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Class Information
Number: 365
Name: Static information storage and retrieval >
Description: This is the generic class for apparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.


Class Number Class Name No. of Patents
365/230.01

Addressing

976
365/238.5

Byte or page addressing

467
365/238

Cartesian memories

73
365/230.09

Combined random and sequential addressing

281
365/236

Counting

692
365/242

Current steering

43
365/243

Diode

34
365/237

Electron beam

20
365/243.5

Including magnetic element

17
365/230.08

Including particular address buffer or latch circuit arrangement

1713
365/230.05

Multiple port access

999
365/230.02

Multiplexing

716
365/234

Optical

87
365/235

Page memories

81
365/230.06

Particular decoder or driver circuit

3685
365/230.07

Including magnetic element

37
365/230.03

Plural blocks or banks

3962
365/230.04

Alternate addressing (e.g., even/odd)

429
365/239

Sequential

413
365/241

Detectors

39
365/240

Using shift register

266
365/233

Sync/clocking

3081
365/233.5

Transition detection

729
365/231

Using selective matrix

84
365/232

Magnetic

42
365/45

Analog storage systems

236
365/48

Magnetic

30
365/46

Resistive

49
365/47

Thermoplastic

3
365/49

Associative memories

1168
365/50

Magnetic

47
365/185.01

Floating gate

608
365/185.04

Data security

307
365/185.02

Disturbance control

407
365/185.03

Multiple values (e.g., analog)

1242
365/185.18

Particular biasing

2240
365/185.23

Drive circuitry (e.g., word line driver)

1056
365/185.29

Erase

1675
365/185.33

Flash

1636
365/185.31

Nonsubstrate discharge

96
365/185.32

Radiation erasure

80
365/185.3

Over erasure

414
365/185.26

Floating electrode (e.g., source, control gate, drain)

677
365/185.25

Line charging (e.g., precharge, discharge, refresh)

670
365/185.19

Multiple pulses (e.g., ramp)

617
365/185.2

Reference signal (e.g., dummy cell)

843
365/185.21

Sensing circuitry (e.g., current mirror)

1176
365/185.22

Verify signal

1374
365/185.27

Substrate bias

503
365/185.24

Threshold setting (e.g., conditioning)

987
365/185.28

Tunnel programming

1080
365/185.05

Particular connection

740
365/185.11

Bank or block architecture

1324
365/185.13

Global word or bit lines

391
365/185.12

Parallel row lines (e.g., page mode)

569
365/185.07

Cross-coupled cell

162
365/185.09

Error correction (e.g., redundancy, endurance)

828
365/185.1

Extended floating gate

297
365/185.17

Logic connection (e.g., nand string)

1171
365/185.14

Program gate

485
365/185.15

Weak inversion injection

102
365/185.06

Segregated columns

210
365/185.16

Virtual ground

302
365/185.08

With volatile signal storage device

456
365/51

Format or disposition of elements

1322
365/52

Hardware for storage elements

401
365/54

Ground plane

17
365/55

Magnetic

77
365/60

Air gap

3
365/59

Embedded conductor

9
365/61

Hairpin conductor

5
365/57

Keeper

10
365/62

Permanent magnet

14
365/58

Slot

5
365/56

Spacers

9
365/53

Shields

92
365/120

Information masking

90
365/123

Bragg cells

7
365/124

Diffraction

49
365/125

Holograms

150
365/128

Electron beams

33
365/121

Polarization

60
365/122

Magneto-optical

242
365/126

Thermoplastic

58
365/127

Transparency

95
365/63

Interconnection arrangements

2318
365/65

Ferroelectric

173
365/66

Magnetic

170
365/69

Crossover

93
365/67

Plural diagonal

3
365/68

Tree

9
365/70

Woven

3
365/71

Negative resistance

20
365/64

Optical

58
365/72

Transistors or diodes

294
365/1

Magnetic bubbles

127
365/27

Bias

29
365/28

Variable

22
365/19

Conductor propagation

44
365/20

Including a.c. signal

12
365/21

Three phase signals

3
365/4

Decoder

22
365/7

Detectors

30
365/9

Hall effect

22
365/8

Magnetoresistive

94
365/10

Optical

47
365/31

Different size bubbles

8
365/2

Disposition of elements

113
365/3

Lattice

37
365/11

Generators

33
365/12

By splitting

115
365/35

Guide structure

16
365/36

Ion implantation

125
365/39

Overlays

71
365/43

Chevrons

77
365/41

Dots

41
365/40

On opposite sides of storage medium

5
365/44

Rectangular bars

11
365/42

Wedges

10
365/37

Slots or rails

42
365/38

Zigzag

11
365/30

In-plane field (nonrotating)

22
365/5

Logic

21
365/33

Magnetic storage material

98
365/34

Amorphous

44
365/32

Multiple magnetic layer

54
365/22

One's and zero's

13
365/23

Plural direction propagation

11
365/24

Nonsequential

8
365/13

Plural interacting paths

21
365/18

Boundary

3
365/14

Closed loop

26
365/15

Major-minor

157
365/16

With switch at interacting point

39
365/17

Idler switch

16
365/6

Rotating field circuits

42
365/29

Strip domain

51
365/25

Velocity

12
365/26

Turns

15
365/80

Magnetic shift registers

14
365/81

Bidirectional

4
365/85

Continuous

1
365/86

Plated wire

1
365/84

Core in transfer loop

2
365/93

Including delay means

1
365/89

Logic

1
365/90

Multiaperture cell

3
365/91

Ladder

5
365/92

With other type core

4
365/83

Sipo/piso

9
365/87

Thin film

68
365/88

Domain tip

5
365/82

Two cells per bit

2
365/244

Miscellaneous

42
365/78

Plural shift register memory devices

179
365/226

Powering

2318
365/227

Conservation of power

1047
365/228

Data preservation

599
365/229

Standby power

645
365/106

Radiant energy

165
365/113

Amorphous

124
365/107

Chemical fluids

50
365/119

Color centers

87
365/110

Electroluminescent and photoconductive

26
365/111

Electroluminescent

20
365/118

Electron beam

117
365/117

Ferroelectric

156
365/108

Liquid crystal

81
365/109

Photoconductive and ferroelectric

39
365/112

Photoconductive

115
365/116

Plasma

34
365/114

Semiconductive

75
365/115

Diodes

30
365/94

Read only systems (i.e.. semipermanent)

358
365/102

Capacitative

70
365/96

Fusible

517
365/101

Inductive

8
365/97

Magnetic

105
365/98

Random core

15
365/99

Random wiring

7
365/100

Resistive

216
365/103

Semiconductive

139
365/105

Diodes

166
365/104

Transistors

676
365/95

With override (i.e., latent images)

30
365/189.01

Read/write circuit

1848
365/204

Accelerating charge or discharge

458
365/200

Bad bit

2744
365/223

Bridge

13
365/202

Complementing/balancing

412
365/222

Data refresh

1906
365/224

Eddy current

0
365/217

Electron beam

32
365/218

Erase

706
365/205

Flip-flop used for sensing

1781
365/190

For complementary information

1154
365/225.6

Having bipolar circuit element

148
365/225.7

Having fuse element

1285
365/189.05

Having particular data buffer or latch

3189
365/189.11

Including level shift or pull-up circuit

1351
365/225.5

Including magnetic element

91
365/189.09

Including reference or bias voltage generator

2353
365/189.06

Including signal clamping

376
365/189.07

Including signal comparison

1931
365/189.08

Including specified plural element logic arrangement

862
365/225

Minor loop

8
365/189.02

Multiplexing

934
365/206

Noise suppression

384
365/207

Differential sensing

1738
365/209

Magnetic

157
365/210

Reference or dummy element

1156
365/208

Semiconductors

865
365/214

Particular wiring

113
365/211

Temperature compensation

246
365/213

Magnetic

36
365/212

Semiconductor

110
365/215

Optical

149
365/216

Holographic

86
365/220

Parallel read/write

263
365/189.03

Plural use of terminal

330
365/203

Precharge

2637
365/221

Serial read/write

669
365/191

Signals

657
365/199

Coincident a.c. signal with pulse

16
365/194

Delay

1734
365/195

Inhibit

565
365/196

Sense/inhibit

421
365/197

Microwave

4
365/192

Radio frequency

32
365/193

Strobe

599
365/198

Transmission

108
365/189.04

Simultaneous operations (e.g., read/write)

1034
365/219

Sipo/piso

220
365/201

Testing

3345
365/189.12

With shift register

608
365/73

Recirculation stores

80
365/76

Delay lines

29
365/74

Magnetic

14
365/77

Plural paths

24
365/75

Stepwise

11
365/129

Systems using particular element

65
365/163

Amorphous (electrical)

410
365/149

Capacitors

2079
365/150

Inherent

88
365/133

Cells of diverse coercivity

36
365/134

Continuous cells

2
365/135

Elongated or bar-shaped cell

4
365/138

Chain

1
365/139

Plated wire

8
365/137

Tubular

4
365/136

Twisters

7
365/132

Different size cores

7
365/146

Electrets

13
365/164

Electrical contacts

46
365/165

Coherer

4
365/166

Relay

10
365/153

Electrochemical

92
365/145

Ferroelectric

1408
365/154

Flip-flop (electrical)

1836
365/156

Complementary

810
365/155

Plural emitter or collector

116
365/169

Gunn effect

2
365/170

Hall effect

65
365/171

Magnetic thin film

1203
365/172

Isotropic

23
365/173

Multiple magnetic storage layers

1043
365/158

Magnetoresistive

1593
365/157

Magnetostrictive or piezoelectric

118
365/151

Molecular or atomic

200
365/152

Nuclear induction or spin echo

7
365/140

Multiaperture cell

3
365/141

Aperture plate

2
365/142

Aperture with transverse axis

0
365/143

Biax

4
365/144

Same size apertures

5
365/159

Negative resistance

68
365/147

Persistent internal polarization (pip)

12
365/148

Resistive

618
365/174

Semiconductive

392
365/177

Bioplar and fet

306
365/181

Complementary conductivity

135
365/175

Diodes

286
365/180

Four layer devices

58
365/188

Four or more devices per bit

114
365/182

Insulated gate devices

520
365/183

Charge coupled

175
365/184

Variable threshold

291
365/178

Ion implantation

61
365/179

Plural emitter or collector

75
365/176

Silicon on sapphire (sos)

23
365/186

Single device per bit

63
365/187

Three devices per bit

75
365/167

Simulating biological cells

6
365/160

Superconductive

38
365/162

Josephson

65
365/161

Thin film

51
365/168

Ternary

181
365/130

Three-dimensional magnetic array

43
365/131

Two magnetic cells per bit

13
 
 
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