| Class Number |
Class Name |
No. of Patents |
| 365/230.01 |
Addressing |
977 |
| 365/238.5 |
Byte or page addressing |
469 |
| 365/238 |
Cartesian memories |
73 |
| 365/230.09 |
Combined random and sequential addressing |
281 |
| 365/236 |
Counting |
692 |
| 365/242 |
Current steering |
43 |
| 365/243 |
Diode |
34 |
| 365/237 |
Electron beam |
20 |
| 365/243.5 |
Including magnetic element |
17 |
| 365/230.08 |
Including particular address buffer or latch circuit arrangement |
1718 |
| 365/230.05 |
Multiple port access |
1002 |
| 365/230.02 |
Multiplexing |
716 |
| 365/234 |
Optical |
87 |
| 365/235 |
Page memories |
82 |
| 365/230.06 |
Particular decoder or driver circuit |
3689 |
| 365/230.07 |
Including magnetic element |
37 |
| 365/230.03 |
Plural blocks or banks |
3967 |
| 365/230.04 |
Alternate addressing (e.g., even/odd) |
429 |
| 365/239 |
Sequential |
413 |
| 365/241 |
Detectors |
40 |
| 365/240 |
Using shift register |
266 |
| 365/233 |
Sync/clocking |
3081 |
| 365/233.5 |
Transition detection |
729 |
| 365/231 |
Using selective matrix |
84 |
| 365/232 |
Magnetic |
42 |
| 365/45 |
Analog storage systems |
236 |
| 365/48 |
Magnetic |
30 |
| 365/46 |
Resistive |
50 |
| 365/47 |
Thermoplastic |
3 |
| 365/49 |
Associative memories |
1168 |
| 365/50 |
Magnetic |
47 |
| 365/185.01 |
Floating gate |
611 |
| 365/185.04 |
Data security |
307 |
| 365/185.02 |
Disturbance control |
412 |
| 365/185.03 |
Multiple values (e.g., analog) |
1250 |
| 365/185.18 |
Particular biasing |
2250 |
| 365/185.23 |
Drive circuitry (e.g., word line driver) |
1059 |
| 365/185.29 |
Erase |
1677 |
| 365/185.33 |
Flash |
1643 |
| 365/185.31 |
Nonsubstrate discharge |
96 |
| 365/185.32 |
Radiation erasure |
80 |
| 365/185.3 |
Over erasure |
415 |
| 365/185.26 |
Floating electrode (e.g., source, control gate, drain) |
680 |
| 365/185.25 |
Line charging (e.g., precharge, discharge, refresh) |
672 |
| 365/185.19 |
Multiple pulses (e.g., ramp) |
619 |
| 365/185.2 |
Reference signal (e.g., dummy cell) |
846 |
| 365/185.21 |
Sensing circuitry (e.g., current mirror) |
1184 |
| 365/185.22 |
Verify signal |
1384 |
| 365/185.27 |
Substrate bias |
504 |
| 365/185.24 |
Threshold setting (e.g., conditioning) |
998 |
| 365/185.28 |
Tunnel programming |
1084 |
| 365/185.05 |
Particular connection |
744 |
| 365/185.11 |
Bank or block architecture |
1328 |
| 365/185.13 |
Global word or bit lines |
393 |
| 365/185.12 |
Parallel row lines (e.g., page mode) |
570 |
| 365/185.07 |
Cross-coupled cell |
162 |
| 365/185.09 |
Error correction (e.g., redundancy, endurance) |
833 |
| 365/185.1 |
Extended floating gate |
297 |
| 365/185.17 |
Logic connection (e.g., nand string) |
1184 |
| 365/185.14 |
Program gate |
489 |
| 365/185.15 |
Weak inversion injection |
103 |
| 365/185.06 |
Segregated columns |
210 |
| 365/185.16 |
Virtual ground |
304 |
| 365/185.08 |
With volatile signal storage device |
456 |
| 365/51 |
Format or disposition of elements |
1324 |
| 365/52 |
Hardware for storage elements |
401 |
| 365/54 |
Ground plane |
17 |
| 365/55 |
Magnetic |
77 |
| 365/60 |
Air gap |
3 |
| 365/59 |
Embedded conductor |
9 |
| 365/61 |
Hairpin conductor |
5 |
| 365/57 |
Keeper |
10 |
| 365/62 |
Permanent magnet |
14 |
| 365/58 |
Slot |
5 |
| 365/56 |
Spacers |
9 |
| 365/53 |
Shields |
92 |
| 365/120 |
Information masking |
90 |
| 365/123 |
Bragg cells |
7 |
| 365/124 |
Diffraction |
49 |
| 365/125 |
Holograms |
150 |
| 365/128 |
Electron beams |
33 |
| 365/121 |
Polarization |
60 |
| 365/122 |
Magneto-optical |
242 |
| 365/126 |
Thermoplastic |
58 |
| 365/127 |
Transparency |
95 |
| 365/63 |
Interconnection arrangements |
2323 |
| 365/65 |
Ferroelectric |
174 |
| 365/66 |
Magnetic |
171 |
| 365/69 |
Crossover |
93 |
| 365/67 |
Plural diagonal |
3 |
| 365/68 |
Tree |
9 |
| 365/70 |
Woven |
3 |
| 365/71 |
Negative resistance |
20 |
| 365/64 |
Optical |
58 |
| 365/72 |
Transistors or diodes |
296 |
| 365/1 |
Magnetic bubbles |
127 |
| 365/27 |
Bias |
29 |
| 365/28 |
Variable |
22 |
| 365/19 |
Conductor propagation |
44 |
| 365/20 |
Including a.c. signal |
12 |
| 365/21 |
Three phase signals |
3 |
| 365/4 |
Decoder |
22 |
| 365/7 |
Detectors |
30 |
| 365/9 |
Hall effect |
22 |
| 365/8 |
Magnetoresistive |
94 |
| 365/10 |
Optical |
47 |
| 365/31 |
Different size bubbles |
8 |
| 365/2 |
Disposition of elements |
113 |
| 365/3 |
Lattice |
37 |
| 365/11 |
Generators |
33 |
| 365/12 |
By splitting |
115 |
| 365/35 |
Guide structure |
16 |
| 365/36 |
Ion implantation |
125 |
| 365/39 |
Overlays |
71 |
| 365/43 |
Chevrons |
77 |
| 365/41 |
Dots |
41 |
| 365/40 |
On opposite sides of storage medium |
6 |
| 365/44 |
Rectangular bars |
11 |
| 365/42 |
Wedges |
10 |
| 365/37 |
Slots or rails |
42 |
| 365/38 |
Zigzag |
11 |
| 365/30 |
In-plane field (nonrotating) |
22 |
| 365/5 |
Logic |
21 |
| 365/33 |
Magnetic storage material |
98 |
| 365/34 |
Amorphous |
44 |
| 365/32 |
Multiple magnetic layer |
54 |
| 365/22 |
One's and zero's |
13 |
| 365/23 |
Plural direction propagation |
11 |
| 365/24 |
Nonsequential |
8 |
| 365/13 |
Plural interacting paths |
21 |
| 365/18 |
Boundary |
3 |
| 365/14 |
Closed loop |
26 |
| 365/15 |
Major-minor |
157 |
| 365/16 |
With switch at interacting point |
39 |
| 365/17 |
Idler switch |
16 |
| 365/6 |
Rotating field circuits |
42 |
| 365/29 |
Strip domain |
51 |
| 365/25 |
Velocity |
12 |
| 365/26 |
Turns |
15 |
| 365/80 |
Magnetic shift registers |
14 |
| 365/81 |
Bidirectional |
4 |
| 365/85 |
Continuous |
1 |
| 365/86 |
Plated wire |
1 |
| 365/84 |
Core in transfer loop |
2 |
| 365/93 |
Including delay means |
1 |
| 365/89 |
Logic |
1 |
| 365/90 |
Multiaperture cell |
3 |
| 365/91 |
Ladder |
5 |
| 365/92 |
With other type core |
4 |
| 365/83 |
Sipo/piso |
9 |
| 365/87 |
Thin film |
68 |
| 365/88 |
Domain tip |
5 |
| 365/82 |
Two cells per bit |
2 |
| 365/244 |
Miscellaneous |
42 |
| 365/78 |
Plural shift register memory devices |
179 |
| 365/226 |
Powering |
2326 |
| 365/227 |
Conservation of power |
1049 |
| 365/228 |
Data preservation |
602 |
| 365/229 |
Standby power |
647 |
| 365/106 |
Radiant energy |
165 |
| 365/113 |
Amorphous |
124 |
| 365/107 |
Chemical fluids |
50 |
| 365/119 |
Color centers |
87 |
| 365/110 |
Electroluminescent and photoconductive |
26 |
| 365/111 |
Electroluminescent |
20 |
| 365/118 |
Electron beam |
117 |
| 365/117 |
Ferroelectric |
156 |
| 365/108 |
Liquid crystal |
81 |
| 365/109 |
Photoconductive and ferroelectric |
39 |
| 365/112 |
Photoconductive |
115 |
| 365/116 |
Plasma |
34 |
| 365/114 |
Semiconductive |
75 |
| 365/115 |
Diodes |
30 |
| 365/94 |
Read only systems (i.e.. semipermanent) |
359 |
| 365/102 |
Capacitative |
70 |
| 365/96 |
Fusible |
518 |
| 365/101 |
Inductive |
8 |
| 365/97 |
Magnetic |
105 |
| 365/98 |
Random core |
15 |
| 365/99 |
Random wiring |
7 |
| 365/100 |
Resistive |
216 |
| 365/103 |
Semiconductive |
139 |
| 365/105 |
Diodes |
168 |
| 365/104 |
Transistors |
676 |
| 365/95 |
With override (i.e., latent images) |
30 |
| 365/189.01 |
Read/write circuit |
1848 |
| 365/204 |
Accelerating charge or discharge |
459 |
| 365/200 |
Bad bit |
2746 |
| 365/223 |
Bridge |
13 |
| 365/202 |
Complementing/balancing |
413 |
| 365/222 |
Data refresh |
1912 |
| 365/224 |
Eddy current |
0 |
| 365/217 |
Electron beam |
32 |
| 365/218 |
Erase |
707 |
| 365/205 |
Flip-flop used for sensing |
1784 |
| 365/190 |
For complementary information |
1154 |
| 365/225.6 |
Having bipolar circuit element |
148 |
| 365/225.7 |
Having fuse element |
1286 |
| 365/189.05 |
Having particular data buffer or latch |
3198 |
| 365/189.11 |
Including level shift or pull-up circuit |
1356 |
| 365/225.5 |
Including magnetic element |
92 |
| 365/189.09 |
Including reference or bias voltage generator |
2360 |
| 365/189.06 |
Including signal clamping |
376 |
| 365/189.07 |
Including signal comparison |
1934 |
| 365/189.08 |
Including specified plural element logic arrangement |
863 |
| 365/225 |
Minor loop |
8 |
| 365/189.02 |
Multiplexing |
935 |
| 365/206 |
Noise suppression |
385 |
| 365/207 |
Differential sensing |
1742 |
| 365/209 |
Magnetic |
158 |
| 365/210 |
Reference or dummy element |
1156 |
| 365/208 |
Semiconductors |
866 |
| 365/214 |
Particular wiring |
113 |
| 365/211 |
Temperature compensation |
248 |
| 365/213 |
Magnetic |
36 |
| 365/212 |
Semiconductor |
110 |
| 365/215 |
Optical |
149 |
| 365/216 |
Holographic |
86 |
| 365/220 |
Parallel read/write |
265 |
| 365/189.03 |
Plural use of terminal |
331 |
| 365/203 |
Precharge |
2642 |
| 365/221 |
Serial read/write |
670 |
| 365/191 |
Signals |
661 |
| 365/199 |
Coincident a.c. signal with pulse |
17 |
| 365/194 |
Delay |
1735 |
| 365/195 |
Inhibit |
565 |
| 365/196 |
Sense/inhibit |
422 |
| 365/197 |
Microwave |
4 |
| 365/192 |
Radio frequency |
32 |
| 365/193 |
Strobe |
599 |
| 365/198 |
Transmission |
109 |
| 365/189.04 |
Simultaneous operations (e.g., read/write) |
1037 |
| 365/219 |
Sipo/piso |
221 |
| 365/201 |
Testing |
3352 |
| 365/189.12 |
With shift register |
609 |
| 365/73 |
Recirculation stores |
80 |
| 365/76 |
Delay lines |
29 |
| 365/74 |
Magnetic |
14 |
| 365/77 |
Plural paths |
24 |
| 365/75 |
Stepwise |
11 |
| 365/129 |
Systems using particular element |
67 |
| 365/163 |
Amorphous (electrical) |
412 |
| 365/149 |
Capacitors |
2081 |
| 365/150 |
Inherent |
88 |
| 365/133 |
Cells of diverse coercivity |
36 |
| 365/134 |
Continuous cells |
2 |
| 365/135 |
Elongated or bar-shaped cell |
4 |
| 365/138 |
Chain |
1 |
| 365/139 |
Plated wire |
8 |
| 365/137 |
Tubular |
4 |
| 365/136 |
Twisters |
7 |
| 365/132 |
Different size cores |
7 |
| 365/146 |
Electrets |
13 |
| 365/164 |
Electrical contacts |
46 |
| 365/165 |
Coherer |
4 |
| 365/166 |
Relay |
10 |
| 365/153 |
Electrochemical |
92 |
| 365/145 |
Ferroelectric |
1411 |
| 365/154 |
Flip-flop (electrical) |
1838 |
| 365/156 |
Complementary |
812 |
| 365/155 |
Plural emitter or collector |
116 |
| 365/169 |
Gunn effect |
2 |
| 365/170 |
Hall effect |
66 |
| 365/171 |
Magnetic thin film |
1207 |
| 365/172 |
Isotropic |
24 |
| 365/173 |
Multiple magnetic storage layers |
1046 |
| 365/158 |
Magnetoresistive |
1599 |
| 365/157 |
Magnetostrictive or piezoelectric |
119 |
| 365/151 |
Molecular or atomic |
200 |
| 365/152 |
Nuclear induction or spin echo |
7 |
| 365/140 |
Multiaperture cell |
3 |
| 365/141 |
Aperture plate |
2 |
| 365/142 |
Aperture with transverse axis |
0 |
| 365/143 |
Biax |
4 |
| 365/144 |
Same size apertures |
5 |
| 365/159 |
Negative resistance |
68 |
| 365/147 |
Persistent internal polarization (pip) |
12 |
| 365/148 |
Resistive |
625 |
| 365/174 |
Semiconductive |
392 |
| 365/177 |
Bioplar and fet |
306 |
| 365/181 |
Complementary conductivity |
135 |
| 365/175 |
Diodes |
287 |
| 365/180 |
Four layer devices |
59 |
| 365/188 |
Four or more devices per bit |
115 |
| 365/182 |
Insulated gate devices |
520 |
| 365/183 |
Charge coupled |
175 |
| 365/184 |
Variable threshold |
291 |
| 365/178 |
Ion implantation |
61 |
| 365/179 |
Plural emitter or collector |
75 |
| 365/176 |
Silicon on sapphire (sos) |
23 |
| 365/186 |
Single device per bit |
63 |
| 365/187 |
Three devices per bit |
75 |
| 365/167 |
Simulating biological cells |
6 |
| 365/160 |
Superconductive |
38 |
| 365/162 |
Josephson |
65 |
| 365/161 |
Thin film |
52 |
| 365/168 |
Ternary |
181 |
| 365/130 |
Three-dimensional magnetic array |
43 |
| 365/131 |
Two magnetic cells per bit |
13 |
