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Class Information
Number: 257/E45.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Solid-state devices adapted for rectifying, amplifying, oscillating, or switching without potential-jump barrier or surface barrier, e.g., dielectric triodes; ovshinsky-effect devices, processes, or apparatus peculiar to manufacture or treatment thereof, or of parts thereof (epo) > Bistable switching devices, e.g., ovshinsky-effect devices (epo)
Description: This subclass is indented under subclass E45.001. This subclass is substantially the same in scope as ECLA classification H01L45/00B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619237 |
Programmable resistive memory cell with self-forming gap |
Nov. 17, 2009 |
| 7612360 |
Non-volatile memory devices having cell diodes |
Nov. 3, 2009 |
| 7598512 |
Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
Oct. 6, 2009 |
| 7598113 |
Phase change memory device and fabricating method therefor |
Oct. 6, 2009 |
| 7589342 |
Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same |
Sep. 15, 2009 |
| 7589344 |
Semiconductor device and method of producing the same |
Sep. 15, 2009 |
| 7589343 |
Memory and access device and method therefor |
Sep. 15, 2009 |
| 7582889 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Sep. 1, 2009 |
| 7579611 |
Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide |
Aug. 25, 2009 |
| 7579613 |
Thin film fuse phase change RAM and manufacturing method |
Aug. 25, 2009 |
| 7579615 |
Access transistor for memory device |
Aug. 25, 2009 |
| 7572662 |
Method of fabricating phase change RAM including a fullerene layer |
Aug. 11, 2009 |
| 7569845 |
Phase-change memory and fabrication method thereof |
Aug. 4, 2009 |
| 7569430 |
Phase changeable structure and method of forming the same |
Aug. 4, 2009 |
| 7569846 |
Phase-change memory device including nanowires and method of manufacturing the same |
Aug. 4, 2009 |
| 7566895 |
Phase change memory device and method for fabricating the same |
Jul. 28, 2009 |
| 7560724 |
Storage device with reversible resistance change elements |
Jul. 14, 2009 |
| 7554144 |
Memory device and manufacturing method |
Jun. 30, 2009 |
| 7553692 |
Phase-change memory device and method of manufacturing the same |
Jun. 30, 2009 |
| 7550756 |
Semiconductor memory |
Jun. 23, 2009 |
| 7547905 |
Programmable conductor memory cell structure and method therefor |
Jun. 16, 2009 |
| 7547906 |
Multi-functional chalcogenide electronic devices having gain |
Jun. 16, 2009 |
| 7544966 |
Three-terminal electrical bistable devices |
Jun. 9, 2009 |
| 7541609 |
Phase change memory cell having a sidewall contact |
Jun. 2, 2009 |
| 7534625 |
Phase change memory with damascene memory element |
May. 19, 2009 |
| 7534713 |
High density chalcogenide memory cells |
May. 19, 2009 |
| 7531823 |
Electron device, integrated electron device using same, and operating method using same |
May. 12, 2009 |
| 7528402 |
Electrically rewritable non-volatile memory element |
May. 5, 2009 |
| 7521372 |
Method of fabrication of phase-change memory |
Apr. 21, 2009 |
| 7521281 |
Methods of forming phase-changeable memory devices |
Apr. 21, 2009 |
| 7511294 |
Resistive memory element with shortened erase time |
Mar. 31, 2009 |
| 7507985 |
Phase change memory and phase change recording medium |
Mar. 24, 2009 |
| 7498601 |
Phase-change memory device and method of manufacturing same |
Mar. 3, 2009 |
| 7491962 |
Resistance variable memory device with nanoparticle electrode and method of fabrication |
Feb. 17, 2009 |
| 7482616 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
Jan. 27, 2009 |
| 7479649 |
Vacuum jacketed electrode for phase change memory element |
Jan. 20, 2009 |
| 7473597 |
Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures |
Jan. 6, 2009 |
| 7473921 |
Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement |
Jan. 6, 2009 |
| 7470923 |
Semiconductor integrated circuit device |
Dec. 30, 2008 |
| 7462858 |
Fabrication of phase change memory element with phase-change electrodes using conformal deposition |
Dec. 9, 2008 |
| 7459716 |
Resistance change memory device |
Dec. 2, 2008 |
| 7459715 |
Resistance change memory device |
Dec. 2, 2008 |
| 7456480 |
Semiconductor device |
Nov. 25, 2008 |
| 7456421 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods |
Nov. 25, 2008 |
| 7453082 |
Small electrode for a chalcogenide switching device and method for fabricating same |
Nov. 18, 2008 |
| 7439536 |
Phase change memory cell with tubular heater and manufacturing method thereof |
Oct. 21, 2008 |
| 7425720 |
Semiconductor device |
Sep. 16, 2008 |
| 7422917 |
Forming tapered lower electrode phase-change memories |
Sep. 9, 2008 |
| 7420198 |
Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same |
Sep. 2, 2008 |
| 7420200 |
Damascene phase change memory |
Sep. 2, 2008 |
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