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Class Information
Number: 372/45.012
Name: Coherent light generators > Particular active media > Semiconductor > Injection > Particular confinement layer > With superlattice structure
Description: Subject matter wherein the layer consists of a series of alternating epitaxial layers of two types of material, each layer having a thickness below a critical thickness.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8704248 Coupled asymmetric quantum confinement structures Apr. 22, 2014
8679876 Laser diode and method for fabricating same Mar. 25, 2014
8681830 Interband cascade laser amplifier medium Mar. 25, 2014
8675702 Laser module Mar. 18, 2014
8644358 Highly power-efficient and broadband quantum cascade lasers Feb. 4, 2014
8638829 Semiconductor laser Jan. 28, 2014
8571081 Semiconductor light-emitting device Oct. 29, 2013
8558257 Coupled asymmetric quantum confinement structures Oct. 15, 2013
8514904 Nitride semiconductor laser diode Aug. 20, 2013
8514902 P-type isolation between QCL regions Aug. 20, 2013
8416825 Optical device structure using GaN substrates and growth structure for laser applications Apr. 9, 2013
8405065 LED semiconductor body Mar. 26, 2013
8367450 Light emitting system and method of fabricating and using the same Feb. 5, 2013
8363687 Vertical cavity surface emitting laser Jan. 29, 2013
8358673 Strain balanced laser diode Jan. 22, 2013
8355422 Enhanced planarity in GaN edge emitting lasers Jan. 15, 2013
8325774 High power, high efficiency quantum cascade lasers with reduced electron leakage Dec. 4, 2012
8306081 High indium containing InGaN substrates for long wavelength optical devices Nov. 6, 2012
8284805 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors Oct. 9, 2012
8218595 Enhanced planarity in GaN edge emitting lasers Jul. 10, 2012
8218221 Indium rich InGaN LED line monitor Jul. 10, 2012
8213476 Integration of a terahertz quantum cascade laser with a hollow waveguide Jul. 3, 2012
8189639 GaN-based laser diodes with misfit dislocations displaced from the active region May. 29, 2012
8160116 Semiconductor laser and method for manufacturing the same Apr. 17, 2012
8126024 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater Feb. 28, 2012
8121165 MQW laser structure comprising plural MQW regions Feb. 21, 2012
8111726 Semiconductor laser device Feb. 7, 2012
8098701 Quantum cascade laser element Jan. 17, 2012
8068528 Quantum cascade laser Nov. 29, 2011
8050305 Semiconductor device Nov. 1, 2011
8050304 Group-III nitride based laser diode and method for fabricating same Nov. 1, 2011
8014430 Quantum cascade laser Sep. 6, 2011
8000367 High-efficiency unipolar quantum cascade laser Aug. 16, 2011
7974324 Surface-emitting laser device Jul. 5, 2011
7974322 Nitride semiconductor laser diode Jul. 5, 2011
7965752 Native green laser semiconductor devices Jun. 21, 2011
7957442 Semiconductor optical device Jun. 7, 2011
7953134 Semiconductor light-emitting device May. 31, 2011
7935956 Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers May. 3, 2011
7915607 Nitride semiconductor device Mar. 29, 2011
7912104 Semiconductor laser diode Mar. 22, 2011
7899104 EL semiconductor device Mar. 1, 2011
7893424 Semiconductor layer structure with superlattice Feb. 22, 2011
7885307 Vertical-cavity surface-emitting semiconductor laser device Feb. 8, 2011
7867798 Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system Jan. 11, 2011
7859745 Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element Dec. 28, 2010
7860140 Light-emitting device with double intermediate layers between mesa stripe and iron-doped current blocking layer Dec. 28, 2010
7856042 High efficiency intersubband semiconductor lasers Dec. 21, 2010
7856046 Surface emitting laser diode including grating layer Dec. 21, 2010
7848376 Quantum cascade laser structure Dec. 7, 2010

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