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Class Information
Number: 257/E33.022
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group ii-vi compound (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E33.019. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C3.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8623683 Method of fabricating a nitride semiconductor light emitting device Jan. 7, 2014
8502263 Light-emitter-based devices with lattice-mismatched semiconductor structures Aug. 6, 2013
8436351 ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device May. 7, 2013
8334542 Light emitting diode and manufacturing method thereof Dec. 18, 2012
8076694 Nitride semiconductor element having a silicon substrate and a current passing region Dec. 13, 2011
7915634 Laser diode epitaxial wafer and method for producing same Mar. 29, 2011
7728347 ZnO layer and semiconductor light emitting device Jun. 1, 2010
7612432 P-type ZnS based semiconductor material having a low resistance due to its high copper content Nov. 3, 2009
7208770 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) Apr. 24, 2007
7033435 Process for preparing p-n junctions having a p-type ZnO film Apr. 25, 2006
7002179 ZnO system semiconductor device Feb. 21, 2006
6858869 White color light emitting device Feb. 22, 2005
6815736 Isoelectronic co-doping Nov. 9, 2004
6610141 Zinc oxide films containing p-type dopant and process for preparing same Aug. 26, 2003
6475825 Process for preparing zinc oxide films containing p-type dopant Nov. 5, 2002
6456639 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same Sep. 24, 2002
6414975 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same Jul. 2, 2002
6410162 Zinc oxide films containing P-type dopant and process for preparing same Jun. 25, 2002
6407405 p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals Jun. 18, 2002
6342313 Oxide films and process for preparing same Jan. 29, 2002
6291085 Zinc oxide films containing P-type dopant and process for preparing same Sep. 18, 2001
5998809 Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter Dec. 7, 1999
5943355 Semiconductor light emitting device Aug. 24, 1999
5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor Feb. 2, 1999
5834792 Articles comprising doped semiconductor material Nov. 10, 1998
5776793 Method of fabricating opto-electronic device Jul. 7, 1998
5772759 Process for producing p-type doped layers, in particular, in II-VI semiconductors Jun. 30, 1998
5740193 Semiconductor light-emitting device Apr. 14, 1998
5657336 Semiconductor light-emitting device Aug. 12, 1997
5574296 Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer Nov. 12, 1996
5538918 Method of fabricating a buried-ridge II-VI laser diode Jul. 23, 1996
5538918 Method of fabricating a buried-ridge II-VI laser diode Jul. 23, 1996
5513199 Blue-green laser diode Apr. 30, 1996
5488234 Semiconductor element having bivalent and VI group element and an insulating layer Jan. 30, 1996
5404027 Buried ridge II-VI laser diode Apr. 4, 1995
5396103 Graded composition ohmic contact for P-type II-VI semiconductors Mar. 7, 1995
5382813 Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers Jan. 17, 1995
5291507 Blue-green laser diode Mar. 1, 1994
5274269 Ohmic contact for p-type group II-IV compound semiconductors Dec. 28, 1993
5274248 Light-emitting device with II-VI compounds Dec. 28, 1993
5252499 Wide band-gap semiconductors having low bipolar resistivity and method of formation Oct. 12, 1993
5248631 Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals Sep. 28, 1993
5237182 Electroluminescent device of compound semiconductor with buffer layer Aug. 17, 1993
5234842 Method of producing p-typed CdS Aug. 10, 1993
5213998 Method for making an ohmic contact for p-type group II-VI compound semiconductors May. 25, 1993
5198690 Electroluminescent device of II-IV compound semiconductor Mar. 30, 1993
5187116 Process for preparing electroluminescent device of compound semiconductor Feb. 16, 1993
5150191 P-type II-VI compound semiconductor doped Sep. 22, 1992
5140385 Light emitting element and method of manufacture Aug. 18, 1992
5113233 Compound semiconductor luminescent device May. 12, 1992

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