| Class Number |
Class Name |
No. of Patents |
| 438/380 |
Avalanche diode manufacture (e.g., impatt, trappat, etc.) |
92 |
| 438/455 |
Bonding of plural semiconductor substrates |
969 |
| 438/456 |
Having enclosed cavity |
278 |
| 438/458 |
Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.) |
765 |
| 438/459 |
Thinning of semiconductor substrate |
839 |
| 438/457 |
Warping of semiconductor substrate |
102 |
| 438/932 |
Boron nitride semiconductor |
17 |
| 438/900 |
Bulk effect device making |
48 |
| 438/901 |
Capacitive junction |
28 |
| 438/902 |
Capping layer |
105 |
| 438/903 |
Catalyst aided deposition |
44 |
| 438/904 |
Charge carrier lifetime control |
60 |
| 438/689 |
Chemical etching |
654 |
| 438/705 |
Altering etchability of substrate region by compositional or crystalline modification |
340 |
| 438/694 |
Combined with coating step |
890 |
| 438/696 |
Coating of sidewall |
503 |
| 438/700 |
Formation of groove or trench |
1123 |
| 438/702 |
Plural coating steps |
626 |
| 438/701 |
Tapered configuration |
487 |
| 438/697 |
Planarization by etching and coating |
426 |
| 438/699 |
Plural coating steps |
396 |
| 438/698 |
Utilizing reflow |
109 |
| 438/703 |
Plural coating steps |
399 |
| 438/695 |
Simultaneous etching and coating |
391 |
| 438/690 |
Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) |
476 |
| 438/691 |
Combined mechanical and chemical material removal |
720 |
| 438/692 |
Simultaneous (e.g., chemical-mechanical polishing, etc.) |
2202 |
| 438/693 |
Utilizing particulate abradant |
854 |
| 438/704 |
Having liquid and vapor etching steps |
421 |
| 438/745 |
Liquid phase etching |
1137 |
| 438/754 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
383 |
| 438/755 |
Silicide |
48 |
| 438/752 |
Germanium |
96 |
| 438/748 |
Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant |
127 |
| 438/749 |
Sequential application of etchant |
149 |
| 438/750 |
To same side of substrate |
240 |
| 438/751 |
Each etch step exposes surface of an adjacent layer |
142 |
| 438/757 |
Silicon nitride |
214 |
| 438/756 |
Silicon oxide |
420 |
| 438/753 |
Silicon |
422 |
| 438/746 |
Utilizing electromagnetic or wave energy |
84 |
| 438/747 |
With relative movement between substrate and confined pool of etchant |
140 |
| 438/706 |
Vapor phase etching (i.e., dry etching) |
1296 |
| 438/735 |
Differential etching of semiconductor substrate |
235 |
| 438/737 |
Substrate possessing multiple layers |
184 |
| 438/742 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
253 |
| 438/738 |
Selectively etching substrate possessing multiple layers of differing etch characteristics |
598 |
| 438/739 |
Lateral etching of intermediate layer (i.e., undercutting) |
270 |
| 438/740 |
Utilizing etch stop layer |
351 |
| 438/741 |
Pn junction functions as etch stop |
14 |
| 438/744 |
Silicon nitride |
199 |
| 438/743 |
Silicon oxide or glass |
406 |
| 438/736 |
Utilizing multilayered mask |
254 |
| 438/734 |
Sequential etching steps on a single layer |
508 |
| 438/707 |
Utilizing electromagnetic or wave energy |
164 |
| 438/710 |
By creating electric field (e.g., plasma, glow discharge, etc.) |
1155 |
| 438/718 |
Compound semiconductor |
174 |
| 438/720 |
Electrically conductive material (e.g., metal, conductive oxide, etc.) |
828 |
| 438/721 |
Silicide |
176 |
| 438/713 |
Forming tapered profile (e.g., tapered etching, etc.) |
304 |
| 438/726 |
Having microwave gas energizing |
65 |
| 438/727 |
Producing energized gas remotely located from substrate |
63 |
| 438/728 |
Using magnet (e.g., electron cyclotron resonance, etc.) |
56 |
| 438/714 |
Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.) |
946 |
| 438/722 |
Metal oxide |
141 |
| 438/725 |
Organic material (e.g., resist, etc.) |
899 |
| 438/712 |
Reactive ion beam etching (i.e., ribe) |
583 |
| 438/724 |
Silicon nitride |
602 |
| 438/723 |
Silicon oxide or glass |
1061 |
| 438/719 |
Silicon |
695 |
| 438/732 |
Using magnet (e.g., electron cyclotron resonance, etc.) |
98 |
| 438/729 |
Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma |
215 |
| 438/730 |
Producing energized gas remotely located from substrate |
56 |
| 438/731 |
Using intervening shield structure |
42 |
| 438/717 |
Utilizing multilayered mask |
355 |
| 438/711 |
Utilizing multiple gas energizing means |
235 |
| 438/716 |
With substrate handling (e.g., conveying, etc.) |
153 |
| 438/715 |
With substrate heating or cooling |
317 |
| 438/708 |
Photo-induced etching |
202 |
| 438/709 |
Photo-induced plasma etching |
140 |
| 438/733 |
Using or orientation dependent etchant (i.e., anisotropic etchant) |
142 |
| 438/905 |
Cleaning of reaction chamber |
300 |
| 438/906 |
Cleaning of wafer as interim step |
500 |
| 438/758 |
Coating of substrate containing semiconductor region or of semiconductor substrate |
782 |
| 438/765 |
By reaction with substrate |
159 |
| 438/767 |
Compound semiconductor substrate |
133 |
| 438/766 |
Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.) |
302 |
| 438/768 |
Reaction with conductive region |
105 |
| 438/769 |
Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) |
257 |
| 438/775 |
Nitridation |
324 |
| 438/776 |
Using electromagnetic or wave energy |
94 |
| 438/777 |
Microwave gas energizing |
48 |
| 438/770 |
Oxidation |
556 |
| 438/774 |
In atmosphere containing halogen |
102 |
| 438/773 |
In atmosphere containing water vapor (i.e., wet oxidation) |
178 |
| 438/771 |
Using electromagnetic or wave energy |
122 |
| 438/772 |
Microwave gas energizing |
35 |
| 438/759 |
Combined with the removal of material by nonchemical means |
199 |
| 438/764 |
Formation of semi-insulative polycrystalline silicon |
107 |
| 438/778 |
Insulative material deposited upon semiconductive substrate |
1053 |
| 438/779 |
Compound semiconductor substrate |
123 |
| 438/780 |
Depositing organic material (e.g., polymer, etc.) |
906 |
| 438/781 |
Subsequent heating modifying organic coating composition |
505 |
| 438/783 |
Insulative material having impurity (e.g., for altering physical characteristics, etc.) |
339 |
| 438/784 |
Introduction simultaneous with deposition |
254 |
| 438/785 |
Insulative material is compound of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
568 |
| 438/791 |
Silicon nitride formation |
395 |
| 438/794 |
Organic reactant |
54 |
| 438/792 |
Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) |
258 |
| 438/793 |
Organic reactant |
49 |
| 438/787 |
Silicon oxide formation |
750 |
| 438/790 |
Organic reactant |
379 |
| 438/788 |
Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) |
542 |
| 438/789 |
Organic reactant |
351 |
| 438/786 |
Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) |
317 |
| 438/782 |
With substrate handling during coating (e.g., immersion, spinning, etc.) |
496 |
| 438/761 |
Multiple layers |
456 |
| 438/762 |
At least one layer formed by reaction with substrate |
273 |
| 438/763 |
Layers formed of diverse composition or by diverse coating processes |
860 |
| 438/760 |
Utilizing reflow (e.g., planarization, etc.) |
248 |
| 438/584 |
Coating with electrically or thermally conductive material |
380 |
| 438/585 |
Insulated gate formation |
912 |
| 438/586 |
Combined with formation of ohmic contact to semiconductor region |
984 |
| 438/590 |
Compound semiconductor |
92 |
| 438/587 |
Forming array of gate electrodes |
405 |
| 438/588 |
Plural gate levels |
228 |
| 438/591 |
Gate insulator structure constructed of plural layers or nonsilicon containing compound |
509 |
| 438/595 |
Having sidewall structure |
829 |
| 438/596 |
Portion of sidewall structure is conductive |
260 |
| 438/592 |
Possessing plural conductive layers (e.g., polycide) |
1149 |
| 438/593 |
Separated by insulator (i.e., floating gate) |
490 |
| 438/594 |
Tunnelling dielectric layer |
300 |
| 438/589 |
Recessed into semiconductor substrate |
451 |
| 438/597 |
To form ohmic contact to semiconductive material |
612 |
| 438/658 |
Altering composition of conductor |
266 |
| 438/659 |
Implantation of ion into conductor |
303 |
| 438/688 |
Aluminum or aluminum alloy conductor |
596 |
| 438/669 |
And patterning of conductive layer |
655 |
| 438/672 |
Plug formation (i.e., in viahole) |
1087 |
| 438/673 |
Tapered etching |
157 |
| 438/670 |
Utilizing lift-off |
170 |
| 438/671 |
Utilizing multilayered mask |
204 |
| 438/611 |
Beam lead formation |
169 |
| 438/610 |
Conductive macromolecular conductor (including metal powder filled composition) |
79 |
| 438/618 |
Contacting multiple semiconductive regions (i.e., interconnects) |
1085 |
| 438/619 |
Air bridge structure |
366 |
| 438/621 |
Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.) |
151 |
| 438/642 |
Diverse conductors |
188 |
| 438/643 |
At least one layer forms a diffusion barrier |
901 |
| 438/644 |
Having adhesion promoting layer |
279 |
| 438/647 |
Having electrically conductive polysilicon component |
268 |
| 438/650 |
Having noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
170 |
| 438/651 |
Silicide |
143 |
| 438/645 |
Having planarization step |
257 |
| 438/646 |
Utilizing reflow |
87 |
| 438/648 |
Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
795 |
| 438/649 |
Silicide |
507 |
| 438/620 |
Forming contacts of differing depths into semiconductor substrate |
270 |
| 438/622 |
Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) |
1585 |
| 438/625 |
At least one metallization level formed of diverse conductive layers |
389 |
| 438/627 |
At least one layer forms a diffusion barrier |
861 |
| 438/629 |
Diverse conductive layers limited to viahole/plug |
660 |
| 438/630 |
Silicide formation |
217 |
| 438/628 |
Having adhesion promoting layer |
274 |
| 438/626 |
Planarization |
552 |
| 438/631 |
Having planarization step |
644 |
| 438/633 |
Simultaneously by chemical and mechanical means |
769 |
| 438/634 |
Utilizing etch-stop layer |
439 |
| 438/632 |
Utilizing reflow |
183 |
| 438/623 |
Including organic insulating material between metal levels |
689 |
| 438/636 |
Including use of antireflective layer |
369 |
| 438/635 |
Insulator formed by reaction with conductor (e.g., oxidation, etc.) |
192 |
| 438/641 |
Selective deposition |
176 |
| 438/624 |
Separating insulating layer is laminate or composite of plural insulating materials |
1281 |
| 438/637 |
With formation of opening (i.e., viahole) in insulative layer |
2247 |
| 438/640 |
Having viahole of tapered shape |
427 |
| 438/639 |
Having viahole with sidewall component |
607 |
| 438/638 |
Having viaholes of diverse width |
823 |
| 438/687 |
Copper of copper alloy conductor |
1358 |
| 438/684 |
Electrically conductive polysilicon |
195 |
| 438/678 |
Electroless deposition of conductive layer |
444 |
| 438/679 |
Evaporative coating of conductive layer |
108 |
| 438/612 |
Forming solder contact or bonding pad |
1198 |
| 438/613 |
Bump electrode |
1119 |
| 438/615 |
Including fusion of conductor |
229 |
| 438/616 |
By transcription from auxiliary substrate |
114 |
| 438/617 |
By wire bonding |
307 |
| 438/614 |
Plural conductive layers |
654 |
| 438/660 |
Including heat treatment of conductive layer |
707 |
| 438/663 |
Rapid thermal anneal |
240 |
| 438/664 |
Forming silicide |
502 |
| 438/661 |
Subsequent fusing conductive layer |
127 |
| 438/662 |
Utilizing laser |
130 |
| 438/686 |
Noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) |
325 |
| 438/608 |
Oxidic conductor (e.g., indium tin oxide, etc.) |
120 |
| 438/609 |
Transparent conductor |
97 |
| 438/652 |
Plural layered electrode or conductor |
480 |
| 438/653 |
At least one layer forms a diffusion barrier |
1002 |
| 438/654 |
Having adhesion promoting layer |
322 |
| 438/657 |
Having electrically conductive polysilicon component |
291 |
| 438/656 |
Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
836 |
| 438/655 |
Silicide |
880 |
| 438/685 |
Refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
741 |
| 438/674 |
Selective deposition of conductive layer |
321 |
| 438/675 |
Plug formation (i.e., in viahole) |
719 |
| 438/677 |
Pretreatment of surface to enhance or retard deposition |
278 |
| 438/676 |
Utilizing electromagnetic or wave energy |
133 |
| 438/598 |
Selectively interconnecting (e.g., customization, wafer scale integration, etc.) |
299 |
| 438/600 |
Using structure alterable to conductive state (i.e., antifuse) |
256 |
| 438/601 |
Using structure alterable to nonconductive state (i.e., fuse) |
281 |
| 438/599 |
With electrical circuit layout |
192 |
| 438/682 |
Silicide |
610 |
| 438/683 |
Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
663 |
| 438/666 |
Specified configuration of electrode or contact |
602 |
| 438/667 |
Conductive feedthrough or through-hole in substrate |
313 |
| 438/668 |
Specified aspect ratio of conductor or viahole |
210 |
| 438/602 |
To compound semiconductor |
121 |
| 438/603 |
Ii-vi compound semiconductor |
68 |
| 438/604 |
Iii-v compound semiconductor |
191 |
| 438/606 |
Ga and as containing semiconductor |
161 |
| 438/605 |
Multilayer electrode |
132 |
| 438/680 |
Utilizing chemical vapor deposition (i.e., cvd) |
840 |
| 438/681 |
Of organo-metallic precursor (i.e., mocvd) |
403 |
| 438/665 |
Utilizing textured surface |
172 |
| 438/607 |
With epitaxial conductor formation |
134 |
| 438/907 |
Continuous processing |
119 |
| 438/908 |
Utilizing cluster apparatus |
90 |
| 438/909 |
Controlled atmosphere |
193 |
| 438/910 |
Controlling charging state at semiconductor-insulator interface |
132 |
| 438/911 |
Differential oxidation and etching |
141 |
| 438/466 |
Direct application of electrical current |
151 |
| 438/468 |
Electromigration |
52 |
| 438/470 |
Fusion of semiconductor region |
19 |
| 438/467 |
To alter conductivity of fuse or antifuse element |
210 |
| 438/469 |
Utilizing pulsed current |
27 |
| 438/912 |
Displacing pn junction |
10 |
| 438/913 |
Diverse treatments performed in unitary chamber |
96 |
| 438/914 |
Doping |
45 |
| 438/915 |
Amphoteric doping |
18 |
| 438/916 |
Autodoping control or utilization |
35 |
| 438/919 |
Compensation doping |
84 |
| 438/920 |
Controlling diffusion profile by oxidation |
55 |
| 438/917 |
Deep level dopants (e.g., gold (au), chromium (cr), iron (fe), nickel (ni), etc.) |
22 |
| 438/922 |
Diffusion along grain boundaries |
15 |
| 438/923 |
Diffusion through a layer |
76 |
| 438/925 |
Fluid growth doping control (e.g., delta doping, etc.) |
108 |
| 438/921 |
Nonselective diffusion |
5 |
| 438/918 |
Special or nonstandard dopant |
71 |
| 438/924 |
To facilitate selective etching |
84 |
| 438/926 |
Dummy metallization |
140 |
| 438/927 |
Electromigration resistant metallization |
83 |
| 438/20 |
Electron emitter manufacture |
360 |
| 438/929 |
Eutectic semiconductor |
18 |
| 438/400 |
Formation of electrically isolated lateral semiconductive structure |
192 |
| 438/402 |
And gettering of substrate |
72 |
| 438/454 |
Field plate electrode |
94 |
| 438/424 |
Grooved and refilled with deposited dielectric material |
1403 |
| 438/430 |
And deposition of polysilicon or noninsulative material into groove |
326 |
| 438/431 |
Oxidation of deposited material |
178 |
| 438/432 |
Nonoxidized portions remaining in groove after oxidation |
107 |
| 438/429 |
And epitaxial semiconductor formation in groove |
124 |
| 438/425 |
Combined with formation of recessed oxide by localized oxidation |
270 |
| 438/426 |
Recessed oxide laterally extending from groove |
222 |
| 438/433 |
Dopant addition |
239 |
| 438/434 |
From doped insulator in groove |
50 |
| 438/435 |
Multiple insulative layers in groove |
516 |
| 438/437 |
Conformal insulator formation |
355 |
| 438/436 |
Reflow of insulator |
78 |
| 438/427 |
Refilling multiple grooves of different widths or depths |
449 |
| 438/428 |
Reflow of insulator |
45 |
| 438/438 |
Reflow of insulator |
91 |
| 438/421 |
Having air-gap dielectric (e.g., groove, etc.) |
250 |
| 438/422 |
Enclosed cavity |
163 |
| 438/403 |
Having semi-insulating component |
93 |
| 438/401 |
Having substrate registration feature (e.g., alignment mark) |
513 |
| 438/423 |
Implanting to form insulator |
158 |
| 438/414 |
Isolation by pn junction only |
46 |
| 438/420 |
Plural doping steps |
77 |
| 438/415 |
Thermomigration |
29 |
| 438/416 |
With epitaxial semiconductor formation |
59 |
| 438/417 |
And simultaneous polycrystalline growth |
15 |
| 438/418 |
Dopant addition |
38 |
| 438/419 |
Plural doping steps |
81 |
| 438/439 |
Recessed oxide by localized oxidation (i.e., locos) |
312 |
| 438/453 |
And electrical conductor formation (i.e., metallization) |
185 |
| 438/449 |
Dopant addition |
134 |
| 438/450 |
Implanting through recessed oxide |
109 |
| 438/451 |
Plural doping steps |
131 |
| 438/443 |
Etchback of recessed oxide |
199 |
| 438/440 |
Including nondopant implantation |
95 |
| 438/452 |
Plural oxidation steps to form recessed oxide |
116 |
| 438/444 |
Preliminary etching of groove |
146 |
| 438/445 |
Masking of groove sidewall |
144 |
| 438/447 |
Dopant addition |
65 |
| 438/446 |
Polysilicon containing sidewall |
47 |
| 438/448 |
Utilizing oxidation mask having polysilicon component |
144 |
| 438/441 |
With electrolytic treatment step |
21 |
| 438/442 |
With epitaxial semiconductor layer formation |
123 |
| 438/404 |
Total dielectric isolation |
276 |
| 438/411 |
Air isolation (e.g., beam lead supported semiconductor islands, etc.) |
117 |
| 438/412 |
Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.) |
154 |
| 438/405 |
And separate partially isolated semiconductor regions |
133 |
| 438/406 |
Bonding of plural semiconductive substrates |
340 |
| 438/410 |
Encroachment of separate locally oxidized regions |
60 |
| 438/407 |
Nondopant implantation |
177 |
| 438/408 |
With electrolytic treatment step |
35 |
| 438/409 |
Porous semiconductor formation |
120 |
| 438/413 |
With epitaxial semiconductor formation |
156 |
| 438/478 |
Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) |
360 |
| 438/482 |
Amorphous semiconductor |
342 |
| 438/486 |
And subsequent crystallization |
546 |
| 438/487 |
Utilizing wave energy (e.g., laser, electron beam, etc.) |
521 |
| 438/483 |
Compound semiconductor |
193 |
| 438/485 |
Deposition utilizing plasma (e.g., glow discharge, etc.) |
278 |
| 438/484 |
Running length (e.g., sheet, strip, etc.) |
65 |
| 438/503 |
Fluid growth from gaseous state combined with preceding diverse operation |
134 |
| 438/504 |
Differential etching |
96 |
| 438/505 |
Doping of semiconductor |
64 |
| 438/506 |
Ion implantation |
75 |
| 438/507 |
Fluid growth from gaseous state combined with subsequent diverse operation |
174 |
| 438/508 |
Doping of semiconductor |
101 |
| 438/509 |
Heat treatment |
164 |
| 438/497 |
Fluid growth from liquid combined with preceding diverse operation |
41 |
| 438/498 |
Differential etching |
25 |
| 438/499 |
Doping of semiconductor |
24 |
| 438/500 |
Fluid growth from liquid combined with subsequent diverse operation |
50 |
| 438/501 |
Doping of semiconductor |
39 |
| 438/502 |
Heat treatment |
70 |
| 438/492 |
Fluid growth step with preceding and subsequent diverse operation |
171 |
| 438/479 |
On insulating substrate or layer |
622 |
| 438/480 |
Including implantation of ion which reacts with semiconductor substrate to form insulating layer |
100 |
| 438/481 |
Utilizing epitaxial lateral overgrowth |
313 |
| 438/493 |
Plural fluid growth steps with intervening diverse operation |
61 |
| 438/496 |
Coating of semiconductive substrate with nonsemiconductive material |
38 |
| 438/494 |
Differential etching |
112 |
| 438/495 |
Doping of semiconductor |
46 |
| 438/488 |
Polycrystalline semiconductor |
445 |
| 438/491 |
And subsequent doping of polycrystalline semiconductor |
91 |
| 438/490 |
Running length (e.g., sheet, strip, etc.) |
55 |
| 438/489 |
Simultaneous single crystal formation |
140 |
| 438/309 |
Forming bipolar transistor by formation or alteration of semiconductive active regions |
363 |
| 438/322 |
Complementary bipolar transistors |
139 |
| 438/323 |
Having common active region (i.e., integrated injection logic (i2l), etc.) |
39 |
| 438/325 |
Having lateral bipolar transistor |
75 |
| 438/324 |
Including additional electrical device |
41 |
| 438/327 |
Having lateral bipolar transistor |
47 |
| 438/326 |
Including additional electrical device |
39 |
| 438/351 |
Direct application of electrical current |
11 |
| 438/346 |
Emitter dip prevention or utilization |
8 |
| 438/350 |
Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.) |
154 |
| 438/334 |
Forming inverted transistor structure |
35 |
| 438/335 |
Forming lateral transistor structure |
68 |
| 438/337 |
Active region formed along groove or exposed edge in semiconductor |
48 |
| 438/336 |
Combined with vertical bipolar transistor |
45 |
| 438/338 |
Having multiple emitter or collector structure |
32 |
| 438/339 |
Self-aligned |
81 |
| 438/352 |
Fusion or solidification of semiconductor region |
8 |
| 438/310 |
Gettering of semiconductor substrate |
53 |
| 438/333 |
Having fuse or integral short |
60 |
| 438/312 |
|
