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Class Information
Number: 438
Name: Semiconductor device manufacturing: process >
Description: A. This class provides for manufacturing a semiconductor containing a solid-state device by a combination of operations wherein:


Class Number Class Name No. of Patents
438/380

Avalanche diode manufacture (e.g., impatt, trappat, etc.)

92
438/455

Bonding of plural semiconductor substrates

969
438/456

Having enclosed cavity

278
438/458

Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)

765
438/459

Thinning of semiconductor substrate

839
438/457

Warping of semiconductor substrate

102
438/932

Boron nitride semiconductor

17
438/900

Bulk effect device making

48
438/901

Capacitive junction

28
438/902

Capping layer

105
438/903

Catalyst aided deposition

44
438/904

Charge carrier lifetime control

60
438/689

Chemical etching

654
438/705

Altering etchability of substrate region by compositional or crystalline modification

340
438/694

Combined with coating step

890
438/696

Coating of sidewall

503
438/700

Formation of groove or trench

1123
438/702

Plural coating steps

626
438/701

Tapered configuration

487
438/697

Planarization by etching and coating

426
438/699

Plural coating steps

396
438/698

Utilizing reflow

109
438/703

Plural coating steps

399
438/695

Simultaneous etching and coating

391
438/690

Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)

476
438/691

Combined mechanical and chemical material removal

720
438/692

Simultaneous (e.g., chemical-mechanical polishing, etc.)

2202
438/693

Utilizing particulate abradant

854
438/704

Having liquid and vapor etching steps

421
438/745

Liquid phase etching

1137
438/754

Electrically conductive material (e.g., metal, conductive oxide, etc.)

383
438/755

Silicide

48
438/752

Germanium

96
438/748

Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant

127
438/749

Sequential application of etchant

149
438/750

To same side of substrate

240
438/751

Each etch step exposes surface of an adjacent layer

142
438/757

Silicon nitride

214
438/756

Silicon oxide

420
438/753

Silicon

422
438/746

Utilizing electromagnetic or wave energy

84
438/747

With relative movement between substrate and confined pool of etchant

140
438/706

Vapor phase etching (i.e., dry etching)

1296
438/735

Differential etching of semiconductor substrate

235
438/737

Substrate possessing multiple layers

184
438/742

Electrically conductive material (e.g., metal, conductive oxide, etc.)

253
438/738

Selectively etching substrate possessing multiple layers of differing etch characteristics

598
438/739

Lateral etching of intermediate layer (i.e., undercutting)

270
438/740

Utilizing etch stop layer

351
438/741

Pn junction functions as etch stop

14
438/744

Silicon nitride

199
438/743

Silicon oxide or glass

406
438/736

Utilizing multilayered mask

254
438/734

Sequential etching steps on a single layer

508
438/707

Utilizing electromagnetic or wave energy

164
438/710

By creating electric field (e.g., plasma, glow discharge, etc.)

1155
438/718

Compound semiconductor

174
438/720

Electrically conductive material (e.g., metal, conductive oxide, etc.)

828
438/721

Silicide

176
438/713

Forming tapered profile (e.g., tapered etching, etc.)

304
438/726

Having microwave gas energizing

65
438/727

Producing energized gas remotely located from substrate

63
438/728

Using magnet (e.g., electron cyclotron resonance, etc.)

56
438/714

Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)

946
438/722

Metal oxide

141
438/725

Organic material (e.g., resist, etc.)

899
438/712

Reactive ion beam etching (i.e., ribe)

583
438/724

Silicon nitride

602
438/723

Silicon oxide or glass

1061
438/719

Silicon

695
438/732

Using magnet (e.g., electron cyclotron resonance, etc.)

98
438/729

Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma

215
438/730

Producing energized gas remotely located from substrate

56
438/731

Using intervening shield structure

42
438/717

Utilizing multilayered mask

355
438/711

Utilizing multiple gas energizing means

235
438/716

With substrate handling (e.g., conveying, etc.)

153
438/715

With substrate heating or cooling

317
438/708

Photo-induced etching

202
438/709

Photo-induced plasma etching

140
438/733

Using or orientation dependent etchant (i.e., anisotropic etchant)

142
438/905

Cleaning of reaction chamber

300
438/906

Cleaning of wafer as interim step

500
438/758

Coating of substrate containing semiconductor region or of semiconductor substrate

782
438/765

By reaction with substrate

159
438/767

Compound semiconductor substrate

133
438/766

Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

302
438/768

Reaction with conductive region

105
438/769

Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)

257
438/775

Nitridation

324
438/776

Using electromagnetic or wave energy

94
438/777

Microwave gas energizing

48
438/770

Oxidation

556
438/774

In atmosphere containing halogen

102
438/773

In atmosphere containing water vapor (i.e., wet oxidation)

178
438/771

Using electromagnetic or wave energy

122
438/772

Microwave gas energizing

35
438/759

Combined with the removal of material by nonchemical means

199
438/764

Formation of semi-insulative polycrystalline silicon

107
438/778

Insulative material deposited upon semiconductive substrate

1053
438/779

Compound semiconductor substrate

123
438/780

Depositing organic material (e.g., polymer, etc.)

906
438/781

Subsequent heating modifying organic coating composition

505
438/783

Insulative material having impurity (e.g., for altering physical characteristics, etc.)

339
438/784

Introduction simultaneous with deposition

254
438/785

Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

568
438/791

Silicon nitride formation

395
438/794

Organic reactant

54
438/792

Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

258
438/793

Organic reactant

49
438/787

Silicon oxide formation

750
438/790

Organic reactant

379
438/788

Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

542
438/789

Organic reactant

351
438/786

Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)

317
438/782

With substrate handling during coating (e.g., immersion, spinning, etc.)

496
438/761

Multiple layers

456
438/762

At least one layer formed by reaction with substrate

273
438/763

Layers formed of diverse composition or by diverse coating processes

860
438/760

Utilizing reflow (e.g., planarization, etc.)

248
438/584

Coating with electrically or thermally conductive material

380
438/585

Insulated gate formation

912
438/586

Combined with formation of ohmic contact to semiconductor region

984
438/590

Compound semiconductor

92
438/587

Forming array of gate electrodes

405
438/588

Plural gate levels

228
438/591

Gate insulator structure constructed of plural layers or nonsilicon containing compound

509
438/595

Having sidewall structure

829
438/596

Portion of sidewall structure is conductive

260
438/592

Possessing plural conductive layers (e.g., polycide)

1149
438/593

Separated by insulator (i.e., floating gate)

490
438/594

Tunnelling dielectric layer

300
438/589

Recessed into semiconductor substrate

451
438/597

To form ohmic contact to semiconductive material

612
438/658

Altering composition of conductor

266
438/659

Implantation of ion into conductor

303
438/688

Aluminum or aluminum alloy conductor

596
438/669

And patterning of conductive layer

655
438/672

Plug formation (i.e., in viahole)

1087
438/673

Tapered etching

157
438/670

Utilizing lift-off

170
438/671

Utilizing multilayered mask

204
438/611

Beam lead formation

169
438/610

Conductive macromolecular conductor (including metal powder filled composition)

79
438/618

Contacting multiple semiconductive regions (i.e., interconnects)

1085
438/619

Air bridge structure

366
438/621

Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)

151
438/642

Diverse conductors

188
438/643

At least one layer forms a diffusion barrier

901
438/644

Having adhesion promoting layer

279
438/647

Having electrically conductive polysilicon component

268
438/650

Having noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

170
438/651

Silicide

143
438/645

Having planarization step

257
438/646

Utilizing reflow

87
438/648

Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

795
438/649

Silicide

507
438/620

Forming contacts of differing depths into semiconductor substrate

270
438/622

Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)

1585
438/625

At least one metallization level formed of diverse conductive layers

389
438/627

At least one layer forms a diffusion barrier

861
438/629

Diverse conductive layers limited to viahole/plug

660
438/630

Silicide formation

217
438/628

Having adhesion promoting layer

274
438/626

Planarization

552
438/631

Having planarization step

644
438/633

Simultaneously by chemical and mechanical means

769
438/634

Utilizing etch-stop layer

439
438/632

Utilizing reflow

183
438/623

Including organic insulating material between metal levels

689
438/636

Including use of antireflective layer

369
438/635

Insulator formed by reaction with conductor (e.g., oxidation, etc.)

192
438/641

Selective deposition

176
438/624

Separating insulating layer is laminate or composite of plural insulating materials

1281
438/637

With formation of opening (i.e., viahole) in insulative layer

2247
438/640

Having viahole of tapered shape

427
438/639

Having viahole with sidewall component

607
438/638

Having viaholes of diverse width

823
438/687

Copper of copper alloy conductor

1358
438/684

Electrically conductive polysilicon

195
438/678

Electroless deposition of conductive layer

444
438/679

Evaporative coating of conductive layer

108
438/612

Forming solder contact or bonding pad

1198
438/613

Bump electrode

1119
438/615

Including fusion of conductor

229
438/616

By transcription from auxiliary substrate

114
438/617

By wire bonding

307
438/614

Plural conductive layers

654
438/660

Including heat treatment of conductive layer

707
438/663

Rapid thermal anneal

240
438/664

Forming silicide

502
438/661

Subsequent fusing conductive layer

127
438/662

Utilizing laser

130
438/686

Noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)

325
438/608

Oxidic conductor (e.g., indium tin oxide, etc.)

120
438/609

Transparent conductor

97
438/652

Plural layered electrode or conductor

480
438/653

At least one layer forms a diffusion barrier

1002
438/654

Having adhesion promoting layer

322
438/657

Having electrically conductive polysilicon component

291
438/656

Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

836
438/655

Silicide

880
438/685

Refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

741
438/674

Selective deposition of conductive layer

321
438/675

Plug formation (i.e., in viahole)

719
438/677

Pretreatment of surface to enhance or retard deposition

278
438/676

Utilizing electromagnetic or wave energy

133
438/598

Selectively interconnecting (e.g., customization, wafer scale integration, etc.)

299
438/600

Using structure alterable to conductive state (i.e., antifuse)

256
438/601

Using structure alterable to nonconductive state (i.e., fuse)

281
438/599

With electrical circuit layout

192
438/682

Silicide

610
438/683

Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)

663
438/666

Specified configuration of electrode or contact

602
438/667

Conductive feedthrough or through-hole in substrate

313
438/668

Specified aspect ratio of conductor or viahole

210
438/602

To compound semiconductor

121
438/603

Ii-vi compound semiconductor

68
438/604

Iii-v compound semiconductor

191
438/606

Ga and as containing semiconductor

161
438/605

Multilayer electrode

132
438/680

Utilizing chemical vapor deposition (i.e., cvd)

840
438/681

Of organo-metallic precursor (i.e., mocvd)

403
438/665

Utilizing textured surface

172
438/607

With epitaxial conductor formation

134
438/907

Continuous processing

119
438/908

Utilizing cluster apparatus

90
438/909

Controlled atmosphere

193
438/910

Controlling charging state at semiconductor-insulator interface

132
438/911

Differential oxidation and etching

141
438/466

Direct application of electrical current

151
438/468

Electromigration

52
438/470

Fusion of semiconductor region

19
438/467

To alter conductivity of fuse or antifuse element

210
438/469

Utilizing pulsed current

27
438/912

Displacing pn junction

10
438/913

Diverse treatments performed in unitary chamber

96
438/914

Doping

45
438/915

Amphoteric doping

18
438/916

Autodoping control or utilization

35
438/919

Compensation doping

84
438/920

Controlling diffusion profile by oxidation

55
438/917

Deep level dopants (e.g., gold (au), chromium (cr), iron (fe), nickel (ni), etc.)

22
438/922

Diffusion along grain boundaries

15
438/923

Diffusion through a layer

76
438/925

Fluid growth doping control (e.g., delta doping, etc.)

108
438/921

Nonselective diffusion

5
438/918

Special or nonstandard dopant

71
438/924

To facilitate selective etching

84
438/926

Dummy metallization

140
438/927

Electromigration resistant metallization

83
438/20

Electron emitter manufacture

360
438/929

Eutectic semiconductor

18
438/400

Formation of electrically isolated lateral semiconductive structure

192
438/402

And gettering of substrate

72
438/454

Field plate electrode

94
438/424

Grooved and refilled with deposited dielectric material

1403
438/430

And deposition of polysilicon or noninsulative material into groove

326
438/431

Oxidation of deposited material

178
438/432

Nonoxidized portions remaining in groove after oxidation

107
438/429

And epitaxial semiconductor formation in groove

124
438/425

Combined with formation of recessed oxide by localized oxidation

270
438/426

Recessed oxide laterally extending from groove

222
438/433

Dopant addition

239
438/434

From doped insulator in groove

50
438/435

Multiple insulative layers in groove

516
438/437

Conformal insulator formation

355
438/436

Reflow of insulator

78
438/427

Refilling multiple grooves of different widths or depths

449
438/428

Reflow of insulator

45
438/438

Reflow of insulator

91
438/421

Having air-gap dielectric (e.g., groove, etc.)

250
438/422

Enclosed cavity

163
438/403

Having semi-insulating component

93
438/401

Having substrate registration feature (e.g., alignment mark)

513
438/423

Implanting to form insulator

158
438/414

Isolation by pn junction only

46
438/420

Plural doping steps

77
438/415

Thermomigration

29
438/416

With epitaxial semiconductor formation

59
438/417

And simultaneous polycrystalline growth

15
438/418

Dopant addition

38
438/419

Plural doping steps

81
438/439

Recessed oxide by localized oxidation (i.e., locos)

312
438/453

And electrical conductor formation (i.e., metallization)

185
438/449

Dopant addition

134
438/450

Implanting through recessed oxide

109
438/451

Plural doping steps

131
438/443

Etchback of recessed oxide

199
438/440

Including nondopant implantation

95
438/452

Plural oxidation steps to form recessed oxide

116
438/444

Preliminary etching of groove

146
438/445

Masking of groove sidewall

144
438/447

Dopant addition

65
438/446

Polysilicon containing sidewall

47
438/448

Utilizing oxidation mask having polysilicon component

144
438/441

With electrolytic treatment step

21
438/442

With epitaxial semiconductor layer formation

123
438/404

Total dielectric isolation

276
438/411

Air isolation (e.g., beam lead supported semiconductor islands, etc.)

117
438/412

Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

154
438/405

And separate partially isolated semiconductor regions

133
438/406

Bonding of plural semiconductive substrates

340
438/410

Encroachment of separate locally oxidized regions

60
438/407

Nondopant implantation

177
438/408

With electrolytic treatment step

35
438/409

Porous semiconductor formation

120
438/413

With epitaxial semiconductor formation

156
438/478

Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition)

360
438/482

Amorphous semiconductor

342
438/486

And subsequent crystallization

546
438/487

Utilizing wave energy (e.g., laser, electron beam, etc.)

521
438/483

Compound semiconductor

193
438/485

Deposition utilizing plasma (e.g., glow discharge, etc.)

278
438/484

Running length (e.g., sheet, strip, etc.)

65
438/503

Fluid growth from gaseous state combined with preceding diverse operation

134
438/504

Differential etching

96
438/505

Doping of semiconductor

64
438/506

Ion implantation

75
438/507

Fluid growth from gaseous state combined with subsequent diverse operation

174
438/508

Doping of semiconductor

101
438/509

Heat treatment

164
438/497

Fluid growth from liquid combined with preceding diverse operation

41
438/498

Differential etching

25
438/499

Doping of semiconductor

24
438/500

Fluid growth from liquid combined with subsequent diverse operation

50
438/501

Doping of semiconductor

39
438/502

Heat treatment

70
438/492

Fluid growth step with preceding and subsequent diverse operation

171
438/479

On insulating substrate or layer

622
438/480

Including implantation of ion which reacts with semiconductor substrate to form insulating layer

100
438/481

Utilizing epitaxial lateral overgrowth

313
438/493

Plural fluid growth steps with intervening diverse operation

61
438/496

Coating of semiconductive substrate with nonsemiconductive material

38
438/494

Differential etching

112
438/495

Doping of semiconductor

46
438/488

Polycrystalline semiconductor

445
438/491

And subsequent doping of polycrystalline semiconductor

91
438/490

Running length (e.g., sheet, strip, etc.)

55
438/489

Simultaneous single crystal formation

140
438/309

Forming bipolar transistor by formation or alteration of semiconductive active regions

363
438/322

Complementary bipolar transistors

139
438/323

Having common active region (i.e., integrated injection logic (i2l), etc.)

39
438/325

Having lateral bipolar transistor

75
438/324

Including additional electrical device

41
438/327

Having lateral bipolar transistor

47
438/326

Including additional electrical device

39
438/351

Direct application of electrical current

11
438/346

Emitter dip prevention or utilization

8
438/350

Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)

154
438/334

Forming inverted transistor structure

35
438/335

Forming lateral transistor structure

68
438/337

Active region formed along groove or exposed edge in semiconductor

48
438/336

Combined with vertical bipolar transistor

45
438/338

Having multiple emitter or collector structure

32
438/339

Self-aligned

81
438/352

Fusion or solidification of semiconductor region

8
438/310

Gettering of semiconductor substrate

53
438/333

Having fuse or integral short

60
438/312