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Class Information
Number: 257/E31.077
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Field-effect type (e.g., junction field-effect phototransistor) (epo) > With pn homojunction gate (epo)
Description: This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112C.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.078 Charge-coupled device (ccd) (epo) 16
257/E31.079 Field-effect phototransistor (epo) 69


Patents under this class:

Patent Number Title Of Patent Date Issued
7902623 Solid-state imaging device Mar. 8, 2011
7902622 Solid-state imaging device Mar. 8, 2011
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
4641167 Semiconductor optoelectro transducer Feb. 3, 1987
4608587 Semiconductor optoelectro transducer Aug. 26, 1986
4326210 Light-responsive field effect mode semiconductor devices Apr. 20, 1982











 
 
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