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Class Information
Number: 376/183
Name: Induced nuclear reactions: processes, systems, and elements > Nuclear transmutation (e.g., by means of particle or wave energy) > By neutron bombardment > Doping of semiconductors
Description: Subject matter wherein the material is a semiconductor which contains an element which is converted to a desired dopant by the neutron bombardment.










Patents under this class:

Patent Number Title Of Patent Date Issued
8363775 Doping of semiconductor materials by nuclear transmutation Jan. 29, 2013
6493411 Method for producing formed bodies of high temperature superconductors having high critical currents Dec. 10, 2002
5324331 Transport system, in particular for transporting silicon monocrystals through the tank of a research reactor Jun. 28, 1994
4910156 Neutron transmutation doping of a silicon wafer Mar. 20, 1990
4766482 Semiconductor device and method of making the same Aug. 23, 1988
4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation Aug. 4, 1987
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4506436 Method for increasing the radiation resistance of charge storage semiconductor devices Mar. 26, 1985
4479829 Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation Oct. 30, 1984
4348351 Method for producing neutron doped silicon having controlled dopant variation Sep. 7, 1982
4277307 Method of restoring Si crystal lattice order after neutron irradiation Jul. 7, 1981
4275405 Semiconductor timing device with radioactive material at the floating gate electrode of an insulated-gate field-effect transistor Jun. 23, 1981
4260448 Process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment Apr. 7, 1981
4240844 Reducing the switching time of semiconductor devices by neutron irradiation Dec. 23, 1980
4234355 Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing Nov. 18, 1980
4135951 Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials Jan. 23, 1979
4129463 Polycrystalline silicon semiconducting material by nuclear transmutation doping Dec. 12, 1978
4126509 Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal Nov. 21, 1978
4119441 Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction Oct. 10, 1978
4048508 Apparatus for doping a semiconductor crystalline rod Sep. 13, 1977
4042454 Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation Aug. 16, 1977
4027051 Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation May. 31, 1977
4025365 Method of producing homogeneously doped p-conductive semiconductor materials May. 24, 1977
4013485 Process for eliminating undesirable charge centers in MIS devices Mar. 22, 1977
3967982 Method of doping a semiconductor layer Jul. 6, 1976











 
 
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