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Class Information
Number: 365/148
Name: Static information storage and retrieval > Systems using particular element > Resistive
Description: Subject matter in which the storage element is an electrically resistive member.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8315079 Circuit for concurrent read operation and method therefor Nov. 20, 2012
8310892 Capacitive discharge method for writing to non-volatile memory Nov. 13, 2012
8310887 Semiconductor device having single-ended sensing amplifier Nov. 13, 2012
8310865 Semiconductor memory device having diode cell structure Nov. 13, 2012
8310864 Self-aligned bit line under word line memory array Nov. 13, 2012
8310862 Magnetoresistive effect element and magnetic memory Nov. 13, 2012
8310858 Nonvolatile semiconductor memory device with no decrease in read margin and method of reading the same Nov. 13, 2012
8310857 Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof Nov. 13, 2012
8310252 Testing a nonvolatile circuit element having multiple intermediate states Nov. 13, 2012
8309166 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same Nov. 13, 2012
8305801 Magnetoresistive element and magnetic memory Nov. 6, 2012
8305800 Method for fabricating a phase-change memory cell Nov. 6, 2012
8305797 Information recording/reproducing device Nov. 6, 2012
8305796 Access signal adjustment circuits and methods for memory cells in a cross-point array Nov. 6, 2012
8305795 Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device Nov. 6, 2012
8305794 Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM.sub.4x.sub.8 type with an electronic data rewritable non volatile memory, and corresponding material Nov. 6, 2012
8305793 Integrated circuit with an array of resistance changing memory cells Nov. 6, 2012
8304754 Metal oxide materials and electrodes for Re-RAM Nov. 6, 2012
8300465 Semiconductor and flash memory systems Oct. 30, 2012
8300449 Resistive random access memory and verifying method thereof Oct. 30, 2012
8300448 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device Oct. 30, 2012
8300445 Nanowire and memory device using it as a medium for current-induced domain wall displacement Oct. 30, 2012
8299450 Non-volatile memory device including phase-change material Oct. 30, 2012
8295081 Forced ion migration for chalcogenide phase change memory device Oct. 23, 2012
8295080 Solid-state memory device, data processing system, and data processing device Oct. 23, 2012
8295077 Semiconductor memory device Oct. 23, 2012
8295076 Variable resistance memory devices compensating for word line resistance Oct. 23, 2012
8295075 Resistive memory and method for controlling operations of the same Oct. 23, 2012
8295074 Memory cell Oct. 23, 2012
8295073 Non-volatile dual port third dimensional memory Oct. 23, 2012
8294488 Programmable impedance element circuits and methods Oct. 23, 2012
8293600 Thermally stabilized electrode structure Oct. 23, 2012
8289764 Semiconductor device Oct. 16, 2012
8289763 Memory arrays Oct. 16, 2012
8289762 Double-pulse write for phase change memory Oct. 16, 2012
8289761 Nonvolatile memory cell, nonvolatile memory device and method for driving the same Oct. 16, 2012
8289757 Embedded magnetic random access memory (MRAM) Oct. 16, 2012
8289752 Asymmetric write current compensation using gate overdrive for resistive sense memory cells Oct. 16, 2012
8289751 Non-volatile memory cell with programmable unipolar switching element Oct. 16, 2012
8289750 Semiconductor memory device featuring selective data storage in a stacked memory cell structure Oct. 16, 2012
8289749 Soft forming reversible resistivity-switching element for bipolar switching Oct. 16, 2012
8289748 Tuning a variable resistance of a resistive sense element Oct. 16, 2012
8289747 Non-volatile memory device and method of operating the same Oct. 16, 2012
8288297 Atomic layer deposition of metal oxide materials for memory applications Oct. 16, 2012
8284596 Integrated circuit including an array of diodes coupled to a layer of resistance changing material Oct. 9, 2012
8284594 Magnetic devices and structures Oct. 9, 2012
8284589 Single device driver circuit to control three-dimensional memory element array Oct. 9, 2012
8279664 Phase change memory device, memory system, and programming method using variable verification pulses Oct. 2, 2012
8279662 Multi-bit magnetic memory with independently programmable free layer domains Oct. 2, 2012
8279658 Method of programming variable resistance element and nonvolatile storage device Oct. 2, 2012

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