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Class Information
Number: 365/113
Name: Static information storage and retrieval > Radiant energy > Amorphous
Description: Subject matter wherein the storage material can be changed from a crystalline (ordered) structure to an amorphous (disordered) structure by means of radiant energy.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8687406 Semiconductor memory device and method of controlling the same Apr. 1, 2014
8675402 Nonvolatile memory cell, nonvolatile memory device and method for driving the same Mar. 18, 2014
8611133 Stateful negative differential resistance devices Dec. 17, 2013
8595449 Memory scheduler for managing maintenance operations in a resistive memory in response to a trigger condition Nov. 26, 2013
8570796 Nonvolatile memory cell, nonvolatile memory device and method for driving the same Oct. 29, 2013
8531884 Memory device, systems and devices including a memory device, methods of operating a memory device, and/or methods of operating systems and devices including a memory device Sep. 10, 2013
8526258 Variable resistance memory device and related method of operation Sep. 3, 2013
8498147 Nonvolatile memory cell, nonvolatile memory device and method for driving the same Jul. 30, 2013
8416608 Multilevel phase change memory operation Apr. 9, 2013
8400867 Non-volatile memory with stray magnetic field compensation Mar. 19, 2013
8379438 Electronic device, and method of operating an electronic device Feb. 19, 2013
8379441 Variable resistance memory and memory system including the same Feb. 19, 2013
8351240 Phase change memory device having multi-level and method of driving the same Jan. 8, 2013
8335099 Optical memory device and method therefor Dec. 18, 2012
8331127 Nonvolatile memory device having a transistor connected in parallel with a resistance switching device Dec. 11, 2012
8320154 Switching element and application of the same Nov. 27, 2012
8289761 Nonvolatile memory cell, nonvolatile memory device and method for driving the same Oct. 16, 2012
8270205 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same Sep. 18, 2012
8218350 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same Jul. 10, 2012
8213224 High density low power nanowire phase change material memory device Jul. 3, 2012
8213217 Microelectronic programmable device and methods of forming and programming the same Jul. 3, 2012
8213218 Optimized solid electrolyte for programmable metallization cell devices and structures Jul. 3, 2012
8198158 Method for thin film memory Jun. 12, 2012
8159867 Phase change memory devices and systems, and related programming methods Apr. 17, 2012
8143610 Semiconductor phase-change memory device Mar. 27, 2012
8116115 Multilevel phase change memory operation Feb. 14, 2012
8093632 Phase change memory device accounting for volume change of phase change material and method for manufacturing the same Jan. 10, 2012
8085585 Semiconductor memory device Dec. 27, 2011
8053753 Thin film logic circuitry Nov. 8, 2011
8027188 Semiconductor memory device Sep. 27, 2011
8018760 Resistance variable element and resistance variable memory apparatus Sep. 13, 2011
8018761 Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus Sep. 13, 2011
8014188 Electric element, switching element, memory element, switching method and memory method Sep. 6, 2011
7936578 Read only memory cell for storing a multiple bit value May. 3, 2011
7929331 Microelectronic programmable device and methods of forming and programming the same Apr. 19, 2011
7920414 Asymmetric-threshold three-terminal switching device Apr. 5, 2011
7916524 Program method with locally optimized write parameters Mar. 29, 2011
7888665 Integrated circuit including memory cell having cup-shaped electrode interface Feb. 15, 2011
7884345 Phase-change material, memory unit and method for electrically storing/reading data Feb. 8, 2011
7839673 Thin-film memory system having thin-film peripheral circuit and memory controller for interfacing with a standalone thin-film memory Nov. 23, 2010
7786462 Chalcogenide devices exhibiting stable operation from the as-fabricated state Aug. 31, 2010
7778069 Semiconductor device and its fabrication method Aug. 17, 2010
7706168 Erase, programming and leakage characteristics of a resistive memory device Apr. 27, 2010
7692959 Multilayer storage class memory using externally heated phase change material Apr. 6, 2010
7675766 Microelectric programmable device and methods of forming and programming the same Mar. 9, 2010
7672156 Phase change random access memory device Mar. 2, 2010
7660152 Method and apparatus for implementing self-referencing read operation for PCRAM devices Feb. 9, 2010
7609563 Simultaneous read circuit for multiple memory cells Oct. 27, 2009
7596016 Optically accessible phase change memory Sep. 29, 2009
7580278 Variable resistance memory device Aug. 25, 2009

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