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Class Information
Number: 372/44.011
Name: Coherent light generators > Particular active media > Semiconductor > Injection > Crystal orientation
Description: Subject matter wherein the semiconductor includes a layer that has a predetermined angle with respect to an edge or a facet at which a crystal is sliced.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8711891 Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus Apr. 29, 2014
8693515 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Apr. 8, 2014
8654808 Nitride semiconductor laser element and method for manufacturing same Feb. 18, 2014
8594145 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Nov. 26, 2013
8588260 Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers Nov. 19, 2013
8582617 Semiconductor laser Nov. 12, 2013
8548020 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Oct. 1, 2013
8548021 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser Oct. 1, 2013
8546167 Gallium nitride-based compound semiconductor light-emitting element Oct. 1, 2013
8541869 Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates Sep. 24, 2013
8514904 Nitride semiconductor laser diode Aug. 20, 2013
8494017 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods Jul. 23, 2013
8488643 Photonic-crystal surface emitting laser, laser array using the laser, and image forming apparatus using the laser array Jul. 16, 2013
8488642 Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium n Jul. 16, 2013
8483251 Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode Jul. 9, 2013
8472491 Semiconductor laser device Jun. 25, 2013
8442084 High performance vertically emitting lasers May. 14, 2013
RE44215 Semiconductor optoelectric device and method of manufacturing the same May. 14, 2013
8422525 Optical device structure using miscut GaN substrates for laser applications Apr. 16, 2013
8420419 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Apr. 16, 2013
8405066 Nitride-based semiconductor light-emitting device Mar. 26, 2013
8401048 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device Mar. 19, 2013
8395106 Optical semiconductor device with quantum dots having configurational anisotropy Mar. 12, 2013
8391330 Fracture resistant metallization pattern for semiconductor lasers Mar. 5, 2013
8391327 Group III nitride semiconductor element and epitaxial wafer Mar. 5, 2013
8389312 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device Mar. 5, 2013
8385375 P-element doped laser medium apparatus and method Feb. 26, 2013
8378463 Orientation of electronic devices on mis-cut substrates Feb. 19, 2013
8363686 Temperature control device for optoelectronic devices Jan. 29, 2013
8361885 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove Jan. 29, 2013
8355418 Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates Jan. 15, 2013
8355422 Enhanced planarity in GaN edge emitting lasers Jan. 15, 2013
8351478 Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates Jan. 8, 2013
8306081 High indium containing InGaN substrates for long wavelength optical devices Nov. 6, 2012
8306082 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device Nov. 6, 2012
8294179 Optical device structure using GaN substrates and growth structures for laser applications Oct. 23, 2012
8284811 Gallium nitride-based semiconductor laser diode Oct. 9, 2012
8284810 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods Oct. 9, 2012
8259769 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates Sep. 4, 2012
8228963 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer Jul. 24, 2012
8218595 Enhanced planarity in GaN edge emitting lasers Jul. 10, 2012
8189633 Polycrystalline transparent ceramic articles and method of making same May. 29, 2012
8189639 GaN-based laser diodes with misfit dislocations displaced from the active region May. 29, 2012
8139619 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Mar. 20, 2012
8111725 Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus Feb. 7, 2012
8111724 Temperature control device for optoelectronic devices Feb. 7, 2012
8107507 Group III nitride semiconductor element and epitaxial wafer Jan. 31, 2012
8102891 Nitride semiconductor laser element Jan. 24, 2012
8098700 Single-exciton nanocrystal laser Jan. 17, 2012
8077751 Bar-shaped semiconductor laser chip and method of fabrication thereof Dec. 13, 2011

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