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Class Information
Number: 257/E33.021
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group ii-vi compound (epo) > Ternary or quaternary compound (e.g., cdhgte) (epo) > With heterojunction (epo)
Description: This subclass is indented under subclass E33.02. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C2B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8148731 Films and structures for metal oxide semiconductor light emitting devices and methods Apr. 3, 2012
7859106 Multilayer printed circuit board using paste bumps Dec. 28, 2010
7772586 Optical semiconductor devices on InP substrate Aug. 10, 2010
7525128 Zinc-oxide-based double-heterostructure light-emitting diode Apr. 28, 2009
7335920 LED with current confinement structure and surface roughening Feb. 26, 2008
7145180 Method of fabricating a light emitting device, and light emitting device Dec. 5, 2006
7045871 II-VI compound semiconductor crystal and photoelectric conversion device May. 16, 2006
7042016 Semiconductor optical device, method of forming contact in semiconductor optical device May. 9, 2006
6987029 ZnO based compound semiconductor light emitting device and method for manufacturing the same Jan. 17, 2006
6982438 Light emitting device and method for fabricating the same Jan. 3, 2006
6965126 Light-emitting element Nov. 15, 2005
6933519 II-VI compound semiconductor crystal Aug. 23, 2005
6903374 Structure of p-electrode at the light-emerging side of light-emitting diode Jun. 7, 2005
6893950 Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof May. 17, 2005
6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process Apr. 19, 2005
6872249 Synthesis of colloidal nanocrystals Mar. 29, 2005
6812483 Optical semiconductor element utilizing optical transition between ZnO heterostructure sub-bands Nov. 2, 2004
6791257 Photoelectric conversion functional element and production method thereof Sep. 14, 2004
6777720 Semiconductor light-emitting element having first and second epitaxial layer group II-VI semiconductor compounds on a substrate Aug. 17, 2004
6770913 ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit Aug. 3, 2004
6759690 II-VI semiconductor device with BeTe buffer layer Jul. 6, 2004
6693352 Contact structure for group III-V semiconductor devices and method of producing the same Feb. 17, 2004
6674098 ZnO compound semiconductor light emitting element Jan. 6, 2004
6673641 Contact structure for an electric II/VI semiconductor component and a method for the production of the same Jan. 6, 2004
6664570 P-type contact electrode device and light-emitting device Dec. 16, 2003
6639354 Light emitting device, production method thereof, and light emitting apparatus and display unit using the same Oct. 28, 2003
6583450 II-VI semiconductor device with BeTe buffer layer Jun. 24, 2003
6518077 Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys Feb. 11, 2003
6495859 Opto-electronic component made from II-VI semiconductor material Dec. 17, 2002
6456639 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same Sep. 24, 2002
6423983 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys Jul. 23, 2002
6420731 Light emitting diode and manufacturing method thereof Jul. 16, 2002
6414975 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same Jul. 2, 2002
6372536 II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction Apr. 16, 2002
6265734 Opto-electronic component made from II-VI semiconductor material Jul. 24, 2001
6206962 Semiconductor light emitting device and method of manufacturing same Mar. 27, 2001
6178190 II-VI compound semiconductor light emitting device Jan. 23, 2001
6090637 Fabrication of II-VI semiconductor device with BeTe buffer layer Jul. 18, 2000
6087725 Low barrier ohmic contact for semiconductor light emitting device Jul. 11, 2000
6088375 Semiconductor device comprising p-type ZnMgSSe layer Jul. 11, 2000
6078062 II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation Jun. 20, 2000
6069367 Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices May. 30, 2000
6069020 Method of manufacturing semiconductor light-emitting device May. 30, 2000
6031244 Luminescent semiconductor device with antidiffusion layer on active layer surface Feb. 29, 2000
6020601 Semiconductor light-emitting device Feb. 1, 2000
5998809 Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter Dec. 7, 1999
5963573 Light absorbing layer for II-VI semiconductor light emitting devices Oct. 5, 1999
5949093 Semiconductor light emitting device with current blocking region Sep. 7, 1999
5943355 Semiconductor light emitting device Aug. 24, 1999
5909459 Surface-emitting semiconductor light emitting device Jun. 1, 1999

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