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Class Information
Number: 257/E31.08
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Field-effect type (e.g., junction field-effect phototransistor) (epo) > With pn heterojunction gate (epo)
Description: This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112D.

Sub-classes under this class:

Class Number Class Name Patents
257/E31.081 Charge-coupled device (ccd) (epo) 10
257/E31.082 Field-effect phototransistor (epo) 35

Patents under this class:

Patent Number Title Of Patent Date Issued
8383443 Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing Feb. 26, 2013
8048705 Method and structure for a CMOS image sensor using a triple gate process Nov. 1, 2011
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same Nov. 7, 2006
4734750 High electron mobility heterojunction semiconductor devices Mar. 29, 1988

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