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Class Information
Number: 257/E33.009
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Shape or structure (e.g., shape of epitaxial layer) (epo) > Multiple quantum well structure (epo) > Including, apart from doping materials or other only impurities, group iv element (e.g., si-sige superlattice) (epo)
Description: This subclass is indented under subclass E33.008. This subclass is substantially the same in scope as ECLA classification H01L33/00C3D2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8704240 Light emitting devices having current reducing structures Apr. 22, 2014
8692228 Semiconductor light emitting device and wafer Apr. 8, 2014
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide Feb. 4, 2014
8492746 Light emitting diode (LED) dice having wavelength conversion layers Jul. 23, 2013
8455858 Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage Jun. 4, 2013
8324611 Semiconductor light emitting device and wafer Dec. 4, 2012
8227791 Strain balanced light emitting devices Jul. 24, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8039830 Semiconductor light emitting device and wafer Oct. 18, 2011
8035098 Transistor with asymmetric silicon germanium source region Oct. 11, 2011
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
7968879 Thin film transistor and display device including the same Jun. 28, 2011
7884354 Germanium on insulator (GOI) semiconductor substrates Feb. 8, 2011
7786469 Thermal sensor with a silicon/germanium superlattice structure Aug. 31, 2010
7700936 Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice Apr. 20, 2010
7612364 MOS devices with source/drain regions having stressed regions and non-stressed regions Nov. 3, 2009
7598513 Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn Oct. 6, 2009
7569848 Mobility enhanced CMOS devices Aug. 4, 2009
7528403 Hybrid silicon-on-insulator waveguide devices May. 5, 2009
7518188 P-channel MOS transistor and fabrication process thereof Apr. 14, 2009
7442599 Silicon/germanium superlattice thermal sensor Oct. 28, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7304328 Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion Dec. 4, 2007
7233018 High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same Jun. 19, 2007
7227174 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction Jun. 5, 2007
7161168 Superlattice nanopatterning of wires and complex patterns Jan. 9, 2007
6596555 Forming of quantum dots Jul. 22, 2003
6403975 Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates Jun. 11, 2002
6008506 SOI optical semiconductor device Dec. 28, 1999
5994154 Method of fabricating an optical semiconductor device Nov. 30, 1999
5917195 Phonon resonator and method for its production Jun. 29, 1999
5793060 SOI Optical semiconductor device Aug. 11, 1998
5757024 Buried porous silicon-germanium layers in monocrystalline silicon lattices May. 26, 1998
5685946 Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices Nov. 11, 1997
5630905 Method of fabricating quantum bridges by selective etching of superlattice structures May. 20, 1997
5548128 Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates Aug. 20, 1996
5539214 Quantum bridges fabricated by selective etching of superlattice structures Jul. 23, 1996











 
 
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