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Class Information
Number: 257/E33.025
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iii-v compound (epo) > Binary compound (e.g., gaas) (epo) > Including nitride (e.g., gan) (epo)
Description: This subclass is indented under subclass E33.024. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D2B.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8685767 Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes Apr. 1, 2014
8685772 Method of manufacturing light emitting diode and light emitting diode manufactured thereby Apr. 1, 2014
8686397 Low droop light emitting diode structure on gallium nitride semipolar substrates Apr. 1, 2014
8686430 Buffer layer for GaN-on-Si LED Apr. 1, 2014
8686455 Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof Apr. 1, 2014
8680571 Gallium nitride based light emitting diode Mar. 25, 2014
8679883 Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure Mar. 25, 2014
8679248 GaN whiskers and methods of growing them from solution Mar. 25, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8674398 Group III nitride semiconductor light emitting device and production method thereof, and lamp Mar. 18, 2014
8674381 Nitride semiconductor light emitting device Mar. 18, 2014
8674375 Roughened high refractive index layer/LED for high light extraction Mar. 18, 2014
8673677 Method for producing group III nitride semiconductor light emitting element Mar. 18, 2014
8669129 Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp Mar. 11, 2014
8669560 Light-emitting device, light-emitting device package and lighting system Mar. 11, 2014
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor Mar. 4, 2014
8664028 Semiconductor device production process Mar. 4, 2014
8659029 Low contact resistance semiconductor structure and method of fabricating the same Feb. 25, 2014
8653538 Rod type light emitting device and method for fabricating the same Feb. 18, 2014
8648348 Light emitting device, light emitting device package, and lighting system Feb. 11, 2014
8648350 Gallium nitride compound semiconductor light-emitting device Feb. 11, 2014
8643059 Substrate structure and method of manufacturing the same Feb. 4, 2014
8637334 High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution Jan. 28, 2014
8637960 Nitride semiconductor substrate Jan. 28, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8624278 Light emitting device with current blocking layer Jan. 7, 2014
8618564 High efficiency light emitting diodes Dec. 31, 2013
8613802 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal Dec. 24, 2013
8604488 Light emitting diode and fabricating method thereof Dec. 10, 2013
8604496 Optical semiconductor device Dec. 10, 2013
8598599 Group III nitride semiconductor light-emitting device Dec. 3, 2013
8592839 Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same Nov. 26, 2013
8592800 Optical devices featuring nonpolar textured semiconductor layers Nov. 26, 2013
8592309 Laser spike annealing for GaN LEDs Nov. 26, 2013
8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy Nov. 26, 2013
8587022 Nitride semiconductor light-emitting element and process for production thereof Nov. 19, 2013
8580668 Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer Nov. 12, 2013
8580593 Epitaxial formation structures and associated methods of manufacturing solid state lighting devices Nov. 12, 2013
8574935 Manufacturing method of solid state light emitting element Nov. 5, 2013
8563999 Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer Oct. 22, 2013
8558264 Light-emitting device and projector Oct. 15, 2013
8552531 Nitride-based compound semiconductor and nitride-based compound semiconductor device Oct. 8, 2013
8541796 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device Sep. 24, 2013
8536026 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same Sep. 17, 2013
8530256 Production process for semiconductor device Sep. 10, 2013
8525196 Nitride-based semiconductor light emitting diode Sep. 3, 2013
8519416 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device Aug. 27, 2013
8513036 Photonic quantum ring laser and fabrication method thereof Aug. 20, 2013
8513040 Method for manufacturing display device Aug. 20, 2013
8507947 High quality GaN high-voltage HFETS on silicon Aug. 13, 2013

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