| Class Number |
Class Name |
No. of Patents |
| 326/17 |
Accelerating switching |
426 |
| 326/18 |
Bipolar transistor |
116 |
| 326/19 |
With schottky device |
89 |
| 326/20 |
Complementary transistors |
19 |
| 326/93 |
Clocking or synchronizing of logic stages or gates |
989 |
| 326/95 |
Field-effect transistor |
523 |
| 326/98 |
Mosfet |
756 |
| 326/96 |
Two or more clocks (e.g., phase clocking, etc.) |
162 |
| 326/97 |
Mosfet |
260 |
| 326/94 |
Metastable state prevention |
135 |
| 326/52 |
Exclusive function (e.g., exclusive or, etc.) |
163 |
| 326/54 |
Exclusive nor |
63 |
| 326/53 |
Half-adder or quarter-adder |
50 |
| 326/55 |
With field-effect transistor |
102 |
| 326/104 |
Function of and, or, nand, nor, or not |
183 |
| 326/109 |
Bipolar and fet |
69 |
| 326/110 |
Bi-cmos |
212 |
| 326/124 |
Bipolar transistor (e.g., rtl, dctl, etc.) |
66 |
| 326/130 |
Diode-transistor logic (dtl) |
19 |
| 326/131 |
With metal semiconductor junction diode (e.g., schottky barrier, etc.) |
32 |
| 326/126 |
Emitter-coupled or emitter-follower logic |
359 |
| 326/127 |
Current mode logic (cml) |
146 |
| 326/128 |
Transistor-transistor logic (ttl) |
76 |
| 326/129 |
Complementary transistor logic (ctl) |
34 |
| 326/125 |
Wired logic or open collector logic (e.g., wired-or, wired-and, dotted logic, etc.) |
64 |
| 326/132 |
With negative resistance device (e.g., tunnel diode, thyristor, etc.) |
5 |
| 326/105 |
Decoding |
273 |
| 326/106 |
With field-effect transistor |
284 |
| 326/108 |
Cmos |
185 |
| 326/107 |
Depletion or enhancement |
37 |
| 326/133 |
Diode |
12 |
| 326/134 |
Negative resistance diode (e.g., tunnel, gunn, etc.) |
30 |
| 326/112 |
Field-effect transistor (e.g., jfet, etc.) |
372 |
| 326/122 |
Complementary fet`s |
42 |
| 326/119 |
Mosfet (i.e., metal-oxide semiconductor field-effect transistor) |
273 |
| 326/121 |
Cmos |
795 |
| 326/120 |
Depletion or enhancement |
77 |
| 326/113 |
Pass transistor logic or transmission gate logic |
295 |
| 326/116 |
Schottky-gate fet (i.e., mesfet) |
48 |
| 326/117 |
Depletion or enhancement |
54 |
| 326/118 |
Diode transistor logic |
24 |
| 326/115 |
Source-coupled logic (e.g., current mode logic (cml), differential current switch logic (dcsl), etc.) |
226 |
| 326/114 |
Wired logic (e.g., wired-or, wired-and, dotted logic, etc.) |
65 |
| 326/123 |
With semiconductor diode or negative resistance device |
11 |
| 326/135 |
Negative resistance device |
26 |
| 326/111 |
Space discharge device (e.g., vacuum tube, etc.) |
3 |
| 326/99 |
Having logic levels conveyed by signal frequency or phase |
30 |
| 326/51 |
Inhibitor |
20 |
| 326/61 |
Insulated gate charge transfer device |
15 |
| 326/100 |
Integrated injection logic |
128 |
| 326/62 |
Interface (e.g., current drive, level shift, etc.) |
399 |
| 326/82 |
Current driving (e.g., fan in/out, off chip driving, etc.) |
812 |
| 326/89 |
Bipolar transistor |
268 |
| 326/90 |
Bus driving |
365 |
| 326/91 |
Having plural output pull-up or pull-down transistors |
57 |
| 326/92 |
With capacitive or inductive bootstrapping |
45 |
| 326/83 |
Field-effect transistor |
1912 |
| 326/84 |
Bi-cmos |
216 |
| 326/85 |
Having plural output pull-up or pull-down transistors |
92 |
| 326/86 |
Bus driving |
1523 |
| 326/87 |
Having plural output pull-up or pull-down transistors |
705 |
| 326/88 |
With capacitive or inductive bootstrapping |
270 |
| 326/63 |
Logic level shifting (i.e., interface between devices of different logic families) |
304 |
| 326/64 |
Bi-cmos |
38 |
| 326/66 |
Ecl to/from cmos |
138 |
| 326/67 |
Ecl to/from ttl |
28 |
| 326/65 |
Ttl to/from cmos |
47 |
| 326/75 |
Bipolar transistor |
89 |
| 326/77 |
Ecl to/from mos |
49 |
| 326/78 |
Ecl to/from ttl |
92 |
| 326/79 |
Integrated injection logic (i2l) |
26 |
| 326/76 |
Ttl to/from mos |
10 |
| 326/68 |
Field-effect transistor (e.g., jfet, mosfet, etc.) |
774 |
| 326/69 |
Ecl to/from gaas fet (e.g., mesfet, etc.) |
19 |
| 326/73 |
Ecl to/from mos |
102 |
| 326/74 |
Ecl to/from ttl |
17 |
| 326/70 |
Ttl to/from mos |
66 |
| 326/71 |
Ttl to/from cmos |
148 |
| 326/72 |
Using depletion or enhancement transistors |
15 |
| 326/80 |
Supply voltage level shifting (i.e., interface between devices of a same logic family with different operating voltage levels) |
556 |
| 326/81 |
Cmos |
1031 |
| 326/136 |
Miscellaneous |
47 |
| 326/37 |
Multifunctional or programmable (e.g., universal, etc.) |
545 |
| 326/39 |
Array (e.g., pla, pal, pld, etc.) |
1388 |
| 326/42 |
Bipolar transistor |
39 |
| 326/43 |
Emitter-coupled logic or emitter-follower logic |
48 |
| 326/44 |
Field effect transistor |
251 |
| 326/45 |
Complementary fet`s |
137 |
| 326/41 |
Significant integrated structure, layout, or layout interconnections |
1811 |
| 326/40 |
With flip-flop or sequential device |
818 |
| 326/48 |
Bipolar transistor |
56 |
| 326/49 |
Field-effect transistor |
118 |
| 326/50 |
Complementary fet`s |
101 |
| 326/38 |
Having details of setting or programming of interconnections or logic functions |
1851 |
| 326/46 |
Sequential (i.e., finite state machine) or with flip-flop |
375 |
| 326/47 |
Significant integrated structure, layout, or layout interconnections |
596 |
| 326/9 |
Reliability |
165 |
| 326/14 |
Fail-safe |
154 |
| 326/15 |
Parasitic prevention in integrated circuit structure |
90 |
| 326/10 |
Redundant |
167 |
| 326/11 |
Voter circuit (e.g., majority logic, etc.) |
58 |
| 326/13 |
With field effect-transistor |
55 |
| 326/12 |
With flip-flop |
32 |
| 326/8 |
Security (e.g., access or copy prevention, etc.) |
97 |
| 326/21 |
Signal sensitivity or transmission integrity |
702 |
| 326/30 |
Bus or line termination (e.g., clamping, impedance matching, etc.) |
1532 |
| 326/22 |
Input noise margin enhancement |
84 |
| 326/23 |
With field effect-transistor |
79 |
| 326/24 |
Complementary fet`s |
78 |
| 326/25 |
Depletion or enhancement |
17 |
| 326/26 |
Output switching noise reduction |
504 |
| 326/27 |
With field effect-transistor |
784 |
| 326/28 |
With clocking |
99 |
| 326/29 |
Pulse shaping (e.g., squaring, etc.) |
98 |
| 326/31 |
Signal level or switching threshold stabilization |
248 |
| 326/33 |
Bias or power supply level stabilization |
535 |
| 326/32 |
Temperature compensation |
248 |
| 326/34 |
With field effect-transistor |
372 |
| 326/101 |
Significant integrated structure, layout, or layout interconnections |
519 |
| 326/102 |
Field-effect transistor |
128 |
| 326/103 |
Complementary fet`s |
120 |
| 326/1 |
Superconductor (e.g., cryogenic, etc.) |
30 |
| 326/7 |
Function of and, or, nand, nor, or not |
10 |
| 326/2 |
Tunneling device |
10 |
| 326/6 |
Function of and, or, nand, nor, or not |
44 |
| 326/3 |
Josephson tunneling device |
59 |
| 326/5 |
Interference device (i.e., squid) |
18 |
| 326/4 |
Plural devices (e.g., distributive device, etc.) |
33 |
| 326/59 |
Three or more active levels (e.g., ternary, quatenary, etc.) |
85 |
| 326/60 |
With conversion (e.g., three level to two level, etc.) |
91 |
| 326/35 |
Threshold (e.g., majority, minority, or weighted inputs, etc.) |
127 |
| 326/36 |
With field effect-transistor |
69 |
| 326/56 |
Tri-state (i.e., high impedance as third state) |
307 |
| 326/57 |
With field effect-transistor |
220 |
| 326/58 |
Complementary fet`s |
337 |
| 326/16 |
With test facilitating feature |
420 |
