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Class Information
Number: 257/E31.076
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Field-effect type (e.g., junction field-effect phototransistor) (epo) > With schottky gate (epo) > Photo mesfet (epo)
Description: This subclass is indented under subclass E31.074. This subclass is substantially the same in scope as ECLA classification H01L31/112B3.

Patents under this class:

Patent Number Title Of Patent Date Issued
8546901 High sensitivity image sensors including a single electron field effect transistor and methods of operating the same Oct. 1, 2013
8232586 Silicon photon detector Jul. 31, 2012
8053271 Device and method for managing radiation Nov. 8, 2011
8048705 Method and structure for a CMOS image sensor using a triple gate process Nov. 1, 2011
8039917 Photodiode and photo IC using same Oct. 18, 2011
7816755 Photoelectric conversion device with isolation arrangement that reduces pixel space without reducing resolution or sensitivity Oct. 19, 2010
7638817 Device and method for managing radiation Dec. 29, 2009
7605013 Photo-detector and related methods Oct. 20, 2009
7452744 Method of manufacturing solid image pickup apparatus Nov. 18, 2008
7095060 Unit for driving light-emitting device Aug. 22, 2006
6846731 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films Jan. 25, 2005
5811322 Method of making a broadband backside illuminated MESFET with collecting microlens Sep. 22, 1998
5804847 Backside illuminated FET optical receiver with gallium arsenide species Sep. 8, 1998
5739561 Light sensitive semiconductor device and method of operation Apr. 14, 1998
5686756 Compound field effect transistor having a conductive layer comprising a III-V group compound Nov. 11, 1997
5633512 Semiconductor device for varying the mobility of electrons by light irradiation May. 27, 1997
5608255 FET optical receiver using backside illumination, indium materials species Mar. 4, 1997
5567973 Optical field-effect transistor with improved sensitivity Oct. 22, 1996
5536954 Optically coupled MESFET Jul. 16, 1996
5532173 FET optical receiver using backside illumination, indium materials species Jul. 2, 1996
5453630 Variable gain optical detector Sep. 26, 1995
5329137 Integrated total internal reflection optical switch utilizing charge storage in a quantum well Jul. 12, 1994
5298739 Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same Mar. 29, 1994
5285514 Waveguide type photodetector and a method of fabricating the same Feb. 8, 1994
5196717 Field effect transistor type photo-detector Mar. 23, 1993
4970386 Vertical FET high speed optical sensor Nov. 13, 1990
4872744 Single quantum well optical modulator Oct. 10, 1989
4821093 Dual channel high electron mobility field effect transistor Apr. 11, 1989
4739385 Modulation-doped photodetector Apr. 19, 1988
4618024 Moving seismic source system for use in water-covered areas Oct. 21, 1986
4416053 Method of fabricating gallium arsenide burris FET structure for optical detection Nov. 22, 1983
4346394 Gallium arsenide burrus FET structure for optical detection Aug. 24, 1982

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