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Class Information
Number: 365/158
Name: Static information storage and retrieval > Systems using particular element > Magnetoresistive
Description: Subject matter in which the storage element changes in electrical conductivity when a magnetic field is applied.










Patents under this class:

Patent Number Title Of Patent Date Issued
8711646 Architecture, system and method for testing resistive type memory Apr. 29, 2014
8711631 Management of memory array with magnetic random access memory (MRAM) Apr. 29, 2014
8711613 Non-volatile flash-RAM memory with magnetic memory Apr. 29, 2014
8711612 Memory circuit and method of forming the same using reduced mask steps Apr. 29, 2014
8711609 Nonvolatile memory device Apr. 29, 2014
8711608 Memory with separate read and write paths Apr. 29, 2014
8711602 Semiconductor memory device Apr. 29, 2014
8710604 Magnetoresistive element and manufacturing method of the same Apr. 29, 2014
8710602 Method and system for providing magnetic junctions having improved characteristics Apr. 29, 2014
8709617 Magnetic memory element, driving method for same, and nonvolatile storage device Apr. 29, 2014
8705270 Semiconductor memory Apr. 22, 2014
8705269 Magnetoresistive element and magnetic memory Apr. 22, 2014
8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Apr. 22, 2014
8693273 Reference averaging for MRAM sense amplifiers Apr. 8, 2014
8693240 Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulses Apr. 8, 2014
8693239 Memory element and memory device Apr. 8, 2014
8693238 MRAM having variable word line drive potential Apr. 8, 2014
8693233 Re-writable resistance-switching memory with balanced series stack Apr. 8, 2014
8687415 Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces Apr. 1, 2014
8687414 Magnetic memory element and magnetic random access memory Apr. 1, 2014
8687413 Magnetic memory with phonon glass electron crystal material Apr. 1, 2014
8687412 Reference cell configuration for sensing resistance states of MRAM bit cells Apr. 1, 2014
8687401 Ferro-resistive random access memory (Ferro-RRAM), operation method and manufacturing method thereof Apr. 1, 2014
8686524 Magnetic stack with oxide to reduce switching current Apr. 1, 2014
8686520 Spin-torque magnetoresistive structures Apr. 1, 2014
8686392 Semiconductor device Apr. 1, 2014
8681542 Magnetic memory devices and methods of operating the same Mar. 25, 2014
8681539 STRAM with composite free magnetic element Mar. 25, 2014
8681538 Semiconductor storage device Mar. 25, 2014
8681537 Nonvolatile memory apparatus having magnetoresistive memory elements and method for driving the same Mar. 25, 2014
8681536 Magnetic tunnel junction (MTJ) on planarized electrode Mar. 25, 2014
8681535 Nonvolatile latch circuit Mar. 25, 2014
8680632 Magnetoresistive element and magnetic memory Mar. 25, 2014
8679653 Spin-valve recording element and storage device Mar. 25, 2014
8675401 Spin-transfer torque memory self-reference read method Mar. 18, 2014
8675400 Magnetic memory Mar. 18, 2014
8675399 Magnetic unit and magnetic storage device Mar. 18, 2014
8675386 Memory device having resistance unit Mar. 18, 2014
8675384 Circuit for concurrent read operation and method therefor Mar. 18, 2014
8674465 MRAM device and integration techniques compatible with logic integration Mar. 18, 2014
8670276 Host-managed logical mass storage device using magnetic random access memory (MRAM) Mar. 11, 2014
8670269 Resistive memory device and method of writing data using multi-mode switching current Mar. 11, 2014
8670268 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8670267 Data storage methods and devices Mar. 11, 2014
8670266 Non-volatile flip-flop Mar. 11, 2014
8670264 Multi-port magnetic random access memory (MRAM) Mar. 11, 2014
8669628 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8665640 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling Mar. 4, 2014
8665639 Magnetoresistive element and magnetic memory Mar. 4, 2014
8665638 MRAM sensing with magnetically annealed reference cell Mar. 4, 2014











 
 
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