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Class Information
Number: 257/E45.001
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Solid-state devices adapted for rectifying, amplifying, oscillating, or switching without potential-jump barrier or surface barrier, e.g., dielectric triodes; ovshinsky-effect devices, processes, or apparatus peculiar to manufacture or treatment thereof, or of parts thereof (epo)
Description: This main group provides for solid state devices which change from non-conductive state to semiconductive state to achieve rectification, amplification, oscillation or switching action, upon application of a minimum voltage, and processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L45/00.

Sub-classes under this class:

Class Number Class Name Patents
257/E45.002 Bistable switching devices, e.g., ovshinsky-effect devices (epo) 765
257/E45.005 Charge density wave transport devices (epo) 5
257/E45.006 Solid-state travelling-wave devices (epo) 15

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8692223 Resistance variable memory device including nano particles and method for fabricating the same Apr. 8, 2014
8686384 Memory device and method for manufacturing the same Apr. 1, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8673717 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Mar. 18, 2014
8664631 Nonvolatile memory device Mar. 4, 2014
8659001 Defect gradient to boost nonvolatile memory performance Feb. 25, 2014
8653497 Resistive memory Feb. 18, 2014
8653496 Memory cells Feb. 18, 2014
8652923 Nonvolatile memory device having an electrode interface coupling region Feb. 18, 2014
8633463 Depositing titanium silicon nitride films for forming phase change memories Jan. 21, 2014
8623736 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same Jan. 7, 2014
8618525 Work function tailoring for nonvolatile memory applications Dec. 31, 2013
8614433 Semiconductor devices and methods of manufacturing the same Dec. 24, 2013
8597968 Active device array substrate Dec. 3, 2013
8598560 Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices Dec. 3, 2013
8581222 Phase change memory device comprising bismuth-tellurium nanowires Nov. 12, 2013
8569734 Forming resistive random access memories together with fuse arrays Oct. 29, 2013
8552412 Variable resistance memory device and method of forming the same Oct. 8, 2013
8546779 Resistance change memory and manufacturing method thereof Oct. 1, 2013
8547721 Resistive memory device Oct. 1, 2013
8546781 Nitrogen doped aluminum oxide resistive random access memory Oct. 1, 2013
8541765 Resistance variable memory cell structures and methods Sep. 24, 2013
8536015 Memory cell that includes a carbon-based memory element and methods of forming the same Sep. 17, 2013
8536558 RRAM structure with improved memory margin Sep. 17, 2013
8536561 Memory cells and memory cell arrays Sep. 17, 2013
8536562 Methods of forming memory structures and methods of forming memory arrays Sep. 17, 2013
8530879 Semiconductor memory device Sep. 10, 2013
8530878 Memory arrays and methods of forming memory cells Sep. 10, 2013
8507888 Nonvolatile memory device and method for manufacturing same Aug. 13, 2013
8508976 Nonvolatile memory element and nonvolatile memory device Aug. 13, 2013
8508980 Polarity dependent switch for resistive sense memory Aug. 13, 2013
8502183 Semiconductor memory device including memory cell having rectifying element and switching element Aug. 6, 2013
8502185 Switching device having a non-linear element Aug. 6, 2013
8487293 Bipolar switching memory cell with built-in "on "state rectifying current-voltage characteristics Jul. 16, 2013
8462539 Resistive memory element and use thereof Jun. 11, 2013
8450709 Nonvolatile resistance change device May. 28, 2013
8450716 Resistive memory May. 28, 2013
8440990 Nonvolatile memory device having an electrode interface coupling region May. 14, 2013
8441000 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 14, 2013
8421051 Resistance-change memory Apr. 16, 2013
8415653 Single mask adder phase change memory element Apr. 9, 2013
8416603 Nonvolatile memory device Apr. 9, 2013
8399874 Vertical nonvolatile memory device including a selective diode Mar. 19, 2013
8399307 Interconnects for stacked non-volatile memory device and method Mar. 19, 2013
8395140 Cross-point memory utilizing Ru/Si diode Mar. 12, 2013
8357952 Power semiconductor structure with field effect rectifier and fabrication method thereof Jan. 22, 2013
8344343 Composite film for phase change memory devices Jan. 1, 2013
8338224 Resistance-type random access memory device having three-dimensional bit line and word line patterning Dec. 25, 2012
8339834 Non-volatile semiconductor memory device including a variable resistance element Dec. 25, 2012
8331131 Changing a memristor state Dec. 11, 2012

1 2 3 4 5

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