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Class Information
Number: 365/171
Name: Static information storage and retrieval > Systems using particular element > Magnetic thin film
Description: Subject matter where the storage element is a thin film cell which has a thickness of approximately 1 to 12,000 angstroms.

Sub-classes under this class:

Class Number Class Name Patents
365/172 Isotropic 66
365/173 Multiple magnetic storage layers 1,610

Patents under this class:

Patent Number Title Of Patent Date Issued
8711613 Non-volatile flash-RAM memory with magnetic memory Apr. 29, 2014
8711612 Memory circuit and method of forming the same using reduced mask steps Apr. 29, 2014
8711600 High density molecular memory storage with read and write capabilities Apr. 29, 2014
8710604 Magnetoresistive element and manufacturing method of the same Apr. 29, 2014
8709617 Magnetic memory element, driving method for same, and nonvolatile storage device Apr. 29, 2014
8693239 Memory element and memory device Apr. 8, 2014
8687415 Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces Apr. 1, 2014
8687414 Magnetic memory element and magnetic random access memory Apr. 1, 2014
8687413 Magnetic memory with phonon glass electron crystal material Apr. 1, 2014
8686524 Magnetic stack with oxide to reduce switching current Apr. 1, 2014
8686523 Magnetoresistive device Apr. 1, 2014
8686520 Spin-torque magnetoresistive structures Apr. 1, 2014
8681542 Magnetic memory devices and methods of operating the same Mar. 25, 2014
8681541 Magnetic memory with separate read and write paths Mar. 25, 2014
8681539 STRAM with composite free magnetic element Mar. 25, 2014
8681538 Semiconductor storage device Mar. 25, 2014
8679653 Spin-valve recording element and storage device Mar. 25, 2014
8675401 Spin-transfer torque memory self-reference read method Mar. 18, 2014
8675400 Magnetic memory Mar. 18, 2014
8675399 Magnetic unit and magnetic storage device Mar. 18, 2014
8675386 Memory device having resistance unit Mar. 18, 2014
8670271 Magnetic stack having assist layers Mar. 11, 2014
8670269 Resistive memory device and method of writing data using multi-mode switching current Mar. 11, 2014
8670268 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8670267 Data storage methods and devices Mar. 11, 2014
8670266 Non-volatile flip-flop Mar. 11, 2014
8665640 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling Mar. 4, 2014
8665638 MRAM sensing with magnetically annealed reference cell Mar. 4, 2014
8665629 Condensed memory cell structure using a FinFET Mar. 4, 2014
8659938 Multibit magnetic random access memory cell with improved read margin Feb. 25, 2014
8659933 Hereto resistive switching material layer in RRAM device and method Feb. 25, 2014
8654577 Shared bit line SMT MRAM array with shunting transistors between bit lines Feb. 18, 2014
8654576 Spin valve element, method of driving the same, and storage device using the same Feb. 18, 2014
8653615 MR device with synthetic free layer structure Feb. 18, 2014
8649214 Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof Feb. 11, 2014
8649212 Method, apparatus and system to determine access information for a phase change memory Feb. 11, 2014
8648401 Domain wall assisted spin torque transfer magnetresistive random access memory structure Feb. 11, 2014
8644063 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions Feb. 4, 2014
8644060 Method of sensing data of a magnetic random access memories (MRAM) Feb. 4, 2014
8644058 Spin-injection element, and magnetic field sensor and magnetic recording memory employing the same Feb. 4, 2014
8644055 Nonvolatile memory with enhanced efficiency to address asymetric NVM cells Feb. 4, 2014
8642358 Method for fabricating magnetic tunnel junction device Feb. 4, 2014
8638601 Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces Jan. 28, 2014
8638597 Bit line charge accumulation sensing for resistive changing memory Jan. 28, 2014
8638590 Resistance based memory having two-diode access device Jan. 28, 2014
8634238 Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof Jan. 21, 2014
8634237 Magnetic memory device Jan. 21, 2014
8634234 Embedded magnetic random access memory (MRAM) Jan. 21, 2014
8634232 Write driver circuit for MRAM, MRAM and layout structure thereof Jan. 21, 2014
8634231 Magnetic tunnel junction structure Jan. 21, 2014

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