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Class Information
Number: 257/E43.004
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor or solid-state devices using galvano-magnetic or similar magnetic effects, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) > Magnetic-field-controlled resistors (epo)
Description: This subclass is indented under subclass E43.001. This subclass is substantially the same in scope as ECLA classification H01L43/08.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8710602 Method and system for providing magnetic junctions having improved characteristics Apr. 29, 2014
8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Apr. 22, 2014
8692343 MR enhancing layer (MREL) for spintronic devices Apr. 8, 2014
8680592 Method of forming a magnetic tunnel junction device Mar. 25, 2014
8680632 Magnetoresistive element and magnetic memory Mar. 25, 2014
8674466 Magnetic random access memory with selective toggle memory cells Mar. 18, 2014
8629519 Tunneling magnetoresistance sensor Jan. 14, 2014
8619467 High GMR structure with low drive fields Dec. 31, 2013
8530887 Magnetoresistive element, method of manufacturing the same, and magnetic memory Sep. 10, 2013
8513748 Magnetoresistive device and magnetic memory using the same Aug. 20, 2013
8482966 Magnetic element utilizing protective sidewall passivation Jul. 9, 2013
8477531 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current Jul. 2, 2013
8466526 Hall sensor for eliminating offset voltage Jun. 18, 2013
8378330 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same Feb. 19, 2013
8331140 Current injection magnetic domain wall moving element Dec. 11, 2012
8227896 Resistive switching in nitrogen-doped MgO Jul. 24, 2012
8207587 Magnetic sensor and manufacturing method therefor Jun. 26, 2012
8188558 ST-RAM magnetic element configurations to reduce switching current May. 29, 2012
7999336 ST-RAM magnetic element configurations to reduce switching current Aug. 16, 2011
7999360 Underlayer for high performance magnetic tunneling junction MRAM Aug. 16, 2011
7973351 Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same Jul. 5, 2011
7936030 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween May. 3, 2011
7867788 Spin-dependent tunnelling cell and method of formation thereof Jan. 11, 2011
7851840 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier Dec. 14, 2010
7848136 Magnetic memory Dec. 7, 2010
7833806 Structure and method for fabricating cladded conductive lines in magnetic memories Nov. 16, 2010
7825486 Memory cell and memory device Nov. 2, 2010
7820455 Method for manufacturing a tunnel junction magnetoresistive sensor with improved performance and having a CoFeB free layer Oct. 26, 2010
7821088 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization Oct. 26, 2010
7816746 Spin-tunnel transistor and magnetic reproducing head Oct. 19, 2010
7811833 Method of manufacturing a multi-purpose magnetic film structure Oct. 12, 2010
7781816 Nonvolatile magnetic memory device and photomask Aug. 24, 2010
7772679 Magnetic shielding package structure of a magnetic memory device Aug. 10, 2010
7772663 Method and apparatus for bitline and contact via integration in magnetic random access memory arrays Aug. 10, 2010
7772659 Magnetic device having perpendicular magnetization and interaction compensating interlayer Aug. 10, 2010
7745893 Magnetic transistor structure Jun. 29, 2010
7727409 Magnetoresistance effect device and method of production thereof Jun. 1, 2010
7635903 Oscillator and method of manufacture Dec. 22, 2009
7564110 Electrical lapping guides made from tunneling magnetoresistive (TMR) material Jul. 21, 2009
7542335 Magnetic storage device using ferromagnetic tunnel junction element Jun. 2, 2009
7538402 Magnetoresistive device and magnetic memory using the same May. 26, 2009
7531823 Electron device, integrated electron device using same, and operating method using same May. 12, 2009
7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization May. 12, 2009
7473951 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same Jan. 6, 2009
7456082 Method for producing silicon single crystal and silicon single crystal Nov. 25, 2008
7453084 Spin transistor with ultra-low energy base-collector barrier Nov. 18, 2008
7422912 Magnetic memory device and methods for making same Sep. 9, 2008
7388268 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method Jun. 17, 2008
7381573 Self-aligned, low-resistance, efficient memory array Jun. 3, 2008
7378698 Magnetic tunnel junction and memory device including the same May. 27, 2008

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