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Class Information
Number: 365/46
Name: Static information storage and retrieval > Analog storage systems > Resistive
Description: Subject matter where the storage element is resistive.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619936 |
System that prevents reduction in data retention |
Nov. 17, 2009 |
| 7613028 |
Solid electrolyte switching element |
Nov. 3, 2009 |
| 7613029 |
Phase change memory and method for driving the same |
Nov. 3, 2009 |
| 7606064 |
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
Oct. 20, 2009 |
| 7579611 |
Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide |
Aug. 25, 2009 |
| 7569909 |
Phase change memory devices and methods for manufacturing the same |
Aug. 4, 2009 |
| 7564731 |
Software refreshed memory device and method |
Jul. 21, 2009 |
| 7548449 |
Magnetic memory device and methods thereof |
Jun. 16, 2009 |
| 7515455 |
High density memory array for low power application |
Apr. 7, 2009 |
| 7508695 |
Nonvolatile semiconductor memory device and data writing method |
Mar. 24, 2009 |
| 7474552 |
Integrated semiconductor memory device |
Jan. 6, 2009 |
| 7474555 |
Integrated circuit including resistivity changing material element |
Jan. 6, 2009 |
| 7468906 |
Word driver and decode design methodology in MRAM circuit |
Dec. 23, 2008 |
| 7463506 |
Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
Dec. 9, 2008 |
| 7447056 |
Method for using a multi-use memory cell and memory array |
Nov. 4, 2008 |
| 7440303 |
Semiconductor memory device |
Oct. 21, 2008 |
| 7440339 |
Stacked columnar 1T-nMTj MRAM structure and its method of formation and operation |
Oct. 21, 2008 |
| 7423902 |
Storage device and semiconductor apparatus |
Sep. 9, 2008 |
| 7423897 |
Method of operating a programmable resistance memory array |
Sep. 9, 2008 |
| 7397681 |
Nonvolatile memory devices having enhanced bit line and/or word line driving capability |
Jul. 8, 2008 |
| 7391642 |
Multilevel programming of phase change memory cells |
Jun. 24, 2008 |
| 7354793 |
Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
Apr. 8, 2008 |
| 7348209 |
Resistance variable memory device and method of fabrication |
Mar. 25, 2008 |
| 7339811 |
Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation |
Mar. 4, 2008 |
| 7335907 |
Memory device |
Feb. 26, 2008 |
| 7286378 |
Serial transistor-cell array architecture |
Oct. 23, 2007 |
| 7209378 |
Columnar 1T-N memory cell structure |
Apr. 24, 2007 |
| 7184297 |
Semiconductor memory device |
Feb. 27, 2007 |
| 7149100 |
Serial transistor-cell array architecture |
Dec. 12, 2006 |
| 7123498 |
Non-volatile memory device |
Oct. 17, 2006 |
| 7106618 |
Method of driving a non-volatile memory |
Sep. 12, 2006 |
| 7064970 |
Serial transistor-cell array architecture |
Jun. 20, 2006 |
| 7035141 |
Diode array architecture for addressing nanoscale resistive memory arrays |
Apr. 25, 2006 |
| 7023743 |
Stacked columnar 1T-nMTJ structure and its method of formation and operation |
Apr. 4, 2006 |
| 7009901 |
System and method for sensing data stored in a resistive memory element using one bit of a digital count |
Mar. 7, 2006 |
| 6992922 |
Cross point memory array exhibiting a characteristic hysteresis |
Jan. 31, 2006 |
| 6940740 |
Multilevel semiconductor memory device and method for driving the same as a neuron element in a neural network computer |
Sep. 6, 2005 |
| 6882553 |
Stacked columnar resistive memory structure and its method of formation and operation |
Apr. 19, 2005 |
| 6850429 |
Cross point memory array with memory plugs exhibiting a characteristic hysteresis |
Feb. 1, 2005 |
| 6813208 |
System and method for sensing data stored in a resistive memory element using one bit of a digital count |
Nov. 2, 2004 |
| 6785154 |
MRAM and access method thereof |
Aug. 31, 2004 |
| 6759249 |
Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
Jul. 6, 2004 |
| 6636433 |
Electronic device and recording method using the same |
Oct. 21, 2003 |
| 6483734 |
Memory device having memory cells capable of four states |
Nov. 19, 2002 |
| 5541869 |
Resistive memory element |
Jul. 30, 1996 |
| 5446684 |
Storage medium, storage method and stored information reading method |
Aug. 29, 1995 |
| 5289402 |
Recording medium, recording method, and readout method |
Feb. 22, 1994 |
| 4668932 |
Nonvolatile reprogrammable electronic potentiometer |
May. 26, 1987 |
| 4271486 |
Waveform storage system |
Jun. 2, 1981 |
| 3947828 |
Analog memory system using a temperature sensitive device |
Mar. 30, 1976 |
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