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Class Information
Number: 257/E45.002
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Solid-state devices adapted for rectifying, amplifying, oscillating, or switching without potential-jump barrier or surface barrier, e.g., dielectric triodes; ovshinsky-effect devices, processes, or apparatus peculiar to manufacture or treatment thereof, or of parts thereof (epo) > Bistable switching devices, e.g., ovshinsky-effect devices (epo)
Description: This subclass is indented under subclass E45.001. This subclass is substantially the same in scope as ECLA classification H01L45/00B.










Sub-classes under this class:

Class Number Class Name Patents
257/E45.004 N: light-controlled ovshinsky devices (epo) 16
257/E45.003 Switching materials being oxides or nitrides (epo) 160


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
8709834 Methods of fabricating semiconductor device Apr. 29, 2014
8710481 Non-volatile memory cell containing a nano-rail electrode Apr. 29, 2014
8710483 Memristive junction with intrinsic rectifier Apr. 29, 2014
8691622 Memory cells and methods of forming memory cells Apr. 8, 2014
8692225 Resistive memory device and fabrication method thereof Apr. 8, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8686390 Nonvolatile memory element having a variable resistance layer whose resistance value changes according to an applied electric signal Apr. 1, 2014
8685819 Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines Apr. 1, 2014
8680499 Memory cells Mar. 25, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8680502 Amorphous semiconductor layer memory device Mar. 25, 2014
8674332 RRAM device with an embedded selector structure and methods of making same Mar. 18, 2014
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same Mar. 18, 2014
8674336 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays Mar. 18, 2014
8664633 Non-volatile memory devices having resistance changeable elements and related systems and methods Mar. 4, 2014
8664634 Protruding post resistive memory devices Mar. 4, 2014
8659000 Amorphous semiiconductor layer memory device Feb. 25, 2014
8658510 Processing phase change material to improve programming speed Feb. 25, 2014
8652923 Nonvolatile memory device having an electrode interface coupling region Feb. 18, 2014
8653495 Heating phase change material Feb. 18, 2014
8653496 Memory cells Feb. 18, 2014
8648326 Phase change memory electrode with sheath for reduced programming current Feb. 11, 2014
8642988 Non-volatile memory device Feb. 4, 2014
8642987 Semiconductor device and manufacturing method thereof Feb. 4, 2014
8642985 Memory Cell Feb. 4, 2014
8637845 Optimized electrodes for Re-RAM Jan. 28, 2014
8633464 In via formed phase change memory cell with recessed pillar heater Jan. 21, 2014
8623734 Method to selectively grow phase change material inside a via hole Jan. 7, 2014
8624219 Variable impedance memory element structures, methods of manufacture, and memory devices containing the same Jan. 7, 2014
8618612 Integrated circuits based on aligned nanotubes Dec. 31, 2013
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8618524 Phase change memory with various grain sizes Dec. 31, 2013
8614432 Crystalline silicon-based memristive device with multiple mobile dopant species Dec. 24, 2013
8614499 Memory cell having heater material and variable resistance material embedded within insulating material Dec. 24, 2013
8610280 Platinum-containing constructions, and methods of forming platinum-containing constructions Dec. 17, 2013
8604456 Nonvolatile memory device and method of manufacturing the same Dec. 10, 2013
8598562 Memory cell structures Dec. 3, 2013
8598563 Phase-change material and phase-change type memory device Dec. 3, 2013
8592796 Phase-change random access memory device and method of manufacturing the same Nov. 26, 2013
8592795 Multilevel mixed valence oxide (MVO) memory Nov. 26, 2013
8592794 Resistance random access memory element and method for making the same Nov. 26, 2013
8592793 Electrode diffusions in two-terminal non-volatile memory devices Nov. 26, 2013
8592791 Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof Nov. 26, 2013
8592790 Phase-change random access memory device and method of manufacturing the same Nov. 26, 2013
8592619 Bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group Nov. 26, 2013
8586958 Switching element and manufacturing method thereof Nov. 19, 2013
8581364 Resistance memory devices and methods of forming the same Nov. 12, 2013
8581363 Phase-change memory device including a vertically-stacked capacitor and a method of the same Nov. 12, 2013
8581224 Memory cells Nov. 12, 2013
8575585 Memristive device Nov. 5, 2013

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