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Class Information
Number: 365/185.22
Name: Static information storage and retrieval > Floating gate > Particular biasing > Reference signal (e.g., dummy cell) > Verify signal
Description: Subject matter under 185.2 including the use of any circuitry, procedure, or other means to verify that the data signal has been properly written or erased from a memory cell.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7630256 |
Erase operation in a flash drive memory |
Dec. 8, 2009 |
| 7630255 |
Method for erasing data of NAND flash memory device |
Dec. 8, 2009 |
| 7630246 |
Programming rate identification and control in a solid state memory |
Dec. 8, 2009 |
| RE41021 |
Multi-state EEPROM having write-verify control circuit |
Dec. 1, 2009 |
| RE41020 |
Multi-state EEPROM having write-verify control circuit |
Dec. 1, 2009 |
| RE41019 |
Multi-state EEPROM having write-verify control circuit |
Dec. 1, 2009 |
| 7626868 |
Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM) |
Dec. 1, 2009 |
| 7623390 |
Programming method for non-volatile memory and non-volatile memory-based programmable logic device |
Nov. 24, 2009 |
| 7623388 |
Method for detecting erroneous word lines of a memory array and device thereof |
Nov. 24, 2009 |
| 7623377 |
Flash memory device having single page buffer structure and related programming operations |
Nov. 24, 2009 |
| 7623374 |
Non-volatile memory devices and methods of programming the same |
Nov. 24, 2009 |
| 7619938 |
Repairing advanced-memory buffer (AMB) with redundant memory buffer for repairing DRAM on a fully-buffered memory-module |
Nov. 17, 2009 |
| 7619934 |
Method and apparatus for adaptive memory cell overerase compensation |
Nov. 17, 2009 |
| 7619932 |
Algorithm for charge loss reduction and Vt distribution improvement |
Nov. 17, 2009 |
| 7619931 |
Program-verify method with different read and verify pass-through voltages |
Nov. 17, 2009 |
| 7619930 |
Dynamic verify based on threshold voltage distribution |
Nov. 17, 2009 |
| 7619925 |
Virtual ground array memory and programming method thereof |
Nov. 17, 2009 |
| 7619922 |
Method for non-volatile memory with background data latch caching during erase operations |
Nov. 17, 2009 |
| 7616499 |
Retention margin program verification |
Nov. 10, 2009 |
| 7616496 |
Charge trap type non-volatile memory device and program method thereof |
Nov. 10, 2009 |
| 7616481 |
Memories with alternate sensing techniques |
Nov. 10, 2009 |
| 7613046 |
Nonvolatile semiconductor memory device carrying out simultaneous programming of memory cells |
Nov. 3, 2009 |
| 7609560 |
Sensing of memory cells in a solid state memory device by fixed discharge of a bit line |
Oct. 27, 2009 |
| 7609557 |
Non-volatile memory cell read failure reduction |
Oct. 27, 2009 |
| 7609556 |
Non-volatile memory with improved program-verify operations |
Oct. 27, 2009 |
| 7609552 |
Non-volatile memory with background data latch caching during erase operations |
Oct. 27, 2009 |
| 7609548 |
Method of programming a multi level cell |
Oct. 27, 2009 |
| 7606100 |
Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
Oct. 20, 2009 |
| 7606084 |
Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory |
Oct. 20, 2009 |
| 7606080 |
Erase verifying method of NAND flash memory device |
Oct. 20, 2009 |
| 7606079 |
Reducing power consumption during read operations in non-volatile storage |
Oct. 20, 2009 |
| 7606078 |
Method for programming of memory cells, in particular of the flash type, and corresponding programming architecture |
Oct. 20, 2009 |
| 7606077 |
Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
Oct. 20, 2009 |
| 7606072 |
Non-volatile storage with compensation for source voltage drop |
Oct. 20, 2009 |
| 7606071 |
Compensating source voltage drop in non-volatile storage |
Oct. 20, 2009 |
| 7602652 |
Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory |
Oct. 13, 2009 |
| 7602650 |
Flash memory device and method for programming multi-level cells in the same |
Oct. 13, 2009 |
| 7599225 |
Method of programming and erasing a non-volatile memory array |
Oct. 6, 2009 |
| 7599224 |
Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
Oct. 6, 2009 |
| 7599223 |
Non-volatile memory with linear estimation of initial programming voltage |
Oct. 6, 2009 |
| 7599222 |
Semiconductor memory device using pipelined-buffer programming and related method |
Oct. 6, 2009 |
| 7599219 |
Flash memory devices that support incremental step-pulse programming using nonuniform verify time intervals |
Oct. 6, 2009 |
| 7596037 |
Independent bi-directional margin control per level and independently expandable reference cell levels for flash memory sensing |
Sep. 29, 2009 |
| 7596036 |
Memory control circuit, microcomputer, and data rewriting method |
Sep. 29, 2009 |
| 7596031 |
Faster programming of highest multi-level state for non-volatile memory |
Sep. 29, 2009 |
| 7593267 |
Method of writing data to a semiconductor memory device |
Sep. 22, 2009 |
| 7593266 |
Semiconductor memory device and method of verifying the same |
Sep. 22, 2009 |
| 7593265 |
Low noise sense amplifier array and method for nonvolatile memory |
Sep. 22, 2009 |
| 7593260 |
Semiconductor memory device for storing multivalued data |
Sep. 22, 2009 |
| 7590007 |
Nonvolatile semiconductor memory device |
Sep. 15, 2009 |
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