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Class Information
Number: 257/E31.074
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Field-effect type (e.g., junction field-effect phototransistor) (epo) > With schottky gate (epo)
Description: This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112B.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.075 Charge-coupled device (ccd) (epo) 16
257/E31.076 Photo mesfet (epo) 32


Patents under this class:

Patent Number Title Of Patent Date Issued
8546901 High sensitivity image sensors including a single electron field effect transistor and methods of operating the same Oct. 1, 2013
8125008 Schottky device and process of making the same comprising a geometry gap Feb. 28, 2012
7973379 Photovoltaic ultraviolet sensor Jul. 5, 2011
7928480 Semiconductor device Apr. 19, 2011
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7141464 Method of fabricating T-type gate Nov. 28, 2006
5796155 Schottky barrier infrared detector array with increased effective fill factor Aug. 18, 1998
5631479 Semiconductor device with laminated refractory metal schottky barrier gate electrode May. 20, 1997











 
 
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