Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Browse by Category: Main > Physics
Class Information
Number: 257/E49.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Solid-state devices with at least one potential-jump barrier or surface barrier using active layer of lower electrical conductivity than material adjacent thereto and through which carrier tunneling occurs, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) > Devices using mott metal-insulator transition, e.g., field-effect transistors (epo)
Description: This subclass is indented under subclass E49.001. This subclass is substantially the same in scope as ECLA classification H01L49/00A.










Patents under this class:

Patent Number Title Of Patent Date Issued
8330135 Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transi Dec. 11, 2012
8076662 Electric field induced phase transitions and dynamic tuning of the properties of oxide structures Dec. 13, 2011
7994573 Structure and method for forming power devices with carbon-containing region Aug. 9, 2011
7964866 Low power floating body memory cell based on low bandgap material quantum well Jun. 21, 2011
7929308 Power device package having enhanced heat dissipation Apr. 19, 2011
7812346 Metal oxide TFT with improved carrier mobility Oct. 12, 2010
7728327 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material Jun. 1, 2010
7439566 Semiconductor memory device having metal-insulator transition film resistor Oct. 21, 2008
6933553 Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor Aug. 23, 2005
6890766 Dual-type thin-film field-effect transistors and applications May. 10, 2005
6624463 Switching field effect transistor using abrupt metal-insulator transition Sep. 23, 2003
6555393 Process for fabricating a field-effect transistor with a buried Mott material oxide channel Apr. 29, 2003
6426536 Double layer perovskite oxide electrodes Jul. 30, 2002
6365913 Dual gate field effect transistor utilizing Mott transition materials Apr. 2, 2002
6350622 Process for fabrication of an all-epitaxial-oxide transistor Feb. 26, 2002
6333543 Field-effect transistor with a buried mott material oxide channel Dec. 25, 2001
6274916 Ultrafast nanoscale field effect transistor Aug. 14, 2001
6259114 Process for fabrication of an all-epitaxial-oxide transistor Jul. 10, 2001
6121642 Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications Sep. 19, 2000











 
 
  Recently Added Patents
Method for execution upon processing of at least one histological sample
Reading apparatus and reading method
Optical scanner and image-forming device
Management of memory array with magnetic random access memory (MRAM)
Method of patterning color conversion layer and method of manufacturing organic EL display using the patterning method
Visibility radio cap and network
Methods and systems providing desktop search capability to software application
  Randomly Featured Patents
Scent dispenser bottle
Combine elevator system
Recovering files in data storage systems
Method to provide for virtual screen overlay
Transformation weighted indexes offering concentrated multi-risk factor exposure
Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method
Free-space gas slab laser
Dual product pressure swing adsorption and membrane operations
Multilayer hydrodynamic sheath flow structure
Zoom lens able to obtain focal lengths beyond the zooming range