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Class Information
Number: 257/E33.033
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iii-v compound (epo) > Including ternary or quaternary compound (e.g., algaas) (epo) > Comprising nitride compound (e.g., algan) (epo)
Description: This subclass is indented under subclass E33.031. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612363 |
N-type group III nitride semiconductor stacked layer structure |
Nov. 3, 2009 |
| 7601985 |
Semiconductor light-emitting device |
Oct. 13, 2009 |
| 7589345 |
Nitride-based compound semiconductor substrate and method for fabricating the same |
Sep. 15, 2009 |
| 7560725 |
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
Jul. 14, 2009 |
| 7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
Jun. 30, 2009 |
| 7547910 |
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device |
Jun. 16, 2009 |
| 7531827 |
Gallium nitride-based light emitting diode and fabrication method thereof |
May. 12, 2009 |
| 7531841 |
Nitride-based semiconductor light emitting device |
May. 12, 2009 |
| 7518139 |
Gallium nitride-based device and method |
Apr. 14, 2009 |
| 7511307 |
Light emitting device |
Mar. 31, 2009 |
| 7485901 |
Highly doped III-nitride semiconductors |
Feb. 3, 2009 |
| 7462884 |
Nitride semiconductor device |
Dec. 9, 2008 |
| 7432534 |
III-nitride semiconductor light emitting device |
Oct. 7, 2008 |
| 7408183 |
Low cost InGaAIN based lasers |
Aug. 5, 2008 |
| 7374959 |
Two-wavelength semiconductor laser device and method of manufacturing the same |
May. 20, 2008 |
| 7307292 |
Semiconductor device and method for fabricating the same |
Dec. 11, 2007 |
| 7271404 |
Group III-V nitride-based semiconductor substrate and method of making same |
Sep. 18, 2007 |
| 7161301 |
Nitride light-emitting device having an adhesive reflecting layer |
Jan. 9, 2007 |
| 7087922 |
Light-emitting diode structure |
Aug. 8, 2006 |
| 6284395 |
Nitride based semiconductors and devices |
Sep. 4, 2001 |
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