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Class Information
Number: 257/E31.114
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Detail of nonsemiconductor component of radiation-sensitive semiconductor device (epo) > Circuit arrangement of general character for device (epo) > For device having potential or surface barrier (epo)
Description: This subclass is indented under subclass E31.113. This subclass is substantially the same in scope as ECLA classification H01L31/02H2.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.116 Device working in avalanche mode (epo) 32
257/E31.115 Position-sensitive and lateral-effect photodetector (e.g., quadrant photodiode) (epo) 113


Patents under this class:

Patent Number Title Of Patent Date Issued
8502389 CMOS image sensor and method for forming the same Aug. 6, 2013
8338904 Semiconductor device and method for manufacturing the same Dec. 25, 2012
7936039 Backside illuminated CMOS image sensor with photo gate pixel May. 3, 2011
7863077 Image sensor and method for manufacturing the same Jan. 4, 2011
7368750 Semiconductor light-receiving device May. 6, 2008
6757627 Photo-detecting apparatus Jun. 29, 2004
6583456 Image sensor with light receiving elements of differing areas and image reader both having semiconductor device Jun. 24, 2003
6511858 Method for fabricating semiconductor device Jan. 28, 2003
6407418 Semiconductor device, method of manufacturing the same, image sensor apparatus having the same and image reader having the same Jun. 18, 2002
5861621 Photosensor circuit having an initial setting unit Jan. 19, 1999
5130776 Ultraviolet-light photodiode Jul. 14, 1992
5091641 High-frequency optoelectric front-end Feb. 25, 1992
4952796 Light detection circuit having a junction reverse-biased by a current generator Aug. 28, 1990
4873202 Solid state relay and method of manufacturing the same Oct. 10, 1989
4804866 Solid state relay Feb. 14, 1989
4800262 Tri-state optical device with quantum well absorption Jan. 24, 1989
4791468 Radiation-sensitive semiconductor device Dec. 13, 1988
4789777 Photelectric amplifier having plural actuable feedback paths Dec. 6, 1988
4544843 Radiation detector with built-in test capability Oct. 1, 1985
4385309 Semiconductor device for optical dosage measurement May. 24, 1983
4348110 Charging current integrating type photodetectors Sep. 7, 1982
4318115 Dual junction photoelectric semiconductor device Mar. 2, 1982
4309604 Apparatus for sensing the wavelength and intensity of light Jan. 5, 1982
4216379 Low voltage bias circuit for a photo-diode Aug. 5, 1980
4173723 Photo detector input circuit Nov. 6, 1979
4110608 Two-terminal photodetectors with inherent AC amplification properties Aug. 29, 1978
4103157 High speed photodetector and system Jul. 25, 1978
4097732 Automatic gain control for photosensing devices Jun. 27, 1978
4097731 Automatic gain control for photosensing devices Jun. 27, 1978
3976873 Tunable electroabsorptive detector Aug. 24, 1976











 
 
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