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Class Information
Number: 360/324.2
Name: Dynamic magnetic information storage or retrieval > Head > Magnetoresistive (mr) reproducing head > Having giant magnetoresistive (gmr) or colossal magnetoresistive (cmr) sensor formed of multiple thin films > Having tunnel junction effect
Description: Subject matter including a nonmetal film between two films having distinct magnetization directions wherein an electron tunnels through the nonmetal film.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710604 Magnetoresistive element and manufacturing method of the same Apr. 29, 2014
8701274 Method for manufacturing a magnetic head Apr. 22, 2014
8705213 Magnetic field detecting device with shielding layer at least partially surrounding magnetoresistive stack Apr. 22, 2014
8689430 Method for providing a perpendicular magnetic recording (PMR)head Apr. 8, 2014
8686524 Magnetic stack with oxide to reduce switching current Apr. 1, 2014
8677607 Method of manufacturing magnetoresistive element Mar. 25, 2014
8679577 Magnetic memory cell construction Mar. 25, 2014
8671554 Method of manufacturing a magneto-resistance effect element Mar. 18, 2014
8674465 MRAM device and integration techniques compatible with logic integration Mar. 18, 2014
8670216 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with an exchange-coupled reference layer having shape anisotropy Mar. 11, 2014
8670217 Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy Mar. 11, 2014
8670218 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer Mar. 11, 2014
8659103 Magnetoresistive element and magnetic memory using the same Feb. 25, 2014
8653824 Delta temperature test method and system Feb. 18, 2014
8638530 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure Jan. 28, 2014
8637947 Memory element and memory apparatus Jan. 28, 2014
8625237 Magnetic head and magnetic recording system Jan. 7, 2014
8615868 Method for manufacturing a magnetic sensor using two step ion milling Dec. 31, 2013
8607438 Method for fabricating a read sensor for a read transducer Dec. 17, 2013
8611055 Magnetic etch-stop layer for magnetoresistive read heads Dec. 17, 2013
8604573 Semiconductor memory device Dec. 10, 2013
8593766 Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer Nov. 26, 2013
8592930 Magnetic memory element, magnetic memory and initializing method Nov. 26, 2013
8592929 Symmetrically switchable spin-transfer-torque magnetoresistive device Nov. 26, 2013
8582252 Magnetic layer with grain refining agent Nov. 12, 2013
8582253 Magnetic sensor having a high spin polarization reference layer Nov. 12, 2013
8576518 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with exchange-coupled side shield structure Nov. 5, 2013
8576519 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges Nov. 5, 2013
8570691 TMR sensor film using a tantalum insertion layer and systems thereof Oct. 29, 2013
8563147 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization Oct. 22, 2013
8564080 Magnetic storage element utilizing improved pinned layer stack Oct. 22, 2013
8564911 Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element Oct. 22, 2013
8559141 Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface Oct. 15, 2013
8558333 System and method for manipulating domain pinning and reversal in ferromagnetic materials Oct. 15, 2013
8557407 Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier Oct. 15, 2013
8555486 Method for providing a pole in a magnetic recording transducer using a cathodic etch Oct. 15, 2013
8553372 Magnetic oscillator Oct. 8, 2013
8553371 TMR reader without DLC capping structure Oct. 8, 2013
8553370 TMR reader structure having shield layer Oct. 8, 2013
8551626 CCP-CPP magnetoresistive reader with high GMR value Oct. 8, 2013
8545999 Method and system for providing a magnetoresistive structure Oct. 1, 2013
8546897 Magnetic memory element Oct. 1, 2013
8547666 Current perpendicular to plane magnetoresistive head having suppressed spin torque noise Oct. 1, 2013
8536668 Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory Sep. 17, 2013
8530987 Magnetic memory including a magnetoresistive element Sep. 10, 2013
8519498 Magnetic stack having reference layers with orthogonal magnetization orientation directions Aug. 27, 2013
8518562 Magnetic storage device Aug. 27, 2013
8513751 Semiconductor storage device Aug. 20, 2013
8513752 Magnetic tunnel junction having coherent tunneling structure Aug. 20, 2013
8514525 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield Aug. 20, 2013

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