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Class Information
Number: 257/E33.05
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by their operation (epo) > Having heterojunction or graded gap (epo) > Comprising only group ii-iv compound (epo)
Description: This subclass is indented under subclass E33.048. This subclass is substantially the same in scope as ECLA classification H01L33/00D3C.

Patents under this class:

Patent Number Title Of Patent Date Issued
8309986 Tri-gate field-effect transistors formed by aspect ratio trapping Nov. 13, 2012
8293382 Semiconductor light-emitting device having stacked transparent electrodes Oct. 23, 2012
8101960 Nitride light emitting device and manufacturing method thereof Jan. 24, 2012
7977706 Tri-gate field-effect transistors formed by aspect ratio trapping Jul. 12, 2011
7772586 Optical semiconductor devices on InP substrate Aug. 10, 2010
7115217 Phosphor for light sources and associated light source Oct. 3, 2006
6831307 Semiconductor mounting system Dec. 14, 2004
6407405 p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals Jun. 18, 2002
5371409 Wide bandgap semiconductor light emitters Dec. 6, 1994
4868615 Semiconductor light emitting device using group I and group VII dopants Sep. 19, 1989
4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process Oct. 23, 1979
4122407 Heterostructure junction light emitting or responding or modulating devices Oct. 24, 1978
4117504 Heterogeneous semiconductor structure with composition gradient and method for producing same Sep. 26, 1978

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