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Class Information
Number: 420/903
Name: Alloys or metallic compositions > Semiconductive
Description: Cross-reference art collection alloys, or metallic composition whose resistivity at room temperature is in the range of 10-2
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6617583 |
Inventory control |
Sep. 9, 2003 |
| 6340535 |
Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device |
Jan. 22, 2002 |
| 6207844 |
Compounds and methods for depositing pure thin films of gallium nitride semiconductor |
Mar. 27, 2001 |
| 6110829 |
Ultra-low temperature Al fill for sub-0.25 .mu.m generation of ICs using an Al-Ge-Cu alloy |
Aug. 29, 2000 |
| 5628933 |
Transparent conductors comprising zinc-indium-oxide and methods for making films |
May. 13, 1997 |
| 5474591 |
Method of synthesizing III-V semiconductor nanocrystals |
Dec. 12, 1995 |
| 5458865 |
Electrical components formed of lanthanide chalcogenides and method of preparation |
Oct. 17, 1995 |
| 5175056 |
Galvanically compatible conductive filler |
Dec. 29, 1992 |
| 4775425 |
P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same |
Oct. 4, 1988 |
| 4764212 |
Thermoelectric material for low temperature use and method of manufacturing the same |
Aug. 16, 1988 |
| 4600801 |
Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
Jul. 15, 1986 |
| 4522663 |
Method for optimizing photoresponsive amorphous alloys and devices |
Jun. 11, 1985 |
| 4499331 |
Amorphous semiconductor and amorphous silicon photovoltaic device |
Feb. 12, 1985 |
| 4478654 |
Amorphous silicon carbide method |
Oct. 23, 1984 |
| 4462959 |
HgCdTe Bulk doping technique |
Jul. 31, 1984 |
| 4447393 |
Oxide-free CdTe synthesis |
May. 8, 1984 |
| 4419151 |
Crystal and germanium modification and process for its preparation |
Dec. 6, 1983 |
| 4415531 |
Semiconductor materials |
Nov. 15, 1983 |
| 4324842 |
Superconducting wire with improved strain characteristics |
Apr. 13, 1982 |
| 4317680 |
Diffusion source and method of preparing |
Mar. 2, 1982 |
| 4238232 |
Metallic modified material of intermetallic compound |
Dec. 9, 1980 |
| 4229231 |
Method of forming a laminated ribbon structure |
Oct. 21, 1980 |
| 4213781 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Jul. 22, 1980 |
| 4170471 |
Silver alloys for metallization of magnetic bubble domain devices |
Oct. 9, 1979 |
| 4124410 |
Silicon solar cells with low-cost substrates |
Nov. 7, 1978 |
| 4119704 |
Process for making gallium arsenide or phosphide |
Oct. 10, 1978 |
| 4116725 |
Heat treatment of cadmium mercury telluride and product |
Sep. 26, 1978 |
| 4093704 |
Method for synthesis of III-V compounds |
Jun. 6, 1978 |
| 4087294 |
Lithium doped mercury cadmium telluride |
May. 2, 1978 |
| 4086106 |
Halogen-doped Hg,Cd,Te |
Apr. 25, 1978 |
| 4063210 |
Temperature independent semiconductor resistor and method of making same |
Dec. 13, 1977 |
| 4003741 |
Method of preparation of semiconducting compounds |
Jan. 18, 1977 |
| 3991163 |
Process for the production of III-V compounds |
Nov. 9, 1976 |
| 3979271 |
Deposition of solid semiconductor compositions and novel semiconductor materials |
Sep. 7, 1976 |
| 3966881 |
Method of making a single crystal intermetallic compound semiconductor |
Jun. 29, 1976 |
| 3957954 |
High-temperature reaction method for producing group II-VI or a group III-V compound |
May. 18, 1976 |
| 3957693 |
Process for producing selenium homogeneously doped with tellurium |
May. 18, 1976 |
| 3947549 |
Preparation of indium phosphide |
Mar. 30, 1976 |
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