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Class Information
Number: 257/E33.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iii-v compound (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E33.023. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D4.










Sub-classes under this class:

Class Number Class Name Patents
257/E33.03 Nitride compound (epo) 173


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8669585 LED that has bounding silicon-doped regions on either side of a strain release layer Mar. 11, 2014
8623683 Method of fabricating a nitride semiconductor light emitting device Jan. 7, 2014
8598599 Group III nitride semiconductor light-emitting device Dec. 3, 2013
8476671 Light emitting device, light emitting device package, and lighting device Jul. 2, 2013
8441024 Semiconductor light emitting device and method for manufacturing the same May. 14, 2013
8354689 Light emitting devices having dopant front loaded tunnel barrier layers Jan. 15, 2013
8330174 LED having current spreading layer Dec. 11, 2012
8231726 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate Jul. 31, 2012
8178887 Semiconductor light emitting device and method for manufacturing the same May. 15, 2012
8044430 Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration Oct. 25, 2011
7989832 Light emitting device and manufacturing method thereof Aug. 2, 2011
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7897422 Semiconductor light-emitting device and a method to produce the same Mar. 1, 2011
7897993 GaN based luminescent device on a metal substrate Mar. 1, 2011
7888693 Semiconductor light emitting device and method for manufacturing the same Feb. 15, 2011
7700961 Semiconductor light emitting device and method for manufacturing the same Apr. 20, 2010
7622745 Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device Nov. 24, 2009
7601985 Semiconductor light-emitting device Oct. 13, 2009
7508011 Semiconductor light generating device Mar. 24, 2009
7294867 Semiconductor light generating device Nov. 13, 2007
7193236 Light emitting device using nitride semiconductor and fabrication method of the same Mar. 20, 2007
7190004 Light emitting device Mar. 13, 2007
7122846 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) Oct. 17, 2006
7105850 GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Sep. 12, 2006
7005682 Semiconductor light emitting element Feb. 28, 2006
6991955 Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same Jan. 31, 2006
6879614 Optical semiconductor device having an active layer containing N Apr. 12, 2005
6841406 Methods and apparatus for a semiconductor device Jan. 11, 2005
6819695 Dopant diffusion barrier layer for use in III-V structures Nov. 16, 2004
6815736 Isoelectronic co-doping Nov. 9, 2004
6794731 Minority carrier semiconductor devices with improved reliability Sep. 21, 2004
6781158 Light emitting element and method for manufacturing thereof Aug. 24, 2004
6706542 Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication Mar. 16, 2004
6692837 Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film Feb. 17, 2004
6653213 Structure and method for doping of III-V compounds Nov. 25, 2003
6583449 Semiconductor device and method of forming a semiconductor device Jun. 24, 2003
6537838 Forming semiconductor structures including activated acceptors in buried p-type III-V layers Mar. 25, 2003
6528823 Semiconductor light-emitting element and method of manufacturing the same Mar. 4, 2003
6469314 Thin multi-well active layer LED with controlled oxygen doping Oct. 22, 2002
6449299 Optical semiconductor device having an active layer containing N Sep. 10, 2002
6437374 Semiconductor device and method of forming a semiconductor device Aug. 20, 2002
6437372 Diffusion barrier spikes for III-V structures Aug. 20, 2002
6410943 Light emitting device contact layers having substantially equal spreading resistance and method of manufacture Jun. 25, 2002
6410944 Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors Jun. 25, 2002
6388274 Epitaxial wafer for infrared light-emitting device and light-emitting device using the same May. 14, 2002
6384429 Light-emitting semiconductor device with reduced obstructions to light emission May. 7, 2002
6377598 Semiconductor light-emitting device and method for producing the same Apr. 23, 2002
6351480 Semiconductor light emitting device and method for producing the same Feb. 26, 2002
6351479 Semiconductor laser having effective output increasing function Feb. 26, 2002
6348703 Epitaxial wafer for infrared light-emitting device and light-emitting device using the same Feb. 19, 2002

1 2 3










 
 
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