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Class Information
Number: 257/E31.09
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to very short wavelength (e.g., x-ray, gamma-ray, or corpuscular radiation) (epo) > With surface barrier or shallow pn junction (e.g., surface barrier alpha-particle detector) (epo) > With shallow pn junction (epo)
Description: This subclass is indented under subclass E31.089. This subclass is substantially the same in scope as ECLA classification H01L31/118B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8704243 Light emitting device and manufacturing method thereof Apr. 22, 2014
8669588 Epitaxially-grown position sensitive detector Mar. 11, 2014
8309976 Light emitting device and manufacturing method thereof Nov. 13, 2012
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7038213 Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices May. 2, 2006
7030551 Area sensor and display apparatus provided with an area sensor Apr. 18, 2006
6759660 Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices Jul. 6, 2004
6184562 Strip detector Feb. 6, 2001
5349192 Solid state detector for polarized x-rays Sep. 20, 1994
5187380 Low capacitance X-ray radiation detector Feb. 16, 1993
5051801 Position-sensitive radiation detector Sep. 24, 1991
5008908 Diffraction device which detects the Bragg condition Apr. 16, 1991
4960436 Radiation or light detecting semiconductor element containing heavily doped p-type stopper region Oct. 2, 1990
4896200 Novel semiconductor-based radiation detector Jan. 23, 1990
4879466 Semiconductor radiation detector Nov. 7, 1989
4835587 Semiconductor device for detecting radiation May. 30, 1989
4804848 Ionizing radiation detector for detecting the direction and intensity of the radiation Feb. 14, 1989
4692782 Semiconductor radioactive ray detector Sep. 8, 1987
4689649 Semiconductor radiation detector Aug. 25, 1987
4638165 Detector apparatus and method for computer tomography and radiography Jan. 20, 1987
4442592 Passivated semiconductor pn junction of high electric strength and process for the production thereof Apr. 17, 1984











 
 
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