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Class Information
Number: 365/185.32
Name: Static information storage and retrieval > Floating gate > Particular biasing > Erase > Nonsubstrate discharge > Radiation erasure
Description: Subject matter under 185.31 wherein electromagnetic wave energy is used to erase an electric charge on the floating gate.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7342834 |
Data storage having injected hot carriers and erasable when selectively exposed to ambient light radiation |
Mar. 11, 2008 |
| 7218555 |
Imaging cell that has a long integration period and method of operating the imaging cell |
May. 15, 2007 |
| 7087182 |
Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen |
Aug. 8, 2006 |
| 6970386 |
Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light |
Nov. 29, 2005 |
| 6882574 |
Single poly UV-erasable programmable read only memory |
Apr. 19, 2005 |
| 6580630 |
Initialization method of P-type silicon nitride read only memory |
Jun. 17, 2003 |
| 6437398 |
One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory |
Aug. 20, 2002 |
| 6313502 |
Semiconductor device comprising a non-volatile memory which is erasable by means of UV irradiation |
Nov. 6, 2001 |
| 6249456 |
Secured EEPROM memory comprising means for the detection of erasure by ultraviolet radiation |
Jun. 19, 2001 |
| 6178119 |
Method of erasing a non-volatile memory |
Jan. 23, 2001 |
| 6034889 |
Electrically erasable and programmable non-volatile memory having a protectable zone and an electronic system including the memory |
Mar. 7, 2000 |
| 5969993 |
Method of restoring data in non-volatile semiconductor memory |
Oct. 19, 1999 |
| 5656521 |
Method of erasing UPROM transistors |
Aug. 12, 1997 |
| 5654921 |
Non-volatile memory device equipped with means to electrically erase data |
Aug. 5, 1997 |
| 5592416 |
Electronic storage circuit |
Jan. 7, 1997 |
| 5541878 |
Writable analog reference voltage storage device |
Jul. 30, 1996 |
| 5455785 |
Many time programmable memory card with ultraviolet erasable memory |
Oct. 3, 1995 |
| 5386388 |
Single cell reference scheme for flash memory sensing and program state verification |
Jan. 31, 1995 |
| 5343434 |
Nonvolatile semiconductor memory device and manufacturing method and testing method thereof |
Aug. 30, 1994 |
| 5270969 |
Electrically programmable nonvolatile semiconductor memory device with nand cell structure |
Dec. 14, 1993 |
| 5262987 |
Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation |
Nov. 16, 1993 |
| 5255219 |
Ultraviolet-erasable type nonvolatile semiconductor memory device having asymmetrical field oxide structure |
Oct. 19, 1993 |
| 5243559 |
Semiconductor memory device |
Sep. 7, 1993 |
| 5237530 |
Frasable non-volatile semiconductor memory device having read/write test function |
Aug. 17, 1993 |
| 5235541 |
Integrated circuit entirely protected against ultraviolet rays |
Aug. 10, 1993 |
| 5229972 |
Nonvolatile semiconductor memory system |
Jul. 20, 1993 |
| 5198998 |
Erasable programmable read only memory |
Mar. 30, 1993 |
| 5197029 |
Common-line connection for integrated memory array |
Mar. 23, 1993 |
| 5191551 |
Non-volatile semiconductor memory device with transistor paralleling floating gate transistor |
Mar. 2, 1993 |
| 5111257 |
Electronic integrated circuit having an electrode layer for element isolation |
May. 5, 1992 |
| 5109187 |
CMOS voltage reference |
Apr. 28, 1992 |
| 5058062 |
Nonvolatile semiconductor memory circuit including a reliable sense amplifier |
Oct. 15, 1991 |
| 5049758 |
Adaptable CMOS winner-take all circuit |
Sep. 17, 1991 |
| 5043946 |
Semiconductor memory device |
Aug. 27, 1991 |
| 5040036 |
Trench-isolated self-aligned split-gate EEPROM transistor and memory array |
Aug. 13, 1991 |
| 5034786 |
Opaque cover for preventing erasure of an EPROM |
Jul. 23, 1991 |
| 5021999 |
Non-volatile semiconductor memory device with facility of storing tri-level data |
Jun. 4, 1991 |
| 5020030 |
Nonvolatile SNOS memory cell with induced capacitor |
May. 28, 1991 |
| 5018104 |
Redundant circuit incorporated in semiconductor memory device |
May. 21, 1991 |
| 5016217 |
Logic cell array using CMOS EPROM cells having reduced chip surface area |
May. 14, 1991 |
| 5008856 |
Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
Apr. 16, 1991 |
| 4964143 |
EPROM element employing self-aligning process |
Oct. 16, 1990 |
| 4963769 |
Circuit for selective power-down of unused circuitry |
Oct. 16, 1990 |
| 4962484 |
Non-volatile memory device |
Oct. 9, 1990 |
| 4953928 |
MOS device for long-term learning |
Sep. 4, 1990 |
| 4947378 |
Memory element exchange control circuit capable of automatically refreshing a defective address |
Aug. 7, 1990 |
| 4943948 |
Program check for a non-volatile memory |
Jul. 24, 1990 |
| 4935702 |
Subthreshold CMOS amplifier with offset adaptation |
Jun. 19, 1990 |
| 4920512 |
Non-volatile semiconductor memory capable of readily erasing data |
Apr. 24, 1990 |
| 4897815 |
High-speed write type nonvolatile semiconductor memory |
Jan. 30, 1990 |
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