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Class Information
Number: 365/148
Name: Static information storage and retrieval > Systems using particular element > Resistive
Description: Subject matter in which the storage element is an electrically resistive member.


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
7623370 Resistance change memory device Nov. 24, 2009
RE40995 Multi-element resistive memory Nov. 24, 2009
7622731 Cross-point memory array Nov. 24, 2009
7619936 System that prevents reduction in data retention Nov. 17, 2009
7619915 Resistive random access memory device Nov. 17, 2009
7619917 Memory cell with trigger element Nov. 17, 2009
7616515 Integrated electronic device having a low voltage electric supply Nov. 10, 2009
7616474 Offset compensated sensing for magnetic random access memory Nov. 10, 2009
7616473 Devices and methods for controlling active termination resistors in a memory system Nov. 10, 2009
7616472 Method and apparatus for non-volatile multi-bit memory Nov. 10, 2009
7613047 Efficient circuit and method to measure resistance thresholds Nov. 3, 2009
7613037 Phase-change memory device and method of fabricating the same Nov. 3, 2009
7613033 Magnetic storage device Nov. 3, 2009
7613029 Phase change memory and method for driving the same Nov. 3, 2009
7612360 Non-volatile memory devices having cell diodes Nov. 3, 2009
7612359 Microelectronic devices using sacrificial layers and structures fabricated by same Nov. 3, 2009
7613028 Solid electrolyte switching element Nov. 3, 2009
7609577 Design structure for improving sensing margin of electrically programmable fuses Oct. 27, 2009
7609543 Method and implementation of stress test for MRAM Oct. 27, 2009
7609545 Semiconductor device Oct. 27, 2009
7606096 Semiconductor integrated circuit device Oct. 20, 2009
7606086 Nonvolatile semiconductor memory device Oct. 20, 2009
7606064 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device Oct. 20, 2009
7606059 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array Oct. 20, 2009
7606056 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured Oct. 20, 2009
7602631 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Oct. 13, 2009
7602632 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Oct. 13, 2009
7602633 Non-volatile memory device, method of manufacturing the same, and method of operating the same Oct. 13, 2009
7599217 Memory cell device and manufacturing method Oct. 6, 2009
7599211 Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit Oct. 6, 2009
7599210 Nonvolatile memory cell, storage device and nonvolatile logic circuit Oct. 6, 2009
7599209 Memory circuit including a resistive memory element and method for operating such a memory circuit Oct. 6, 2009
7596016 Optically accessible phase change memory Sep. 29, 2009
7593255 Integrated circuit for programming a memory element Sep. 22, 2009
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states Sep. 8, 2009
7586777 Resistance variable memory with temperature tolerant materials Sep. 8, 2009
7586776 Nonvolatile memory devices having multi-filament variable resistivity memory cells therein Sep. 8, 2009
7586775 Nonvolatile memory device and related method of operation Sep. 8, 2009
7583525 Method of driving storage device Sep. 1, 2009
7580278 Variable resistance memory device Aug. 25, 2009
7580277 Memory device including a programmable resistance element Aug. 25, 2009
7580276 Nonvolatile memory element Aug. 25, 2009
7580275 Control of a memory matrix with resistance hysteresis elements Aug. 25, 2009
7579611 Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide Aug. 25, 2009
7577044 Resistive memory element sensing using averaging Aug. 18, 2009
7577024 Streaming mode programming in phase change memories Aug. 18, 2009
7577023 Memory including write circuit for providing multiple reset pulses Aug. 18, 2009
7577022 Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage Aug. 18, 2009
7577021 Spin transfer MRAM device with separated CPP assisted writing Aug. 18, 2009
7577020 System and method for reading multiple magnetic tunnel junctions with a single select transistor Aug. 18, 2009

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