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Class Information
Number: 365/148
Name: Static information storage and retrieval > Systems using particular element > Resistive
Description: Subject matter in which the storage element is an electrically resistive member.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8233309 Non-volatile memory array architecture incorporating 1T-1R near 4F.sup.2 memory cell Jul. 31, 2012
8233308 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Jul. 31, 2012
8228724 Semiconductor device Jul. 24, 2012
8228723 Adaptive wordline programming bias of a phase change memory Jul. 24, 2012
8228722 Reducing temporal changes in phase change memories Jul. 24, 2012
8228721 Refresh circuitry for phase change memory Jul. 24, 2012
8228719 Thin film input/output Jul. 24, 2012
8228717 Spin current generator for STT-MRAM or other spintronics applications Jul. 24, 2012
8228715 Structures and methods for a field-reset spin-torque MRAM Jul. 24, 2012
8228714 Memory device for resistance-based memory applications Jul. 24, 2012
8228712 Nonvolatile semiconductor memory device Jul. 24, 2012
8228711 Bi-directional resistive memory devices and related memory systems and methods of writing data Jul. 24, 2012
8228710 Resistance change memory device Jul. 24, 2012
8228709 Resistance variable memory device and system Jul. 24, 2012
8228706 Magnetic shift register memory device Jul. 24, 2012
8227872 Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode Jul. 24, 2012
8227788 Nonvolatile memory element, and nonvolatile memory device Jul. 24, 2012
8227786 Nonvolatile memory element Jul. 24, 2012
8227782 Resistance change element and method of manufacturing the same Jul. 24, 2012
8223580 Method and apparatus for decoding memory Jul. 17, 2012
8223565 Resistance change memory with current control and voltage control during a write operation, and write method of the same Jul. 17, 2012
8223539 GCIB-treated resistive device Jul. 17, 2012
8223538 Semiconductor phast change memory using multiple phase change layers Jul. 17, 2012
8223537 State machine sensing of memory cells Jul. 17, 2012
8223536 Semiconductor memory device Jul. 17, 2012
8223531 Semiconductor device and driving method of the same Jul. 17, 2012
8223530 Variable-resistance memory device and its operation method Jul. 17, 2012
8223529 Resistive memory devices, memory systems and methods of controlling input and output operations of the same Jul. 17, 2012
8223528 Control method for memory cell Jul. 17, 2012
8223527 Semiconductor device having memory array, method of writing, and systems associated therewith Jul. 17, 2012
8222713 Storage element and storage apparatus Jul. 17, 2012
8222704 Compact electrical switching devices with nanotube elements, and methods of making same Jul. 17, 2012
8222075 Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same Jul. 17, 2012
8218362 Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same Jul. 10, 2012
8218360 Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices Jul. 10, 2012
8218350 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same Jul. 10, 2012
8218349 Non-volatile logic devices using magnetic tunnel junctions Jul. 10, 2012
8217490 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same Jul. 10, 2012
8213259 Non-volatile memory cell with resistive sense element block erase and uni-directional write Jul. 3, 2012
8213224 High density low power nanowire phase change material memory device Jul. 3, 2012
8213223 Multi-level memory devices and methods of operating the same Jul. 3, 2012
8213221 Magnetic shielding in magnetic multilayer structures Jul. 3, 2012
8213218 Optimized solid electrolyte for programmable metallization cell devices and structures Jul. 3, 2012
8213217 Microelectronic programmable device and methods of forming and programming the same Jul. 3, 2012
8213216 Shared bit line and source line resistive sense memory structure Jul. 3, 2012
8213215 Resistive sense memory calibration for self-reference read method Jul. 3, 2012
8213214 Storage device and information rerecording method Jul. 3, 2012
8213213 Reference current generator for resistance type memory and method thereof Jul. 3, 2012
8213211 High reliability OTP memory Jul. 3, 2012
8212232 Resistance changing device and method for fabricating the same Jul. 3, 2012

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