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Class Information
Number: 257/E31.088
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to very short wavelength (e.g., x-ray, gamma-ray, or corpuscular radiation) (epo) > Bulk-effect radiation detector (e.g., ge-li compensated pin gamma-ray detector) (epo) > Li-compensated pin gamma-ray detector (epo)
Description: This subclass is indented under subclass E31.087. This subclass is substantially the same in scope as ECLA classification H01L31/117B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8592881 Organic light emitting element and method of manufacturing the same Nov. 26, 2013
7732886 Pin photodiode structure Jun. 8, 2010
5075555 Peltier cooled lithium-drifted silicon x-ray spectrometer Dec. 24, 1991
4350993 Heterojunction and Schottky barrier EBS targets Sep. 21, 1982
4157559 Coaxial nuclear radiation detector with deep junction and radial field gradient Jun. 5, 1979
4060432 Method for manufacturing nuclear radiation detector with deep diffused junction Nov. 29, 1977











 
 
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