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Class Information
Number: 257/E47.001
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk negative resistance effect devices, e.g., gunn-effect devices, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo)
Description: This main group provides for active devices which exhibit the characteristic of decreasing current rate with increasing applied voltage, processes or apparatus peculiar to the manufacture or treatment of such devices or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L47/00.










Sub-classes under this class:

Class Number Class Name Patents
257/E47.002 Gunn-effect devices or transferred electron devices (epo) 22
257/E47.005 Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (epo) 19


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8686393 Integrated circuit semiconductor devices including channel trenches and related methods of manufacturing Apr. 1, 2014
8687402 Silicon-based nanoscale resistive device with adjustable resistance Apr. 1, 2014
8680504 Diamond type quad-resistor cells of PRAM Mar. 25, 2014
8674333 Variable-resistance material memories and methods Mar. 18, 2014
8674522 Castle-like chop mask for forming staggered datalines for improved contact isolation and pattern thereof Mar. 18, 2014
8659002 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same Feb. 25, 2014
8652884 Semiconductor device structure and method for manufacturing the same Feb. 18, 2014
8652897 Semiconductor memory devices and methods of fabricating the same Feb. 18, 2014
8642990 Diamond type quad-resistor cells of PRAM Feb. 4, 2014
8642985 Memory Cell Feb. 4, 2014
8637413 Nonvolatile resistive memory element with a passivated switching layer Jan. 28, 2014
8637843 Semiconductor device including phase change material and method of manufacturing same Jan. 28, 2014
8633465 Multilevel resistive memory having large storage capacity Jan. 21, 2014
8618523 Semiconductor device Dec. 31, 2013
8592889 Memory structure Nov. 26, 2013
8586962 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters Nov. 19, 2013
8574956 Method of forming non-volatile resistive-switching memories Nov. 5, 2013
8569732 Memory element and memory device Oct. 29, 2013
8569730 Carbon-based interface layer for a memory device and methods of forming the same Oct. 29, 2013
8563962 Memory device and method of manufacturing the same Oct. 22, 2013
8558209 Memory cells having-multi-portion data storage region Oct. 15, 2013
8551853 Non-volatile semiconductor memory device and manufacturing method thereof Oct. 8, 2013
8546782 Memory element and memory device Oct. 1, 2013
8536558 RRAM structure with improved memory margin Sep. 17, 2013
8519375 Non-volatile memory with oxygen vacancy barrier layer Aug. 27, 2013
8519373 Memory cells Aug. 27, 2013
8513634 Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same Aug. 20, 2013
8513639 Resistive-switching memory and fabrication method thereof Aug. 20, 2013
8502186 Semiconductor memory device Aug. 6, 2013
8502185 Switching device having a non-linear element Aug. 6, 2013
8501525 Method of fabrication of programmable memory microelectric device Aug. 6, 2013
8492206 Semiconductor device structure and method for manufacturing the same Jul. 23, 2013
8492740 Memory element and memory device Jul. 23, 2013
8481990 Nonvolatile memory element Jul. 9, 2013
8470676 Programmable element, and memory device or logic circuit Jun. 25, 2013
8466446 Atomic layer deposition of metal oxide materials for memory applications Jun. 18, 2013
8445319 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element May. 21, 2013
8435827 Programmable resistive memory cell with sacrificial metal May. 7, 2013
8426837 Resistive memory device and method of manufacturing the same Apr. 23, 2013
8426841 Transparent memory for transparent electronic device Apr. 23, 2013
8422283 Phase change memory device to prevent thermal cross-talk and method for manufacturing the same Apr. 16, 2013
8415738 Semiconductor memory device and manufacturing method thereof Apr. 9, 2013
8415651 Phase change memory cell having top and bottom sidewall contacts Apr. 9, 2013
8394670 Vertical diodes for non-volatile memory device Mar. 12, 2013
8395139 1T1R resistive memory device and fabrication method thereof Mar. 12, 2013
8384060 Resistive memory device Feb. 26, 2013
8378328 Phase change memory random access device using single-element phase change material Feb. 19, 2013
8362477 High density memory device Jan. 29, 2013
8362457 Semiconductor device and method for fabricating the same Jan. 29, 2013
8350248 Memory element and memory device Jan. 8, 2013

1 2 3 4










 
 
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