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Class Information
Number: 257/E43.005
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor or solid-state devices using galvano-magnetic or similar magnetic effects, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) > Selection of materials (epo)
Description: This subclass is indented under subclass E43.001. This subclass is substantially the same in scope as ECLA classification H01L43/10.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8686525 Magnetic sensor and magnetic memory Apr. 1, 2014
8680592 Method of forming a magnetic tunnel junction device Mar. 25, 2014
8670268 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8466526 Hall sensor for eliminating offset voltage Jun. 18, 2013
8378437 Magnetoresistive effect element and magnetic random access memory Feb. 19, 2013
8378330 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same Feb. 19, 2013
8188558 ST-RAM magnetic element configurations to reduce switching current May. 29, 2012
7999336 ST-RAM magnetic element configurations to reduce switching current Aug. 16, 2011
7825486 Memory cell and memory device Nov. 2, 2010
7821088 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization Oct. 26, 2010
7772659 Magnetic device having perpendicular magnetization and interaction compensating interlayer Aug. 10, 2010
7723813 Method and structure for improved alignment in MRAM integration May. 25, 2010
7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization May. 12, 2009
7531830 Spin-polarization devices using rare earth-transition metal alloys May. 12, 2009
7449345 Capping structure for enhancing dR/R of the MTJ device Nov. 11, 2008
7230265 Spin-polarization devices using rare earth-transition metal alloys Jun. 12, 2007
7068477 Magnetoresistive film with nickel iron alloy soft magnetic layer having face and body-centered cubic lattice crystals Jun. 27, 2006
7042686 Magnetoresistive element and method for producing the same May. 9, 2006
7034348 Magnetoresistive effect element and magnetic memory device Apr. 25, 2006
7034091 Combinatorial synthesis and screening of non-biological polymers Apr. 25, 2006
6985066 Controlled electron mobility galvanomagnetic devices Jan. 10, 2006
6893946 Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured May. 17, 2005
6893741 Magnetic device with improved antiferromagnetically coupling film May. 17, 2005
6864201 Preparation and screening of crystalline zeolite and hydrothermally-synthesized materials Mar. 8, 2005
6828897 Methods and compositions for optimizing interfacial properties of magnetoresistive sensors Dec. 7, 2004
6794052 Polymer arrays from the combinatorial synthesis of novel materials Sep. 21, 2004
6784509 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus Aug. 31, 2004
6771473 Magnetoresistive element and method for producing the same Aug. 3, 2004
6686205 Screening combinatorial arrays of inorganic materials with spectroscopy or microscopy Feb. 3, 2004
6680831 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film Jan. 20, 2004
6649413 Synthesis and screening combinatorial arrays of zeolites Nov. 18, 2003
6597547 Magnetoresistive device with an .alpha.-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness Jul. 22, 2003
6590389 Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof Jul. 8, 2003
6562486 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film May. 13, 2003
6496338 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias Dec. 17, 2002
6455178 Exchange coupling film and magnetoresistive element Sep. 24, 2002
6420179 Combinatorial sythesis of organometallic materials Jul. 16, 2002
6410331 Combinatorial screening of inorganic and organometallic materials Jun. 25, 2002
6395388 Magnetoresistance effect element May. 28, 2002
6387550 Giant magnetoresistive material film, method of producing the same and magnetic head using the same May. 14, 2002
6387548 Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element May. 14, 2002
6361863 Device having magnetoresistive material Mar. 26, 2002
6353317 Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography Mar. 5, 2002
6346290 Combinatorial synthesis of novel materials Feb. 12, 2002
6340520 Giant magnetoresistive material film, method of producing the same magnetic head using the same Jan. 22, 2002
6335578 Brushless DC motor Jan. 1, 2002
6326090 Combinatorial synthesis of novel materials Dec. 4, 2001
6301089 Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer Oct. 9, 2001
6295186 Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias Sep. 25, 2001
6258470 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film Jul. 10, 2001

1 2 3 4










 
 
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