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Class Information
Number: 257/E31.081
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Field-effect type (e.g., junction field-effect phototransistor) (epo) > With pn heterojunction gate (epo) > Charge-coupled device (ccd) (epo)
Description: This subclass is indented under subclass E31.08. This subclass is substantially the same in scope as ECLA classification H01L31/112D2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8569807 Backside illuminated image sensor having capacitor on pixel region Oct. 29, 2013
8383443 Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing Feb. 26, 2013
7838344 Method for manufacturing a charge coupled device Nov. 23, 2010
7645646 Manufacture of electronic devices comprising thin-film circuit elements Jan. 12, 2010
7585694 Manufacturing method of solid-state imaging device Sep. 8, 2009
7579637 Image sensing device for reducing pixel-to-pixel crosstalk Aug. 25, 2009
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
7508017 Solid-state image sensor using junction gate type field-effect transistor as pixel Mar. 24, 2009
7453130 Semiconductor apparatus and method for fabricating the same Nov. 18, 2008
7102185 Lightshield architecture for interline transfer image sensors Sep. 5, 2006











 
 
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