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Class Information
Number: 257/E33.036
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iv compound (e.g., sic) (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E33.035. This subclass is substantially the same in scope as ECLA classification H01L33/00C4E2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8575594 Light emitting diode having a barrier layer with a superlattice structure Nov. 5, 2013
8154008 Light emitting diode with improved structure Apr. 10, 2012
7872269 Gallium nitride semiconductor light emitting element Jan. 18, 2011
7855385 SiC crystal and semiconductor device Dec. 21, 2010
7675079 Diamond coating of silicon-carbide LEDs Mar. 9, 2010
5389799 Semiconductor device Feb. 14, 1995
5187547 Light emitting diode device and method for producing same Feb. 16, 1993
5107538 Optical waveguide system comprising a rare-earth Si-based optical device Apr. 21, 1992
5063421 Silicon carbide light emitting diode having a pn junction Nov. 5, 1991
5027168 Blue light emitting diode formed in silicon carbide Jun. 25, 1991
4594528 Thin film electroluminescence device and method of manufacturing the same Jun. 10, 1986
3999206 Semiconductor indicating device and method for production of same Dec. 21, 1976
3986193 Semiconductor SiCl light source and a method of manufacturing same Oct. 12, 1976











 
 
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