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Class Information
Number: 257/E33.005
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof > Device characterized by semiconductor body (epo) > Shape or structure (e.g., shape of epitaxial layer) (epo)
Description: This subclass is indented under subclass E33.002. This subclass is substantially the same in scope as ECLA classification H01L33/00C3.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7601986 |
Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
Oct. 13, 2009 |
| 7595539 |
Method for release of surface micromachined structures in an epitaxial reactor |
Sep. 29, 2009 |
| 7592686 |
Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same |
Sep. 22, 2009 |
| 7575942 |
Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal |
Aug. 18, 2009 |
| 7566910 |
GaN-based compound semiconductor light emitting device |
Jul. 28, 2009 |
| 7560294 |
Light emitting element and method of making same |
Jul. 14, 2009 |
| 7541250 |
Method for forming a self-aligned twin well region with simplified processing |
Jun. 2, 2009 |
| 7528403 |
Hybrid silicon-on-insulator waveguide devices |
May. 5, 2009 |
| 7521721 |
Surface-emitting type device and its manufacturing method |
Apr. 21, 2009 |
| 7511308 |
Light emitting device and method for fabricating the same |
Mar. 31, 2009 |
| 7508010 |
Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode |
Mar. 24, 2009 |
| 7485902 |
Nitride-based semiconductor light-emitting device |
Feb. 3, 2009 |
| 7482634 |
Monolithic array for solid state ultraviolet light emitters |
Jan. 27, 2009 |
| 7462877 |
Nitride-based light emitting device, and method of manufacturing the same |
Dec. 9, 2008 |
| 7456491 |
Large area electron emission system for application in mask-based lithography, maskless lithography II and microscopy |
Nov. 25, 2008 |
| 7442965 |
Photonic crystal light emitting device |
Oct. 28, 2008 |
| 7394112 |
Heterostructure with rear-face donor doping |
Jul. 1, 2008 |
| 7387833 |
Luminescent materials consisting of nanocrystals with core/shell structure and method for preparing same |
Jun. 17, 2008 |
| 7372082 |
Submount substrate for mounting light emitting device and method of fabricating the same |
May. 13, 2008 |
| 7358126 |
Dual damascene structure and methods of forming the same |
Apr. 15, 2008 |
| 7355210 |
High-efficiency light-emitting element |
Apr. 8, 2008 |
| 7329907 |
Phosphor-converted LED devices having improved light distribution uniformity |
Feb. 12, 2008 |
| 7315048 |
Method and apparatus for mixing light emitted by a plurality of solid-state light emitters |
Jan. 1, 2008 |
| 7294562 |
Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same |
Nov. 13, 2007 |
| 7233041 |
Large-area nanoenabled macroelectronic substrates and uses therefor |
Jun. 19, 2007 |
| 7233028 |
Gallium nitride material devices and methods of forming the same |
Jun. 19, 2007 |
| 7075120 |
Light-emitting diode and its manufacturing method |
Jul. 11, 2006 |
| 7067846 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
Jun. 27, 2006 |
| 7067838 |
Gallium-nitride-based light-emitting apparatus |
Jun. 27, 2006 |
| 7060243 |
Tellurium-containing nanocrystalline materials |
Jun. 13, 2006 |
| 7058105 |
Semiconductor optoelectronic device |
Jun. 6, 2006 |
| 7049641 |
Use of deep-level transitions in semiconductor devices |
May. 23, 2006 |
| 7042023 |
Semiconductor light emitting device and method for producing the same |
May. 9, 2006 |
| 7042013 |
Radiation-emitting semiconductor component |
May. 9, 2006 |
| 7041519 |
Method for producing p-type group III nitride compound semiconductor |
May. 9, 2006 |
| 7034330 |
Group-III nitride semiconductor device, production method thereof and light-emitting diode |
Apr. 25, 2006 |
| 7034342 |
Semiconductor light emitting device |
Apr. 25, 2006 |
| 7029939 |
P-type semiconductor manufacturing method and semiconductor device |
Apr. 18, 2006 |
| 7026653 |
Semiconductor light emitting devices including current spreading layers |
Apr. 11, 2006 |
| 7015139 |
Two-dimensionally arrayed quantum device |
Mar. 21, 2006 |
| 7015511 |
Gallium nitride-based light emitting device and method for manufacturing the same |
Mar. 21, 2006 |
| 7015498 |
Quantum optical semiconductor device |
Mar. 21, 2006 |
| 7012283 |
Nitride semiconductor light emitting element and optical device containing it |
Mar. 14, 2006 |
| 7005681 |
Radiation-emitting semiconductor component and method for making same |
Feb. 28, 2006 |
| 7002182 |
Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
Feb. 21, 2006 |
| 6995403 |
Light emitting device |
Feb. 7, 2006 |
| 6995401 |
Light emitting device and method of fabricating the same |
Feb. 7, 2006 |
| 6992317 |
Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
Jan. 31, 2006 |
| 6992320 |
Semiconductor optical device with quantum dots having internal tensile or compressive strain |
Jan. 31, 2006 |
| 6987281 |
Group III nitride contact structures for light emitting devices |
Jan. 17, 2006 |
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