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Class Information
Number: 257/E47.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk negative resistance effect devices, e.g., gunn-effect devices, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) > Gunn-effect devices or transferred electron devices (epo)
Description: This subclass is indented under subclass E47.001. This subclass is substantially the same in scope as ECLA classification H01L47/02.










Sub-classes under this class:

Class Number Class Name Patents
257/E47.003 Controlled by electromagnetic radiation (epo) 2
257/E47.004 Gunn diodes (epo) 26


Patents under this class:

Patent Number Title Of Patent Date Issued
8604456 Nonvolatile memory device and method of manufacturing the same Dec. 10, 2013
8501525 Method of fabrication of programmable memory microelectric device Aug. 6, 2013
8502185 Switching device having a non-linear element Aug. 6, 2013
8207503 X-ray detector usable at microwave frequencies Jun. 26, 2012
8063394 Integrated circuit Nov. 22, 2011
6566694 Heterojunction bipolar transferred electron tetrode May. 20, 2003
5256579 Tunable-frequency Gunn diodes fabrication with focused ion beams Oct. 26, 1993
4975661 Gunn triode device, frequency divider and oscillator using this Gunn device Dec. 4, 1990
4894689 Transferred electron device Jan. 16, 1990
H170 Self aligned notch for InP planar transferred electron oscillator Dec. 2, 1986
4331967 Field effects semiconductor devices May. 25, 1982
4320313 Gunn-effect device modulatable by coded pulses, and a parallel-series digital converter using said device Mar. 16, 1982
4242597 Gunn effect shift register Dec. 30, 1980
4236165 Planar semiconductor device Nov. 25, 1980
4182964 Negative resistance element circuit combinations Jan. 8, 1980
4156203 Negative resistance element circuit combinations May. 22, 1979
4107718 Bulk semiconductor logic device Aug. 15, 1978
4086501 Planar transferred electron logic device with improved biasing means Apr. 25, 1978
4023196 Negative resistance element composed of a semiconductor element May. 10, 1977
4021680 Semiconductor device May. 3, 1977
3967305 Multichannel junction field-effect transistor and process Jun. 29, 1976
3953878 Constant temperature control for transferred electron devices Apr. 27, 1976











 
 
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