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Class Information
Number: 257/E33.035
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iv compound (e.g., sic) (epo)
Description: This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4E.










Sub-classes under this class:

Class Number Class Name Patents
257/E33.036 Characterized by doping material (epo) 13


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8680537 Nitride semiconductor element and nitride semiconductor wafer Mar. 25, 2014
8367510 Process for producing silicon carbide semiconductor device Feb. 5, 2013
8304784 Illumination device Nov. 6, 2012
8299488 LED chip Oct. 30, 2012
8222674 Semiconductor device having a group-III nitride superlattice layer on a silicon substrate Jul. 17, 2012
7989926 Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof Aug. 2, 2011
7811943 Process for producing silicon carbide crystals having increased minority carrier lifetimes Oct. 12, 2010
7750364 Light-emitting device Jul. 6, 2010
7646025 Diamond LED devices and associated methods Jan. 12, 2010
7592618 Nanoparticle electroluminescence and method of manufacturing the same Sep. 22, 2009
7531840 Light emitting diode with metal coupling structure May. 12, 2009
7304334 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Dec. 4, 2007
7020372 Optical devices with engineered nonlinear nanocomposite materials Mar. 28, 2006
6961499 Optical devices with engineered nonlinear nanocomposite materials Nov. 1, 2005
6943376 Electrode for p-type SiC Sep. 13, 2005
6927422 Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters Aug. 9, 2005
6924510 Silicon and silicon/germanium light-emitting device, methods and systems Aug. 2, 2005
6909119 Low temperature formation of backside ohmic contacts for vertical devices Jun. 21, 2005
6884644 Low temperature formation of backside ohmic contacts for vertical devices Apr. 26, 2005
6819845 Optical devices with engineered nonlinear nanocomposite materials Nov. 16, 2004
6803243 Low temperature formation of backside ohmic contacts for vertical devices Oct. 12, 2004
6794684 Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same Sep. 21, 2004
6690027 Method for making a device comprising layers of planes of quantum dots Feb. 10, 2004
6632694 Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters Oct. 14, 2003
6403975 Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates Jun. 11, 2002
6210987 Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof Apr. 3, 2001
5939732 Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof Aug. 17, 1999
5912477 High efficiency light emitting diodes Jun. 15, 1999
5834378 Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on same Nov. 10, 1998
5757024 Buried porous silicon-germanium layers in monocrystalline silicon lattices May. 26, 1998
5631190 Method for producing high efficiency light-emitting diodes and resulting diode structures May. 20, 1997
5604135 Method of forming green light emitting diode in silicon carbide Feb. 18, 1997
5569932 Porous silicon carbide (SIC) semiconductor device Oct. 29, 1996
5523592 Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same Jun. 4, 1996
5454915 Method of fabricating porous silicon carbide (SiC) Oct. 3, 1995
5427977 Method for manufacturing porous semiconductor light emitting device Jun. 27, 1995
5416342 Blue light-emitting diode with high external quantum efficiency May. 16, 1995
5387804 Light emitting diode Feb. 7, 1995
5376241 Fabricating porous silicon carbide Dec. 27, 1994
5338944 Blue light-emitting diode with degenerate junction structure Aug. 16, 1994
5331180 Porous semiconductor light emitting device Jul. 19, 1994
5329141 Light emitting diode Jul. 12, 1994
5319220 Silicon carbide semiconductor device Jun. 7, 1994
5313078 Multi-layer silicon carbide light emitting diode having a PN junction May. 17, 1994
5298767 Porous silicon carbide (SiC) semiconductor device Mar. 29, 1994
5273933 Vapor phase growth method of forming film in process of manufacturing semiconductor device Dec. 28, 1993
5243204 Silicon carbide light emitting diode and a method for the same Sep. 7, 1993
5200805 Silicon carbide:metal carbide alloy semiconductor and method of making the same Apr. 6, 1993
5027168 Blue light emitting diode formed in silicon carbide Jun. 25, 1991
4918497 Blue light emitting diode formed in silicon carbide Apr. 17, 1990

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