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Class Information
Number: 257/E33.033
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iii-v compound (epo) > Including ternary or quaternary compound (e.g., algaas) (epo) > Comprising nitride compound (e.g., algan) (epo)
Description: This subclass is indented under subclass E33.031. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6C.










Sub-classes under this class:

Class Number Class Name Patents
257/E33.034 With heterojunction (e.g., algan/gan) (epo) 165


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8679248 GaN whiskers and methods of growing them from solution Mar. 25, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8674381 Nitride semiconductor light emitting device Mar. 18, 2014
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8664693 Light emitting diode having algan buffer layer and method of fabricating the same Mar. 4, 2014
8648350 Gallium nitride compound semiconductor light-emitting device Feb. 11, 2014
8637960 Nitride semiconductor substrate Jan. 28, 2014
8618571 Semiconductor light emitting device having a reflective layer Dec. 31, 2013
8613802 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal Dec. 24, 2013
8610117 Light emitting device and electronic equipment Dec. 17, 2013
8598599 Group III nitride semiconductor light-emitting device Dec. 3, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8575593 Semiconductor light emitting device and fabrication method thereof Nov. 5, 2013
8558264 Light-emitting device and projector Oct. 15, 2013
8548021 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser Oct. 1, 2013
8541772 Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device Sep. 24, 2013
8541796 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device Sep. 24, 2013
8519414 III-nitride based semiconductor structure with multiple conductive tunneling layer Aug. 27, 2013
8519416 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device Aug. 27, 2013
8492776 Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light Jul. 23, 2013
8470626 Method of fabricating light emitting diode Jun. 25, 2013
8449672 Method of growing group III nitride crystals May. 28, 2013
8445938 Nitride semi-conductive light emitting device May. 21, 2013
8421100 Nitride semiconductor light emitting device and method of manufacturing the same Apr. 16, 2013
8395263 Semiconductor light emitting device and method for manufacturing the same Mar. 12, 2013
8368095 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device Feb. 5, 2013
8367441 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device Feb. 5, 2013
8357607 Method for fabricating nitride-based semiconductor device having electrode on m-plane Jan. 22, 2013
8344356 Semiconductor material, method of making the same, and semiconductor device Jan. 1, 2013
8334199 Method for fabricating nitride-based semiconductor device having electrode on m-plane Dec. 18, 2012
8318594 Method for fabricating nitride-based semiconductor device having electrode on m-plane Nov. 27, 2012
8319235 Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device Nov. 27, 2012
8314427 Light emitting device and electronic equipment Nov. 20, 2012
8309984 Nitride-based semiconductor device having electrode on m-plane Nov. 13, 2012
8304802 Nitride-based semiconductor device having electrode on m-plane Nov. 6, 2012
8299490 Nitride-based semiconductor device having electrode on m-plane Oct. 30, 2012
8274069 Nitride semiconductor light emitting device Sep. 25, 2012
8263990 Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element Sep. 11, 2012
8253125 Semiconductor light emitting device and method of manufacturing the same Aug. 28, 2012
8207556 Group III nitride semiconductor device and epitaxial substrate Jun. 26, 2012
8174035 Nitride-based semiconductor light emitting device May. 8, 2012
8148753 Compound semiconductor substrate having multiple buffer layers Apr. 3, 2012
8143650 Semiconductor device having resistance layer formed on side surface of semiconductor layer Mar. 27, 2012
8124993 Selective decomposition of nitride semiconductors to enhance LED light extraction Feb. 28, 2012
8110848 Substrate for epitaxy and method of preparing the same Feb. 7, 2012
8101939 GaN single-crystal substrate and method for producing GaN single crystal Jan. 24, 2012
8093685 Nitride compound semiconductor element Jan. 10, 2012
8093625 Nitride semiconductor light emitting device and method for fabricating the same Jan. 10, 2012
8093606 Nitride semiconductor light emitting device Jan. 10, 2012
8076685 Nitride semiconductor device having current confining layer Dec. 13, 2011

1 2 3










 
 
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