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Class Information
Number: 257/E33.04
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group i-iii-vi compound (epo)
Description: This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F4.

Patents under this class:

Patent Number Title Of Patent Date Issued
8624260 Enhancement-mode GaN MOSFET with low leakage current and improved reliability Jan. 7, 2014
8546178 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device Oct. 1, 2013
8101465 Method of fabricating a semiconductor device with a back electrode Jan. 24, 2012
7768031 Light emitting device and method of producing a light emitting device Aug. 3, 2010
7651927 Semiconductor device and method for fabricating the same Jan. 26, 2010
7646024 Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface Jan. 12, 2010
7560747 Light-emitting device having improved light output Jul. 14, 2009
7498593 Terahertz radiation sources and methods Mar. 3, 2009
5523022 Semiconductor compound Jun. 4, 1996
5490953 Semiconductor compound Feb. 13, 1996
5427716 Compound semiconductors and semiconductor light-emitting devices using the same Jun. 27, 1995
5250814 Semiconductor light-emitting devices Oct. 5, 1993
5122844 Quantum well structure and semiconductor device using the same Jun. 16, 1992
5091758 Semiconductor light-emitting devices Feb. 25, 1992
5008891 Semiconductor light-emitting devices Apr. 16, 1991
4992837 Light emitting semiconductor device Feb. 12, 1991
4004342 Fabrication of ion implanted P-N junction devices Jan. 25, 1977
3978510 Heterojunction photovoltaic devices employing I-III-VI compounds Aug. 31, 1976

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