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Class Information
Number: 360/324.2
Name: Dynamic magnetic information storage or retrieval > Head > Magnetoresistive (mr) reproducing head > Having giant magnetoresistive (gmr) or colossal magnetoresistive (cmr) sensor formed of multiple thin films > Having tunnel junction effect
Description: Subject matter including a nonmetal film between two films having distinct magnetization directions wherein an electron tunnels through the nonmetal film.


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
7621038 Method for fabricating a three terminal magnetic sensor for magnetic heads with a semiconductor junction Nov. 24, 2009
7623324 Magnetic sensing element having reactive-ion-etching stop layer and process for producing same Nov. 24, 2009
7623325 Method for providing an endpoint layer for ion milling of top of read sensor having top lead connection and sensor formed thereby Nov. 24, 2009
7616412 Perpendicular spin-torque-driven magnetic oscillator Nov. 10, 2009
7606010 Mg-Zn oxide tunnel barriers and method of formation Oct. 20, 2009
7602592 Magnetoresistive element including connection layers with magnetization alignment angles therebetween of 30 to 60.degree. between metallic magnetic layers Oct. 13, 2009
7602590 Tunneling magneto-resistive spin valve sensor with novel composite free layer Oct. 13, 2009
7595966 Multi-valued data recording spin injection magnetization reversal element and device using the element Sep. 29, 2009
7595967 Method for fabricating a spacer layer for a magnetoresistive element Sep. 29, 2009
7583480 Magnetoresistance effect element with nano-junction between free and pinned layers Sep. 1, 2009
7582941 Magnetic memory device and method of fabricating the same Sep. 1, 2009
7580228 Current perpendicular to plane sensor with non-rectangular sense layer stack Aug. 25, 2009
7574791 Method to fabricate side shields for a magnetic sensor Aug. 18, 2009
7576956 Magnetic tunnel junction having diffusion stop layer Aug. 18, 2009
7573686 Thin-film magnetic head including low-resistance TMR element Aug. 11, 2009
7570463 Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials Aug. 4, 2009
7564659 Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement Jul. 21, 2009
7564235 Determination of magnetic read head properties Jul. 21, 2009
7562436 Deposition defined trackwidth for very narrow trackwidth CPP device Jul. 21, 2009
7542245 Composite thin-film magnetic head with non-magnetic conductive layer to balance parasitic capacitances Jun. 2, 2009
7538989 Tunnel MR head formed with partial milled stack May. 26, 2009
7535683 Magnetoresistive head with improved in-stack longitudinal biasing layers May. 19, 2009
7530160 Method for manufacturing a magnetoresistive sensor having improved antiparallel tab free layer biasing May. 12, 2009
7530158 CPP read sensor fabrication using heat resistant photomask May. 12, 2009
7525776 Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory Apr. 28, 2009
7522392 Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor Apr. 21, 2009
7514160 Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001) Apr. 7, 2009
7511928 Magnetic tunnel effect type magnetic head, and recorder/player Mar. 31, 2009
7506429 Method of constructing a magnetic sensor Mar. 24, 2009
7502211 MTJ device with partially milled anti-parallel coupled bottom free layer Mar. 10, 2009
7497007 Process of manufacturing a TMR device Mar. 3, 2009
7497008 Method of fabricating a thin film magnetic sensor on a wafer Mar. 3, 2009
7494724 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory Feb. 24, 2009
7495870 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus Feb. 24, 2009
7472469 Method for fabricating a magnetic head having a sensor stack and two lateral stack Jan. 6, 2009
7468542 Magnetoresistive device and nonvolatile magnetic memory equipped with the same Dec. 23, 2008
7466526 Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device Dec. 16, 2008
7460343 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer Dec. 2, 2008
7457085 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers Nov. 25, 2008
7453672 Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material Nov. 18, 2008
7453673 Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head Nov. 18, 2008
7450352 Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers Nov. 11, 2008
7444738 Method for tunnel junction sensor with magnetic cladding Nov. 4, 2008
7446984 Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers Nov. 4, 2008
7443639 Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials Oct. 28, 2008
7443636 Magnetic head having layered film with tilted crystalline grain structure Oct. 28, 2008
7436638 Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direct Oct. 14, 2008
7426096 Magnetoresistive effective element with high output stability and reduced read bleeding at track edges Sep. 16, 2008
7423851 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact Sep. 9, 2008
7419610 Method of partial depth material removal for fabrication of CPP read sensor Sep. 2, 2008

1 2 3 4 5 6 7 8 9


 
 
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