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Class Information
Number: 365/131
Name: Static information storage and retrieval > Systems using particular element > Two magnetic cells per bit
Description: Subject matter where two magnetic elements are used to store a single bit of information.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7378698 |
Magnetic tunnel junction and memory device including the same |
May. 27, 2008 |
| 7269061 |
Magnetic memory |
Sep. 11, 2007 |
| 7154799 |
Semiconductor memory with single cell and twin cell refreshing |
Dec. 26, 2006 |
| 6992938 |
Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell |
Jan. 31, 2006 |
| 6847548 |
Memory with multiple state cells and sensing method |
Jan. 25, 2005 |
| 6339550 |
Soft error immune dynamic random access memory |
Jan. 15, 2002 |
| 6011725 |
Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
Jan. 4, 2000 |
| 5699293 |
Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device |
Dec. 16, 1997 |
| 5545477 |
Magneto-optical recording medium |
Aug. 13, 1996 |
| 5200963 |
Self-checking on-line testable static ram |
Apr. 6, 1993 |
| 4805146 |
Soft write apparatus and method for nondestructive readout core memory |
Feb. 14, 1989 |
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