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Class Information
Number: 257/E33.018
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Material of active region (epo) > Comprising only group iv element (epo) > Including porous si (epo)
Description: This subclass is indented under subclass E33.015. This subclass is substantially the same in scope as ECLA classification H01L33/00C4B4.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8148234 Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure Apr. 3, 2012
7829913 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method Nov. 9, 2010
7759139 Method for manufacturing silicon device Jul. 20, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7582906 Lighting device and display device provided with the same Sep. 1, 2009
7531423 Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same May. 12, 2009
7468529 Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particles Dec. 23, 2008
7327036 Method for depositing a group III-nitride material on a silicon substrate and device therefor Feb. 5, 2008
7309620 Use of sacrificial layers in the manufacture of high performance systems on tailored substrates Dec. 18, 2007
6943048 Method for manufacturing optoelectronic material Sep. 13, 2005
6869814 Silicon-based ultra-violet LED Mar. 22, 2005
6780649 Photoluminescent semiconductor materials Aug. 24, 2004
6759686 Silicon-based ultra-violet LED Jul. 6, 2004
6630356 Photoluminescent semiconductor materials Oct. 7, 2003
6544870 Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same Apr. 8, 2003
6426274 Method for making thin film semiconductor Jul. 30, 2002
6410436 Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate Jun. 25, 2002
6403984 Amorphous semiconductor photocoupler Jun. 11, 2002
6403391 Semiconductor light emitting device and method for manufacturing the same Jun. 11, 2002
6398943 Process for producing a porous layer by an electrochemical etching process Jun. 4, 2002
6380550 Electroluminescent device comprising porous silicon Apr. 30, 2002
6326280 Thin film semiconductor and method for making thin film semiconductor Dec. 4, 2001
6265823 Light emitter Jul. 24, 2001
6225647 Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same May. 1, 2001
6215244 Stacked organic light emitting device with specific electrode arrangement Apr. 10, 2001
6194239 Method for making thin film semiconductor Feb. 27, 2001
6194245 Method for making thin film semiconductor Feb. 27, 2001
6147359 Method of making silicon quantum wires Nov. 14, 2000
6106613 Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate Aug. 22, 2000
6103540 Laterally disposed nanostructures of silicon on an insulating substrate Aug. 15, 2000
6093941 Photonic silicon on a transparent substrate Jul. 25, 2000
6056868 Rare earth doping of porous silicon May. 2, 2000
6037612 Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon Mar. 14, 2000
6017811 Method of making improved electrical contact to porous silicon Jan. 25, 2000
6017773 Stabilizing process for porous silicon and resulting light emitting device Jan. 25, 2000
5970361 Process for producing semiconductor device having porous regions Oct. 19, 1999
5962863 Laterally disposed nanostructures of silicon on an insulating substrate Oct. 5, 1999
5935410 Process and device for the lighting-supported structuring of porous silicon Aug. 10, 1999
5914183 Porous semiconductor material Jun. 22, 1999
5908303 Manufacturing method of light-emitting diode Jun. 1, 1999
5858559 Method for altering the luminescence of a semiconductor Jan. 12, 1999
5834378 Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on same Nov. 10, 1998
5831329 Layered system with an electrically activatable layer Nov. 3, 1998
5828118 System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector Oct. 27, 1998
5765680 Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications Jun. 16, 1998
5726464 Light emitting device using porous semi-conductor material Mar. 10, 1998
5705047 Method for manufacturing porous blue light emitting diode Jan. 6, 1998
5696629 Optical component comprising layers of porous silicon Dec. 9, 1997
5695617 Silicon nanoparticles Dec. 9, 1997
5690807 Method for producing semiconductor particles Nov. 25, 1997

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