |
29 |
| 438/558 |
From solid dopant source in contact with semiconductor region |
227 |
| 438/561 |
Dopant source within trench or groove |
94 |
| 438/563 |
Glassy source or doped oxide |
177 |
| 438/562 |
Organic source |
19 |
| 438/560 |
Plural diffusion stages |
62 |
| 438/564 |
Polycrystalline semiconductor source |
218 |
| 438/559 |
Using capping layer over dopant source to prevent out-diffusion of dopant |
75 |
| 438/565 |
From vapor phase |
87 |
| 438/569 |
Into compound semiconductor region |
54 |
| 438/566 |
Plural diffusion stages |
33 |
| 438/567 |
Solid source in operative relation with semiconductor region |
58 |
| 438/568 |
In capsule-type enclosure |
29 |
| 438/555 |
Laterally under mask opening |
70 |
| 438/550 |
Nonuniform heating |
18 |
| 438/554 |
Outwardly |
51 |
| 438/546 |
Plural dopants in same region (e.g., through same mask opening, etc.) |
139 |
| 438/547 |
Simultaneously |
55 |
| 438/548 |
Plural dopants simultaneously in plural regions |
81 |
| 438/549 |
Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.) |
144 |
| 438/543 |
To control carrier lifetime (i.e., deep level dopant) |
50 |
| 438/544 |
To solid-state solubility concentration |
12 |
| 438/553 |
Using metal mask |
16 |
| 438/551 |
Using multiple layered mask |
71 |
| 438/552 |
Having plural predetermined openings in master mask |
55 |
| 438/537 |
Fusing dopant with substrate (i.e., alloy junction) |
36 |
| 438/539 |
Application of pressure to material during fusion |
5 |
| 438/540 |
Including plural controlled heating or cooling steps or nonuniform heating |
99 |
| 438/541 |
Including diffusion after fusing step |
23 |
| 438/538 |
Using additional material to improve wettability or flow characteristics (e.g., flux, etc.) |
17 |
| 438/512 |
Involving nuclear transmutation doping |
33 |
| 438/514 |
Ion implantation of dopant into semiconductor region |
527 |
| 438/533 |
And contact formation (i.e., metallization) |
225 |
| 438/534 |
Rectifying contact (i.e., schottky contact) |
40 |
| 438/526 |
Forming buried region |
352 |
| 438/516 |
Including charge neutralization |
65 |
| 438/530 |
Including heat treatment |
396 |
| 438/527 |
Including multiple implantation steps |
424 |
| 438/528 |
Providing nondopant ion (e.g., proton, etc.) |
397 |
| 438/529 |
Using same conductivity-type dopant |
204 |
| 438/524 |
Into grooved semiconductor substrate region |
228 |
| 438/532 |
Into polycrystalline region |
219 |
| 438/515 |
Ionized molecules |
93 |
| 438/518 |
Of compound semiconductor |
91 |
| 438/523 |
And contact formation (i.e., metallization) |
74 |
| 438/522 |
Including heat treatment |
214 |
| 438/519 |
Including multiple implantation steps |
115 |
| 438/520 |
Providing nondopant ion (e.g., proton, etc.) |
123 |
| 438/521 |
Using same conductivity-type dopant |
39 |
| 438/517 |
Of semiconductor layer on insulating substrate or layer |
251 |
| 438/525 |
Using oblique beam |
292 |
| 438/531 |
Using shadow mask |
80 |
| 438/511 |
Ordering or disordering |
28 |
| 438/513 |
Plasma (e.g., glow discharge, etc.) |
188 |
| 438/961 |
Ion beam source and generation |
35 |
| 438/939 |
Langmuir-blodgett film utilization |
15 |
| 438/940 |
Laser ablative material removal |
175 |
| 438/938 |
Lattice strain control or utilization |
173 |
| 438/941 |
Loading effect mitigation |
19 |
| 438/141 |
Making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.) |
66 |
| 438/128 |
Making device array and selectively interconnecting |
475 |
| 438/130 |
Rendering selected devices operable or inoperable |
163 |
| 438/131 |
Using structure alterable to conductive state (i.e., antifuse) |
241 |
| 438/132 |
Using structure alterable to nonconductive state (i.e., fuse) |
341 |
| 438/129 |
With electrical circuit layout |
298 |
| 438/22 |
Making device or circuit emissive of nonelectrical signal |
1093 |
| 438/46 |
Compound semiconductor |
770 |
| 438/47 |
Heterojunction |
588 |
| 438/45 |
Dopant introduction into semiconductor region |
244 |
| 438/37 |
Graded composition |
136 |
| 438/42 |
Groove formation |
196 |
| 438/43 |
Tapered etching |
165 |
| 438/44 |
With epitaxial deposition of semiconductor in groove |
218 |
| 438/23 |
Having diverse electrical device |
121 |
| 438/24 |
Including device responsive to nonelectrical signal |
271 |
| 438/25 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
285 |
| 438/29 |
Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) |
878 |
| 438/30 |
Liquid crystal component |
919 |
| 438/32 |
Optical grating structure |
256 |
| 438/31 |
Optical waveguide structure |
500 |
| 438/34 |
Making emissive array |
290 |
| 438/35 |
Multiple wavelength emissive |
130 |
| 438/39 |
Mesa formation |
284 |
| 438/40 |
Tapered etching |
219 |
| 438/41 |
With epitaxial deposition of semiconductor adjacent mesa |
236 |
| 438/36 |
Ordered or disordered |
94 |
| 438/26 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
487 |
| 438/27 |
Having additional optical element (e.g., optical fiber, etc.) |
300 |
| 438/28 |
Plural emissive devices |
230 |
| 438/38 |
Passivating of surface |
144 |
| 438/33 |
Substrate dicing |
318 |
| 438/48 |
Making device or circuit responsive to nonelectrical signal |
1011 |
| 438/49 |
Chemically responsive |
178 |
| 438/50 |
Physical stress responsive |
494 |
| 438/52 |
Having cantilever element |
572 |
| 438/53 |
Having diaphragm element |
501 |
| 438/51 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
367 |
| 438/56 |
Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.) |
43 |
| 438/57 |
Responsive to electromagnetic radiation |
645 |
| 438/96 |
Amorphous semiconductor |
471 |
| 438/91 |
Avalanche diode |
70 |
| 438/93 |
Compound semiconductor |
214 |
| 438/95 |
Chalcogen (i.e., oxygen (o), sulfur (s), selenium (se), tellurium (te)) containing |
400 |
| 438/94 |
Heterojunction |
301 |
| 438/98 |
Contact formation (i.e., metallization) |
517 |
| 438/61 |
Continuous processing |
58 |
| 438/62 |
Using running length substrate |
125 |
| 438/88 |
Direct application of electric current |
52 |
| 438/83 |
Forming point contact |
32 |
| 438/89 |
Fusion or solidification of semiconductor region |
69 |
| 438/58 |
Gettering of substrate |
77 |
| 438/87 |
Graded composition |
90 |
| 438/59 |
Having diverse electrical device |
252 |
| 438/60 |
Charge transfer device (e.g., ccd, etc.) |
270 |
| 438/85 |
Having metal oxide or copper sulfide compound semiconductive component |
103 |
| 438/86 |
And cadmium sulfide compound semiconductive component |
42 |
| 438/82 |
Having organic semiconductor component |
220 |
| 438/84 |
Having selenium or tellurium elemental semiconductor component |
35 |
| 438/69 |
Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) |
360 |
| 438/70 |
Color filter |
236 |
| 438/72 |
Having reflective or antireflective component |
317 |
| 438/71 |
Specific surface topography (e.g., textured surface, etc.) |
154 |
| 438/90 |
Including storage of electrical charge in substrate |
20 |
| 438/73 |
Making electromagnetic responsive array |
364 |
| 438/75 |
Charge transfer device (e.g., ccd, etc.) |
242 |
| 438/77 |
Compound semiconductor |
43 |
| 438/78 |
Having structure to improve output signal (e.g., exposure control structure, etc.) |
62 |
| 438/79 |
Having blooming suppression structure (e.g., antiblooming drain, etc.) |
61 |
| 438/76 |
Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.) |
46 |
| 438/80 |
Lateral series connected array |
199 |
| 438/81 |
Specified shape junction barrier (e.g., v-grooved junction, etc.) |
48 |
| 438/74 |
Vertically arranged (e.g., tandem, stacked, etc.) |
125 |
| 438/64 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
439 |
| 438/65 |
Having additional optical element (e.g., optical fiber, etc.) |
256 |
| 438/66 |
Plural responsive devices (e.g., array, etc.) |
259 |
| 438/67 |
Assembly of plural semiconductor substrates |
255 |
| 438/63 |
Particulate semiconductor component |
109 |
| 438/97 |
Polycrystalline semiconductor |
303 |
| 438/92 |
Schottky barrier junction |
134 |
| 438/68 |
Substrate dicing |
207 |
| 438/54 |
Thermally responsive |
182 |
| 438/55 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
184 |
| 438/142 |
Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions |
263 |
| 438/144 |
Charge transfer device (e.g., ccd, etc.) |
142 |
| 438/147 |
Changing width or direction of channel (e.g., meandering channel, etc.) |
28 |
| 438/145 |
Having additional electrical device |
49 |
| 438/146 |
Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.) |
54 |
| 438/148 |
Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.) |
31 |
| 438/143 |
Gettering of semiconductor substrate |
127 |
| 438/197 |
Having insulated gate (e.g., igfet, misfet, mosfet, etc.) |
1381 |
| 438/286 |
Asymmetric |
617 |
| 438/282 |
Buried channel |
166 |
| 438/284 |
Closed or loop gate |
116 |
| 438/199 |
Complementary insulated gate field effect transistors (i.e., cmos) |
1075 |
| 438/200 |
And additional electrical device |
396 |
| 438/209 |
Including additional vertical channel insulated gate field effect transistor |
73 |
| 438/202 |
Including bipolar transistor (i.e., bicmos) |
330 |
| 438/203 |
Complementary bipolar transistors |
119 |
| 438/207 |
Including isolation structure |
260 |
| 438/208 |
Isolation by pn junction only |
57 |
| 438/204 |
Lateral bipolar transistor |
80 |
| 438/205 |
Plural bipolar transistors of differing electrical characteristics |
60 |
| 438/206 |
Vertical channel insulated gate field effect transistor |
118 |
| 438/201 |
Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate) |
483 |
| 438/210 |
Including passive device (e.g., resistor, capacitor, etc.) |
372 |
| 438/233 |
And contact formation |
353 |
| 438/213 |
Common active region |
62 |
| 438/217 |
Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.) |
441 |
| 438/216 |
Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound |
396 |
| 438/215 |
Having fuse or integral short |
103 |
| 438/211 |
Having gate surrounded by dielectric (i.e., floating gate) |
366 |
| 438/214 |
Having underpass or crossunder |
25 |
| 438/218 |
Including isolation structure |
224 |
| 438/221 |
Dielectric isolation formed by grooving and refilling with dielectric material |
355 |
| 438/223 |
Having well structure of opposite conductivity type |
150 |
| 438/224 |
Plural wells |
210 |
| 438/222 |
With epitaxial semiconductor layer formation |
138 |
| 438/220 |
Isolation by pn junction only |
100 |
| 438/225 |
Recessed oxide formed by localized oxidation (i.e., locos) |
167 |
| 438/227 |
Having well structure of opposite conductivity type |
240 |
| 438/228 |
Plural wells |
300 |
| 438/226 |
With epitaxial semiconductor layer formation |
101 |
| 438/219 |
Total dielectric isolation |
90 |
| 438/229 |
Self-aligned |
198 |
| 438/232 |
Plural doping steps |
351 |
| 438/230 |
Utilizing gate sidewall structure |
291 |
| 438/231 |
Plural doping steps |
578 |
| 438/212 |
Vertical channel |
241 |
| 438/292 |
Direct application of electrical current |
35 |
| 438/289 |
Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) |
573 |
| 438/290 |
After formation of source or drain regions and gate electrode |
176 |
| 438/291 |
Using channel conductivity dopant of opposite type as that of source and drain |
370 |
| 438/293 |
Fusion or solidification of semiconductor region |
24 |
| 438/287 |
Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound |
842 |
| 438/257 |
Having additional gate electrode surrounded by dielectric (i.e., floating gate) |
2181 |
| 438/266 |
Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.) |
590 |
| 438/267 |
Including forming gate electrode as conductive sidewall spacer to another electrode |
326 |
| 438/258 |
Including additional field effect transistor (e.g., sense or access transistor, etc.) |
959 |
| 438/262 |
Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.) |
285 |
| 438/263 |
Tunneling insulator |
272 |
| 438/259 |
Including forming gate electrode in trench or recess in substrate |
703 |
| 438/261 |
Multiple interelectrode dielectrics or nonsilicon compound gate insulator |
599 |
| 438/265 |
Oxidizing sidewall of gate electrode |
254 |
| 438/260 |
Textured surface of gate insulator or gate electrode |
177 |
| 438/264 |
Tunneling insulator |
826 |
| 438/281 |
Having fuse or integral short |
202 |
| 438/288 |
Having step of storing electrical charge in gate dielectric |
135 |
| 438/280 |
Having underpass or crossunder |
51 |
| 438/234 |
Including bipolar transistor (i.e., bimos) |
356 |
| 438/235 |
Heterojunction bipolar transistor |
117 |
| 438/236 |
Lateral bipolar transistor |
66 |
| 438/237 |
Including diode |
260 |
| 438/294 |
Including isolation structure |
351 |
| 438/296 |
Dielectric isolation formed by grooving and refilling with dielectric material |
765 |
| 438/297 |
Recessed oxide formed by localized oxidation (i.e., locos) |
473 |
| 438/298 |
Doping region beneath recessed oxide (e.g., to form chanstop, etc.) |
283 |
| 438/295 |
Total dielectric isolation |
124 |
| 438/238 |
Including passive device (e.g., resistor, capacitor, etc.) |
1247 |
| 438/239 |
Capacitor |
1055 |
| 438/241 |
And additional field effect transistor (e.g., sense or access transistor, etc.) |
627 |
| 438/242 |
Including transistor formed on trench sidewalls |
231 |
| 438/240 |
Having high dielectric constant insulator (e.g., ta2o5, etc.) |
1305 |
| 438/250 |
Planar capacitor |
453 |
| 438/251 |
Including doping of semiconductive region |
135 |
| 438/252 |
Multiple doping steps |
90 |
| 438/253 |
Stacked capacitor |
2344 |
| 438/256 |
Contacts formed by selective growth or deposition |
254 |
| 438/254 |
Including selectively removing material to undercut and expose storage node layer |
643 |
| 438/255 |
Including texturizing storage node layer |
665 |
| 438/243 |
Trench capacitor |
835 |
| 438/246 |
Including doping of trench surfaces |
205 |
| 438/249 |
Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.) |
142 |
| 438/248 |
Including isolation means formed in trench |
224 |
| 438/247 |
Multiple doping steps |
74 |
| 438/244 |
Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.) |
465 |
| 438/245 |
With epitaxial layer formed over the trench |
116 |
| 438/279 |
Making plural insulated gate field effect transistors having common active region |
426 |
| 438/275 |
Making plural insulated gate field effect transistors of differing electrical characteristics |
1011 |
| 438/276 |
Introducing a dopant into the channel region of selected transistors |
309 |
| 438/278 |
After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.) |
269 |
| 438/277 |
Including forming overlapping gate electrodes |
45 |
| 438/283 |
Plural gate electrodes (e.g., dual gate, etc.) |
419 |
| 438/308 |
Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
379 |
| 438/299 |
Self-aligned |
561 |
| 438/300 |
Having elevated source or drain (e.g., epitaxially formed source or drain, etc.) |
654 |
| 438/301 |
Source or drain doping |
1098 |
| 438/302 |
Oblique implantation |
473 |
| 438/306 |
Plural doping steps |
533 |
| 438/307 |
Using same conductivity-type dopant |
410 |
| 438/303 |
Utilizing gate sidewall structure |
1302 |
| 438/304 |
Conductive sidewall component |
257 |
| 438/305 |
Plural doping steps |
1576 |
| 438/198 |
Specified crystallographic orientation |
126 |
| 438/285 |
Utilizing compound semiconductor |
256 |
| 438/268 |
Vertical channel |
713 |
| 438/270 |
Gate electrode in trench or recess in semiconductor substrate |
1008 |
| 438/272 |
Totally embedded in semiconductive layers |
141 |
| 438/271 |
V-gate |
146 |
| 438/273 |
Having integral short of source and base regions |
145 |
| 438/274 |
Short formed in recess in substrate |
61 |
| 438/269 |
Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer |
143 |
| 438/186 |
Having junction gate (e.g., jfet, sit, etc.) |
99 |
| 438/189 |
And bipolar transistor |
52 |
| 438/190 |
And passive device (e.g., resistor, capacitor, etc.) |
54 |
| 438/188 |
Complementary junction gate field effect transistors |
51 |
| 438/194 |
Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) |
75 |
| 438/191 |
Having heterojunction |
57 |
| 438/196 |
Including isolation structure |
77 |
| 438/195 |
Plural gate electrodes |
107 |
| 438/187 |
Specified crystallographic orientation |
24 |
| 438/192 |
Vertical channel |
99 |
| 438/193 |
Multiple parallel current paths (e.g., grid gate, etc.) |
80 |
| 438/167 |
Having schottky gate (e.g., mesfet, hemt, etc.) |
260 |
| 438/170 |
And bipolar device |
33 |
| 438/171 |
And passive electrical device (e.g., resistor, capacitor, etc.) |
64 |
| 438/179 |
Asymmetric |
69 |
| 438/175 |
Buried channel |
37 |
| 438/177 |
Closed or loop gate |
8 |
| 438/169 |
Complementary schottky gate field effect transistors |
41 |
| 438/174 |
Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) |
122 |
| 438/178 |
Elemental semiconductor |
23 |
| 438/172 |
Having heterojunction (e.g., hemt, modfet, etc.) |
289 |
| 438/176 |
Plural gate electrodes (e.g., dual gate, etc.) |
96 |
| 438/180 |
Self-aligned |
88 |
| 438/181 |
Doping of semiconductive region |
115 |
| 438/183 |
Dummy gate |
177 |
| 438/182 |
T-gate |
124 |
| 438/184 |
Utilizing gate sidewall structure |
119 |
| 438/185 |
Multiple doping steps |
46 |
| 438/168 |
Specified crystallographic orientation |
25 |
| 438/173 |
Vertical channel |
70 |
| 438/149 |
On insulating substrate or layer (e.g., tft, etc.) |
1694 |
| 438/151 |
Having insulated gate |
1213 |
| 438/163 |
Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.) |
370 |
| 438/155 |
And additional electrical device on insulating substrate or layer |
372 |
| 438/152 |
Combined with electrical device not on insulating substrate or layer |
293 |
| 438/153 |
Complementary field effect transistors |
276 |
| 438/154 |
Complementary field effect transistors |
432 |
| 438/166 |
Including recrystallization step |
1078 |
| 438/161 |
Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes) |
181 |
| 438/162 |
Introduction of nondopant into semiconductor layer |
316 |
| 438/158 |
Inverted transistor structure |
579 |
| 438/159 |
Source-to-gate or drain-to-gate overlap |
158 |
| 438/160 |
Utilizing backside irradiation |
155 |
| 438/157 |
Plural gate electrodes (e.g., dual gate, etc.) |
395 |
| 438/164 |
Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.) |
556 |
| 438/165 |
Including differential oxidation |
102 |
| 438/156 |
Vertical channel |
211 |
| 438/150 |
Specified crystallographic orientation |
224 |
| 438/957 |
Making metal-insulator-metal device |
98 |
| 438/956 |
Making multiple wavelength emissive device |
21 |
| 438/954 |
Making oxide-nitride-oxide device |
157 |
| 438/381 |
Making passive device (e.g., resistor, capacitor, etc.) |
716 |
| 438/393 |
Planar capacitor |
527 |
| 438/394 |
Including doping of semiconductive region |
95 |
| 438/395 |
Multiple doping steps |
80 |
| 438/382 |
Resistor |
336 |
| 438/384 |
Deposited thin film resistor |
342 |
| 438/385 |
Altering resistivity of conductor |
252 |
| 438/383 |
Lightly doped junction isolated resistor |
83 |
| 438/396 |
Stacked capacitor |
2323 |
| 438/399 |
Having contacts formed by selective growth or deposition |
291 |
| 438/397 |
Including selectively removing material to undercut and expose storage node layer |
560 |
| 438/398 |
Including texturizing storage node layer |
736 |
| 438/386 |
Trench capacitor |
746 |
| 438/387 |
Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.) |
353 |
| 438/389 |
Including doping of trench surfaces |
133 |
| 438/392 |
Doping by outdiffusion from a dopant source layer (e.g., doped oxide) |
102 |
| 438/391 |
Including isolation means formed in trench |
130 |
| 438/390 |
Multiple doping steps |
57 |
| 438/388 |
With epitaxial layer formed over the trench |
76 |
| 438/100 |
Making point contact device |
27 |
| 438/101 |
Direct application of electrical current |
12 |
| 438/953 |
Making radiation resistant device |
74 |
| 438/133 |
Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) |
211 |
| 438/139 |
Altering electrical characteristic |
78 |
| 438/134 |
Bidirectional rectifier with control electrode (e.g., triac, diac, etc.) |
48 |
| 438/135 |
Having field effect structure |
118 |
| 438/136 |
Junction gate |
21 |
| 438/137 |
Vertical channel |
89 |
| 438/138 |
Vertical channel |
239 |
| 438/140 |
Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.) |
129 |
| 438/21 |
Manufacture of electrical device controlled printhead |
283 |
| 438/942 |
Masking |
228 |
| 438/943 |
Movable |
26 |
| 438/948 |
Radiation resist |
156 |
| 438/949 |
Energy beam treating radiation resist on semiconductor |
167 |
| 438/951 |
Lift-off |
172 |
| 438/950 |
Multilayer mask including nonradiation sensitive layer |
148 |
| 438/952 |
Utilizing antireflective layer |
184 |
| 438/944 |
Shadow |
95 |
| 438/945 |
Special (e.g., metal, etc.) |
219 |
| 438/946 |
Step and repeat |
36 |
| 438/947 |
Subphotolithographic processing |
283 |
| 438/959 |
Mechanical polishing of wafer |
158 |
| 438/955 |
Melt-back |
26 |
| | Methods (156/1) | |
| 438/800 |
Miscellaneous |
282 |
| 438/106 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
2114 |
| 438/107 |
Assembly of plural semiconductive substrates each possessing electrical device |
1097 |
| 438/108 |
Flip-chip-type assembly |
1506 |
| 438/109 |
Stacked array (e.g., rectifier, etc.) |
843 |
| 438/127 |
Encapsulating |
1353 |
| 438/116 |
Having light transmissive window |
205 |
| 438/118 |
Including adhesive bonding step |
1467 |
| 438/119 |
Electrically conductive adhesive |
387 |
| 438/115 |
Including contaminant removal or mitigation |
151 |
| 438/117 |
Incorporating resilient component (e.g., spring, etc.) |
218 |
| 438/125 |
Insulative housing or support |
885 |
| 438/126 |
And encapsulating |
840 |
| 438/110 |
Making plural separate devices |
535 |
| 438/113 |
Substrate dicing |
968 |
| 438/114 |
Utilizing a coating to perfect the dicing |
303 |
| 438/111 |
Using strip lead frame |
417 |
| 438/112 |
And encapsulating |
609 |
| 438/121 |
Metallic housing or support |
510 |
| 438/124 |
And encapsulating |
853 |
| 438/123 |
Lead frame |
1250 |
| 438/122 |
Possessing thermal dissipation structure (i.e., heat sink) |
743 |
| 438/120 |
With vibration step |
67 |
| 438/958 |
Passivation layer |
232 |
| 438/960 |
Porous semiconductor |
149 |
| 438/962 |
Quantum dots and lines |
186 |
| 438/795 |
Radiation or energy treatment modifying properties of semiconductor region of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
857 |
| 438/799 |
By differential heating |
239 |
| 438/796 |
Compound semiconductor |
206 |
| 438/797 |
Ordering or disordering |
41 |
| 438/798 |
Ionized irradiation (e.g., corpuscular or plasma treatment, etc.) |
374 |
| 438/963 |
Removing process residues from vertical substrate surfaces |
117 |
| 438/4 |
Repair or restoration |
305 |
| 438/964 |
Roughened surface |
265 |
| 438/966 |
Selective oxidation of ion-amorphousized layer |
35 |
| 438/967 |
Semiconductor on specified insulator |
94 |
| 438/460 |
Semiconductor substrate dicing |
803 |
| 438/461 |
Beam lead formation |
81 |
| 438/463 |
By electromagnetic irradiation (e.g., electron, laser, etc.) |
192 |
| 438/465 |
Having a perfecting coating |
213 |
| 438/462 |
Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.) |
829 |
| 438/464 |
With attachment to temporary support or carrier |
596 |
| 438/968 |
Semiconductor-metal-semiconductor |
6 |
| 438/965 |
Shaped junction formation |
107 |
| 438/934 |
Sheet resistance (i.e., dopant parameters) |
59 |
| 438/931 |
Silicon carbide semiconductor |
307 |
| 438/969 |
Simultaneous formation of monocrystalline and polycrystalline regions |
74 |
| 438/970 |
Specified etch stop material |
192 |
| 438/971 |
Stoichiometric control of host substrate composition |
46 |
| 438/972 |
Stored charge erasure |
23 |
| 438/975 |
Substrate or mask aligning feature |
376 |
| 438/973 |
Substrate orientation |
92 |
| 438/974 |
Substrate surface preparation |
290 |
| 438/976 |
Temporary protective layer |
134 |
| 438/930 |
Ternary or quaternary semiconductor comprised of elements from three different groups (e.g., i-iii-v, etc.) |
69 |
| 438/977 |
Thinning or removal of substrate |
542 |
| 438/979 |
Tunnel diodes |
50 |
| 438/980 |
Utilizing process equivalents or options |
73 |
| 438/981 |
Utilizing varying dielectric thickness |
392 |
| 438/982 |
Varying orientation of devices in array |
28 |
| 438/379 |
Voltage variable capacitance device manufacture (e.g., varactor, etc.) |
81 |
| 438/14 |
With measuring or testing |
1942 |
| 438/17 |
Electrical characteristic sensed |
1027 |
| 438/18 |
Utilizing integral test element |
646 |
| 438/16 |
Optical characteristic sensed |
963 |
| 438/15 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
827 |
| 438/983 |
Zener diodes |
63 |
