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Class Information
Number: 257/E49.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Solid-state devices with at least one potential-jump barrier or surface barrier using active layer of lower electrical conductivity than material adjacent thereto and through which carrier tunneling occurs, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) > Devices using mott metal-insulator transition, e.g., field-effect transistors (epo)
Description: This subclass is indented under subclass E49.001. This subclass is substantially the same in scope as ECLA classification H01L49/00A.










Patents under this class:

Patent Number Title Of Patent Date Issued
8330135 Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transi Dec. 11, 2012
8076662 Electric field induced phase transitions and dynamic tuning of the properties of oxide structures Dec. 13, 2011
7994573 Structure and method for forming power devices with carbon-containing region Aug. 9, 2011
7964866 Low power floating body memory cell based on low bandgap material quantum well Jun. 21, 2011
7929308 Power device package having enhanced heat dissipation Apr. 19, 2011
7812346 Metal oxide TFT with improved carrier mobility Oct. 12, 2010
7728327 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material Jun. 1, 2010
7439566 Semiconductor memory device having metal-insulator transition film resistor Oct. 21, 2008
6933553 Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor Aug. 23, 2005
6890766 Dual-type thin-film field-effect transistors and applications May. 10, 2005
6624463 Switching field effect transistor using abrupt metal-insulator transition Sep. 23, 2003
6555393 Process for fabricating a field-effect transistor with a buried Mott material oxide channel Apr. 29, 2003
6426536 Double layer perovskite oxide electrodes Jul. 30, 2002
6365913 Dual gate field effect transistor utilizing Mott transition materials Apr. 2, 2002
6350622 Process for fabrication of an all-epitaxial-oxide transistor Feb. 26, 2002
6333543 Field-effect transistor with a buried mott material oxide channel Dec. 25, 2001
6274916 Ultrafast nanoscale field effect transistor Aug. 14, 2001
6259114 Process for fabrication of an all-epitaxial-oxide transistor Jul. 10, 2001
6121642 Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications Sep. 19, 2000











 
 
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