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Class Information
Number: 365
Name: Static information storage and retrieval >
Description: This is the generic class for apparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.










Class Number Class Name No. of Patents
365/230.01

Addressing

1140
365/238.5

Byte or page addressing

523
365/238

Cartesian memories

74
365/230.09

Combined random and sequential addressing

310
365/236

Counting

849
365/242

Current steering

65
365/243

Diode

59
365/237

Electron beam

22
365/243.5

Including magnetic element

59
365/230.08

Including particular address buffer or latch circuit arrangement

2037
365/230.05

Multiple port access

1254
365/230.02

Multiplexing

836
365/234

Optical

95
365/235

Page memories

104
365/230.06

Particular decoder or driver circuit

4702
365/230.07

Including magnetic element

51
365/230.03

Plural blocks or banks

4904
365/230.04

Alternate addressing (e.g., even/odd)

491
365/239

Sequential

467
365/241

Detectors

66
365/240

Using shift register

300
365/233

Sync/clocking

3081
365/233.5

Transition detection

813
365/231

Using selective matrix

104
365/232

Magnetic

53
365/45

Analog storage systems

259
365/48

Magnetic

47
365/46

Resistive

129
365/47

Thermoplastic

4
365/49

Associative memories

1168
365/50

Magnetic

70
365/185.01

Floating gate

820
365/185.04

Data security

364
365/185.02

Disturbance control

751
365/185.03

Multiple values (e.g., analog)

2313
365/185.18

Particular biasing

3686
365/185.23

Drive circuitry (e.g., word line driver)

1536
365/185.29

Erase

2296
365/185.33

Flash

2210
365/185.31

Nonsubstrate discharge

100
365/185.32

Radiation erasure

87
365/185.3

Over erasure

487
365/185.26

Floating electrode (e.g., source, control gate, drain)

900
365/185.25

Line charging (e.g., precharge, discharge, refresh)

1095
365/185.19

Multiple pulses (e.g., ramp)

1096
365/185.2

Reference signal (e.g., dummy cell)

1261
365/185.21

Sensing circuitry (e.g., current mirror)

1689
365/185.22

Verify signal

2171
365/185.27

Substrate bias

696
365/185.24

Threshold setting (e.g., conditioning)

1767
365/185.28

Tunnel programming

1520
365/185.05

Particular connection

1266
365/185.11

Bank or block architecture

1978
365/185.13

Global word or bit lines

554
365/185.12

Parallel row lines (e.g., page mode)

900
365/185.07

Cross-coupled cell

198
365/185.09

Error correction (e.g., redundancy, endurance)

1334
365/185.1

Extended floating gate

364
365/185.17

Logic connection (e.g., nand string)

2308
365/185.14

Program gate

660
365/185.15

Weak inversion injection

142
365/185.06

Segregated columns

244
365/185.16

Virtual ground

365
365/185.08

With volatile signal storage device

634
365/51

Format or disposition of elements

1892
365/52

Hardware for storage elements

494
365/54

Ground plane

22
365/55

Magnetic

121
365/60

Air gap

5
365/59

Embedded conductor

9
365/61

Hairpin conductor

7
365/57

Keeper

10
365/62

Permanent magnet

17
365/58

Slot

7
365/56

Spacers

11
365/53

Shields

109
365/120

Information masking

98
365/123

Bragg cells

9
365/124

Diffraction

50
365/125

Holograms

164
365/128

Electron beams

36
365/121

Polarization

65
365/122

Magneto-optical

246
365/126

Thermoplastic

64
365/127

Transparency

98
365/63

Interconnection arrangements

3180
365/65

Ferroelectric

212
365/66

Magnetic

220
365/69

Crossover

104
365/67

Plural diagonal

6
365/68

Tree

11
365/70

Woven

7
365/71

Negative resistance

23
365/64

Optical

80
365/72

Transistors or diodes

488
365/1

Magnetic bubbles

135
365/27

Bias

32
365/28

Variable

22
365/19

Conductor propagation

44
365/20

Including a.c. signal

12
365/21

Three phase signals

4
365/4

Decoder

23
365/7

Detectors

30
365/9

Hall effect

24
365/8

Magnetoresistive

99
365/10

Optical

48
365/31

Different size bubbles

9
365/2

Disposition of elements

117
365/3

Lattice

38
365/11

Generators

33
365/12

By splitting

119
365/35

Guide structure

17
365/36

Ion implantation

126
365/39

Overlays

73
365/43

Chevrons

77
365/41

Dots

43
365/40

On opposite sides of storage medium

6
365/44

Rectangular bars

12
365/42

Wedges

11
365/37

Slots or rails

43
365/38

Zigzag

11
365/30

In-plane field (nonrotating)

24
365/5

Logic

22
365/33

Magnetic storage material

106
365/34

Amorphous

49
365/32

Multiple magnetic layer

59
365/22

One's and zero's

17
365/23

Plural direction propagation

15
365/24

Nonsequential

10
365/13

Plural interacting paths

22
365/18

Boundary

4
365/14

Closed loop

26
365/15

Major-minor

158
365/16

With switch at interacting point

39
365/17

Idler switch

17
365/6

Rotating field circuits

42
365/29

Strip domain

55
365/25

Velocity

14
365/26

Turns

15
365/80

Magnetic shift registers

68
365/81

Bidirectional

49
365/85

Continuous

11
365/86

Plated wire

2
365/84

Core in transfer loop

2
365/93

Including delay means

12
365/89

Logic

4
365/90

Multiaperture cell

5
365/91

Ladder

5
365/92

With other type core

4
365/83

Sipo/piso

14
365/87

Thin film

97
365/88

Domain tip

12
365/82

Two cells per bit

6
365/244

Miscellaneous

49
365/78

Plural shift register memory devices

187
365/226

Powering

3189
365/227

Conservation of power

1447
365/228

Data preservation

787
365/229

Standby power

885
365/106

Radiant energy

185
365/113

Amorphous

171
365/107

Chemical fluids

52
365/119

Color centers

88
365/110

Electroluminescent and photoconductive

29
365/111

Electroluminescent

24
365/118

Electron beam

122
365/117

Ferroelectric

181
365/108

Liquid crystal

82
365/109

Photoconductive and ferroelectric

50
365/112

Photoconductive

127
365/116

Plasma

34
365/114

Semiconductive

89
365/115

Diodes

57
365/94

Read only systems (i.e.. semipermanent)

492
365/102

Capacitative

94
365/96

Fusible

702
365/101

Inductive

12
365/97

Magnetic

157
365/98

Random core

20
365/99

Random wiring

9
365/100

Resistive

446
365/103

Semiconductive

181
365/105

Diodes

228
365/104

Transistors

813
365/95

With override (i.e., latent images)

32
365/189.01

Read/write circuit

1848
365/204

Accelerating charge or discharge

569
365/200

Bad bit

3347
365/223

Bridge

22
365/202

Complementing/balancing

520
365/222

Data refresh

2384
365/224

Eddy current

3
365/217

Electron beam

33
365/218

Erase

788
365/205

Flip-flop used for sensing

2273
365/190

For complementary information

1280
365/225.6

Having bipolar circuit element

157
365/225.7

Having fuse element

1636
365/189.05

Having particular data buffer or latch

4235
365/189.11

Including level shift or pull-up circuit

1804
365/225.5

Including magnetic element

165
365/189.09

Including reference or bias voltage generator

3209
365/189.06

Including signal clamping

516
365/189.07

Including signal comparison

2524
365/189.08

Including specified plural element logic arrangement

1161
365/225

Minor loop

11
365/189.02

Multiplexing

1197
365/206

Noise suppression

533
365/207

Differential sensing

2303
365/209

Magnetic

205
365/210

Reference or dummy element

1156
365/208

Semiconductors

988
365/214

Particular wiring

151
365/211

Temperature compensation

441
365/213

Magnetic

45
365/212

Semiconductor

155
365/215

Optical

167
365/216

Holographic

91
365/220

Parallel read/write

315
365/189.03

Plural use of terminal

438
365/203

Precharge

3273
365/221

Serial read/write

747
365/191

Signals

1103
365/199

Coincident a.c. signal with pulse

26
365/194

Delay

2395
365/195

Inhibit

650
365/196

Sense/inhibit

604
365/197

Microwave

5
365/192

Radio frequency

76
365/193

Strobe

949
365/198

Transmission

191
365/189.04

Simultaneous operations (e.g., read/write)

1328
365/219

Sipo/piso

269
365/201

Testing

4309
365/189.12

With shift register

743
365/73

Recirculation stores

82
365/76

Delay lines

39
365/74

Magnetic

33
365/77

Plural paths

25
365/75

Stepwise

11
365/129

Systems using particular element

131
365/163

Amorphous (electrical)

1552
365/149

Capacitors

2522
365/150

Inherent

117
365/133

Cells of diverse coercivity

39
365/134

Continuous cells

3
365/135

Elongated or bar-shaped cell

8
365/138

Chain

6
365/139

Plated wire

10
365/137

Tubular

4
365/136

Twisters

8
365/132

Different size cores

9
365/146

Electrets

20
365/164

Electrical contacts

105
365/165

Coherer

11
365/166

Relay

18
365/153

Electrochemical

122
365/145

Ferroelectric

1709
365/154

Flip-flop (electrical)

2560
365/156

Complementary

1099
365/155

Plural emitter or collector

133
365/169

Gunn effect

2
365/170

Hall effect

84
365/171

Magnetic thin film

2082
365/172

Isotropic

66
365/173

Multiple magnetic storage layers

1610
365/158

Magnetoresistive

2850
365/157

Magnetostrictive or piezoelectric

226
365/151

Molecular or atomic

304
365/152

Nuclear induction or spin echo

7
365/140

Multiaperture cell

4
365/141

Aperture plate

2
365/142

Aperture with transverse axis

0
365/143

Biax

5
365/144

Same size apertures

5
365/159

Negative resistance

92
365/147

Persistent internal polarization (pip)

16
365/148

Resistive

2552
365/174

Semiconductive

528
365/177

Bioplar and fet

361
365/181

Complementary conductivity

156
365/175

Diodes

462
365/180

Four layer devices

86
365/188

Four or more devices per bit

153
365/182

Insulated gate devices

573
365/183

Charge coupled

187
365/184

Variable threshold

368
365/178

Ion implantation

69
365/179

Plural emitter or collector

79
365/176

Silicon on sapphire (sos)

32
365/186

Single device per bit

90
365/187

Three devices per bit

90
365/167

Simulating biological cells

8
365/160

Superconductive

43
365/162

Josephson

76
365/161

Thin film

64
365/168

Ternary

204
365/130

Three-dimensional magnetic array

104
365/131

Two magnetic cells per bit

51
 
 
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