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Class Information
Number: 257/E33.036
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iv compound (e.g., sic) (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E33.035. This subclass is substantially the same in scope as ECLA classification H01L33/00C4E2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8575594 |
Light emitting diode having a barrier layer with a superlattice structure |
Nov. 5, 2013 |
| 8154008 |
Light emitting diode with improved structure |
Apr. 10, 2012 |
| 7872269 |
Gallium nitride semiconductor light emitting element |
Jan. 18, 2011 |
| 7855385 |
SiC crystal and semiconductor device |
Dec. 21, 2010 |
| 7675079 |
Diamond coating of silicon-carbide LEDs |
Mar. 9, 2010 |
| 5389799 |
Semiconductor device |
Feb. 14, 1995 |
| 5187547 |
Light emitting diode device and method for producing same |
Feb. 16, 1993 |
| 5107538 |
Optical waveguide system comprising a rare-earth Si-based optical device |
Apr. 21, 1992 |
| 5063421 |
Silicon carbide light emitting diode having a pn junction |
Nov. 5, 1991 |
| 5027168 |
Blue light emitting diode formed in silicon carbide |
Jun. 25, 1991 |
| 4594528 |
Thin film electroluminescence device and method of manufacturing the same |
Jun. 10, 1986 |
| 3999206 |
Semiconductor indicating device and method for production of same |
Dec. 21, 1976 |
| 3986193 |
Semiconductor SiCl light source and a method of manufacturing same |
Oct. 12, 1976 |
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