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Class Information
Number: 257/E31.072
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by at least three potential barriers (epo) > Photothyristor (epo) > Static induction type (i.e., sit device) (epo)
Description: This subclass is indented under subclass E31.071. This subclass is substantially the same in scope as ECLA classification H01L31/111B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7385231 Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element Jun. 10, 2008
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same Nov. 7, 2006
5258670 Light triggered & quenched static induction thyristor circuit Nov. 2, 1993
4975755 Optically controllable static induction thyristor device Dec. 4, 1990
4914043 Method of making an integrated light-triggered and light-quenched static induction thyristor Apr. 3, 1990
4866500 Integrated light-triggered and light-quenched static induction thyristor and making method thereof Sep. 12, 1989
4816891 Optically controllable static induction thyristor device Mar. 28, 1989











 
 
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