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Class Information
Number: 365/185.02
Name: Static information storage and retrieval > Floating gate > Disturbance control
Description: Subject matter under 185.01 wherein a threshold shifting effect is minimized from erasing, reading, and/or programming of a specific memory cell on any adjacent memory cells in the floating gate array.


Patents under this class:
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Patent Number Title Of Patent Date Issued
7630236 Flash memory programming to reduce program disturb Dec. 8, 2009
7630256 Erase operation in a flash drive memory Dec. 8, 2009
7630260 Semiconductor memory and system Dec. 8, 2009
7623387 Non-volatile storage with early source-side boosting for reducing program disturb Nov. 24, 2009
7623386 Reducing program disturb in non-volatile storage using early source-side boosting Nov. 24, 2009
7619933 Reducing effects of program disturb in a memory device Nov. 17, 2009
7616490 Programming non-volatile memory with dual voltage select gate structure Nov. 10, 2009
7616501 Method for reducing charge loss in analog floating gate cell Nov. 10, 2009
7616480 System that compensates for coupling based on sensing a neighbor using coupling Nov. 10, 2009
7616479 Data writing method for flash memories Nov. 10, 2009
7613042 Decoding system capable of reducing sector select area overhead for flash memory Nov. 3, 2009
7606079 Reducing power consumption during read operations in non-volatile storage Oct. 20, 2009
7602646 Threshold evaluation of EPROM cells Oct. 13, 2009
7596028 Variable program and program verification methods for a virtual ground memory in easing buried drain contacts Sep. 29, 2009
7596019 Non-volatile memory device and method of preventing hot electron program disturb phenomenon Sep. 29, 2009
7593249 Memory device for protecting memory cells during programming Sep. 22, 2009
7593265 Low noise sense amplifier array and method for nonvolatile memory Sep. 22, 2009
7593264 Method and apparatus for programming nonvolatile memory Sep. 22, 2009
7593258 Protection of the flow of a program executed by an integrated circuit or of data contained in this circuit Sep. 22, 2009
7590002 Resistance sensing and compensation for non-volatile storage Sep. 15, 2009
7589996 Method for programming a flash memory device Sep. 15, 2009
7583535 Biasing non-volatile storage to compensate for temperature variations Sep. 1, 2009
7580280 Method and apparatus for a non-volatile memory device with reduced program disturb Aug. 25, 2009
7577026 Source and drain side early boosting using local self boosting for non-volatile storage Aug. 18, 2009
7573773 Flash memory with data refresh triggered by controlled scrub data reads Aug. 11, 2009
7567460 Method of programming flash memory device Jul. 28, 2009
7567455 Method and system for programming non-volatile memory cells based on programming of proximate memory cells Jul. 28, 2009
7561469 Programming method to reduce word line to word line breakdown for NAND flash Jul. 14, 2009
7561473 System for performing data pattern sensitivity compensation using different voltage Jul. 14, 2009
7558141 Memory system, semiconductor memory device and method of driving same Jul. 7, 2009
7558148 Memory controller Jul. 7, 2009
7558107 Non volatile memory Jul. 7, 2009
7552273 Memory circuit and method for writing into a target memory area Jun. 23, 2009
7542336 Architecture and method for NAND flash memory Jun. 2, 2009
7535767 Reading multi-cell memory devices utilizing complementary bit information May. 19, 2009
7529126 Nonvolatile memory device and semiconductor device May. 5, 2009
7518931 Method of monitoring an erase threshold voltage distribution in a NAND flash memory device Apr. 14, 2009
7518909 Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods Apr. 14, 2009
7518908 EEPROM array and method for operation thereof Apr. 14, 2009
7515464 Synchronization of operations in distinct memory partitions Apr. 7, 2009
7515478 CMOS logic compatible non-volatile memory cell structure, operation, and array configuration Apr. 7, 2009
7515463 Reducing the impact of program disturb during read Apr. 7, 2009
7511995 Self-boosting system with suppression of high lateral electric fields Mar. 31, 2009
7511996 Flash memory program inhibit scheme Mar. 31, 2009
7508703 Non-volatile memory with boost structures Mar. 24, 2009
7508704 Non-volatile semiconductor storage system Mar. 24, 2009
7508710 Operating non-volatile memory with boost structures Mar. 24, 2009
7505337 Method and apparatus for repairing a shorted tunnel device Mar. 17, 2009
7505312 Nonvolatile semiconductor memory device capable of controlling proximity effect due to coupling between adjacent charge storage layers Mar. 17, 2009
7506113 Method for configuring compensation Mar. 17, 2009

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